ROHM RSJ450N04 Technical data

Data Sheet

10V Drive Nch MOSFET

RSJ450N04

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Low on-resistance.

2) High current

9.0

13.1

1.0

3.0

3) High power Package

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 1000

RSJ450N04 ○

(1) Gate
(2) Drain
(3) Source

Absolute maximum ratings (T

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

= 25°C)

a

Symbol Limits Unit

DSS

GSS

D

*1

DP

S

*1

SP

*2

D

40 V

20 V

45 A

90 A

40 A

90 A

50 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55to150 C

*1 Pw10s, Duty cycle1%

*2 T

=25C

c

1.24

2.54

5.08

(1) (2) (3)

(1) (2) (3)

1 ESD PROTECTION DIODE
2 BODY DIODE

0.4

0.78

2.7

∗1

∗2

1.2

 Thermal resistance

Parameter

Channel to Case R

* Tc=25C

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Symbol Limits Unit

*

th (ch-c)

2.5 C / W

1/5

2011.09 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RSJ450N04

Electrical characteristics (Ta = 25°C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

40 - - V ID=1mA, VGS=0V

--1AVDS=40V, VGS=0V

1.2 - 3.0 V VDS=10V, ID=1mA

*

-

*

l10 - - SID=25A, VDS=10V

9.5 13.5

- 2400 - pF VDS=25V

- 380 - pF VGS=0V

- 170 - pF f=1MHz

- 25 - ns ID=25A, VDD 25V

*

- 225 - ns VGS=10V

*

*

- 90 - ns RL=1.0

*

- 390 - ns RG=10

*

- 43 - nC VDD 25V

*

- 12 - nC ID=45A,

-6-nCV

*

ID=25A, VGS=10V

m

=10V

GS

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

*

SD

- - 1.2 V Is=25A, VGS=0V

2/5

2011.09 - Rev.A