ROHM RSJ300N10 Technical data

Data Sheet

4V Drive Nch MOSFET

RSJ300N10

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

9.0

13.1

1.0

3.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 1000

RSJ300N10 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

*1

*2

*1

*2

*3

100 V

20 V

30 A

60 A

30 A

60 A

50 W

(1) Gate
(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Limited only by maximum temperature allowed.

*2 Pw≦10s, Duty cycle≦1%

=25℃

*3 T

c

1.24

2.54

5.08

(1) (2) (3)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

0.4

0.78

2.7

∗1

(1) (2) (3)

1.2

∗2

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 2.5 C / W

*Mounted on a ceramic board.

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

*

1/6

2011.08 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RSJ300N10

 Electrical characteristics (Ta = 25 C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3352 I

Static drain-source on-state
resistance

R

DS (on)

*

-3658 I

m

-3859 I

iss

oss

rss

d(on)

d(off)

gd

*

- 2200 - pF VDS=25V

- 190 - pF VGS=0V

- 120 - pF f=1MHz

- 20 - ns ID=15A, VDD 50V

*

- 65 - ns VGS=10V

*

r

- 130 - ns RL=3.3

*

- 180 - ns RG=10

*

f

- 50 - nC ID=30A, VDD 50V

*

g

-6-nCV

*

gs

-15-nC

*

Forward transfer admittance l Yfs l15 - - SID=15A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=15A, VGS=10V

D

=15A, VGS=4.5V

D

=15A, VGS=4.0V

D

=10V

GS

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=30A, VGS=0V

Conditions

2/6

2011.08 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RSJ300N10

Electrical characteristic curves (Ta=25C)

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V
VGS= 4.5V
VGS= 4.0V

VGS= 3.0V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

5

10

15

20

25

30

0 2 4 6 8 10

VGS= 3.0V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.5V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

0.01 0.1 1 10 100

V

GS

= 4.0V

V

GS

= 4.5V

VGS= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10 100

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10 100

VGS= 4.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

3/6

2011.08 - Rev.A