Datasheet RSJ550N10 Datasheet (ROHM)

Data Sheet

4V Drive Nch MOSFET

RSJ550N10

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Low on-resistance.

2) High Power Package.

9.0

13.1

1.0

3.0

3) 4V drive.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL Basic ordering unit (pieces) 1000

RSJ550N10 

(1) Gate (2) Drain (3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*3

*1

*3

*1

*2

100 V

20 V

55 A

110 A

55 A

110 A

100 W

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 PW10s, Duty cycle1%

=25°C

*2 T

C

*3 Please use within the range of SOA.

1.24

2.54

5.08

(1) (2) (3)

1 ESD PROTECTION DIODE 2 BODY DIODE

0.4

0.78

2.7

∗1

∗2

(1) (2) (3)

1.2

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 1.25 C / W

* TC=25°C

Symbol Limits Unit

*

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2011.06 - Rev.A

Data Sheet

RSJ550N10

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1 - 2.5 V VDS=10V, ID=1mA

- 12 16.8 I

*

m

- 13.5 18.9 I

*

l30 - - SVDS=10V, ID=27.5A

- 6150 - pF VDS=25V

- 460 - pF VGS=0V

- 320 - pF f=1MHz

- 32 - ns VDD 50V, ID=27.5A

*

- 105 - ns VGS=10V

*

- 375 - ns RL=1.82

*

- 360 - ns RG=10

*

- 143 - nC VDD 50V, ID=27.5A

*

- 16 - nC VGS=10V

*

-34-nC

*

=27.5A, VGS=10V

D

=27.5A, VGS=4V

D

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.5 V Is=55A, VGS=0V

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2011.06 - Rev.A

Data Sheet

RSJ550N10

Electrical characteristic curves (Ta=25C)

0

10

20

30

40

50

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

T

a

=25

°C

pulsed

0

10

20

30

40

50

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

Ta=25°C pulsed

1

10

100

0.01 0.1 1 10 100 1000

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V

VGS=10V

Ta=25°C pulsed

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

T

a

=125°C

T

a

=75°C

T

a

=25°C

T

a

=-25°C

1

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.6 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

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2011.06 - Rev.A

Data Sheet

RSJ550N10

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : I

s

[A]

Source-Drain Voltage : VSD [V]

Fig.7 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

10

20

30

40

50

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mW]

Gate-Source Voltage : VGS [V]

Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

T

a

=25

°C

pulsed

ID=50A

ID=27.5A

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.9 Switching Characteristics

t

d(on)

tr t

d(off)

t

f

VDD≒50V V

GS

=10V

R

G

=10W

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 10 20 30 40 50 60 70 80 90 100110120130140150

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.10 Dynamic Input Characteristics

T

a

=25°C

V

DD

=50V

I

D

=27.5A

Pulsed

10

100

1000

10000

100000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.11 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz VGS=0V

C

iss Coss

C

rss

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Mounted on epoxy board. (25mm

× 27mm ×

0.8mm)

Rth

(ch-a)

=71.4°C/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

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2011.06 - Rev.A

Data Sheet

RSJ550N10

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.13 Maximum Safe Operating Area

T

a

=25°C

Single Pulse Mounted on epoxy board. (25mm × 27mm × 0.8mm)

Operation in this area is limited by R

DS(on)

(VGS = 10V)

PW = 1ms

PW = 10ms

PW = 1s

PW = 300ms

5/6

2011.06 - Rev.A

Data Sheet

RSJ550N10

S

%

V V

V

S

 Measurement circuits

V

GS

R

G

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-1 Switching Time Measurement Circuit

V

I

G(Const.)

GS

D.U.T.

D

I

V

D

R

L

V

DD

Fig.2-1 Gate Charge Measurement Circuit

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

6/6

2011.06 - Rev.A

Notes

Notice

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R1120A

Datasheet RSJ550N10 Datasheet (ROHM)

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