ROHM RSJ300N10 Technical data

Data Sheet

4V Drive Nch MOSFET

RSJ300N10

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

LPTS

10.1

4.5

1.3

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

9.0

13.1

1.0

3.0

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 1000

RSJ300N10 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

*1

*2

*1

*2

*3

100 V

20 V

30 A

60 A

30 A

60 A

50 W

(1) Gate
(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Limited only by maximum temperature allowed.

*2 Pw≦10s, Duty cycle≦1%

=25℃

*3 T

c

1.24

2.54

5.08

(1) (2) (3)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

0.4

0.78

2.7

∗1

(1) (2) (3)

1.2

∗2

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 2.5 C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

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Data Sheet

RSJ300N10

 Electrical characteristics (Ta = 25 C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3352 I

Static drain-source on-state
resistance

R

DS (on)

*

-3658 I

m

-3859 I

iss

oss

rss

d(on)

d(off)

gd

*

- 2200 - pF VDS=25V

- 190 - pF VGS=0V

- 120 - pF f=1MHz

- 20 - ns ID=15A, VDD 50V

*

- 65 - ns VGS=10V

*

r

- 130 - ns RL=3.3

*

- 180 - ns RG=10

*

f

- 50 - nC ID=30A, VDD 50V

*

g

-6-nCV

*

gs

-15-nC

*

Forward transfer admittance l Yfs l15 - - SID=15A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=15A, VGS=10V

D

=15A, VGS=4.5V

D

=15A, VGS=4.0V

D

=10V

GS

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=30A, VGS=0V

Conditions

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Data Sheet

RSJ300N10

Electrical characteristic curves (Ta=25C)

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

V

GS

= 10V
VGS= 4.5V
VGS= 4.0V

VGS= 3.0V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

5

10

15

20

25

30

0 2 4 6 8 10

VGS= 3.0V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.5V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

10

100

0.01 0.1 1 10 100

V

GS

= 4.0V

V

GS

= 4.5V

VGS= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10 100

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

10

100

1000

0.1 1 10 100

VGS= 4.5V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

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Data Sheet

RSJ300N10

10

100

1000

0.1 1 10 100

VGS= 4.0V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

0.1

1

10

100

0.01 0.1 1 10 100

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.8 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

10

100

0 0.5 1 1.5

V

GS

=0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

20

40

60

80

100

0 2 4 6 8 10

ID= 15.0A

ID= 30.0A

Ta=25°C
Pulsed

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

ON

)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

10000

0.01 0.1 1 10 100

t

f

t

d(on)

t

d(off)

Ta=25°C
V

DD

=50V

V

GS

=10V

R

G

=10Ω

Pulsed

t

r

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

0

2

4

6

8

10

0 10 20 30 40 50

T

a

=25°C

V

DD

= 50V

I

D

= 30A

R

G

=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

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Data Sheet

RSJ300N10

10

100

1000

10000

0.01 0.1 1 10 100 1000

C

iss

C

rss

T

a

=25°C

f=1MHz
VGS=0V

C

oss

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

1000

0.1 1 10 100 1000

PW = 10ms

T

C

=25°C

Single Pulse

DC operation

Operation in this area is limited by R

DS(ON)

(VGS=10V)

PW=100us

PW=1ms

Fig.14 Maximum Safe Operating Aera

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

(A)

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-

a)

Rth(ch-a) = 65.8 °C/W

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

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Data Sheet

RSJ300N10

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

I

V

D

R

L

V

DD

D

VD

RL

VDD

Pulse width

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

off

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

t

f

6/6

2011.08 - Rev.A

Notes

Notice

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