ROHM RSH070P05 Technical data

4V Drive Pch MOSFET

RSH070P05

Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET

Features

1) Built-in G-S Protection Diode.

2) Small and Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter, Inverter

Packaging specifications Inner circuit

Type

RSH070P05

Package
Code
Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C)

Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Chanel temperature
Range of Storage temperature

*1 PW10

*2 Mounted on a ceramic board

Parameter

ｓ、

Duty cycle1



Continuous
Pulsed
Continuous
Pulsed



Symbol Limits Unit

V

DSS

V

GSS

I

D

I

DP *1

I

S

I

SP *1

P

D *2

T

ch

T

stg

-45 V

±20 V

±7.0 A

±28 A

-1.6 A

-28 A
2W

150

-55 to +150

o

o

C
C

Thermal resistance

Chanel to ambient

* Mounted on a ceramic board

Parameter

Symbol Limits Unit
R

th(ch-a) *

62.5

o

C/W

SOP8

(8) (7) (6) (5)

∗2

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

Each lead has same dimensions

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain

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2009.12 - Rev.A

Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

− ±10 μAVGS=±20V, VDS=0V

−45 −−VI

I

DSS

GS (th)

−−−1 μAV

−1.0 −−2.5 V V

− 19 27 I

∗

DS (on)

− 25 35 mΩ

− 28 39 I

∗

10.0 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 4100 − pF V

iss

− 510

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

330

31

−

35

−

135

−

50

−

34.0

−

9.5

−

12

−−nC

47.6 nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −7A, VGS=0VForward voltage

− pF V

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

Unit

mΩ

mΩ

Unit

D

D

I

D
D

V

ID= −3.5A
V
R
R

V
I

D

R

Conditions

= −1mA, VGS=0V

= −45V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −7A, VGS= −10V
= −7A, VGS= −4.5V
= −7A, VGS= −4.0V

= −10V, ID= −7A

DS

= −10V

DS

=0V

GS

DD

−25V

GS

= −10V

L

=−7Ω

G

=10Ω

−25V

DD

VGS= −5V

= −7A

L

=3.5Ω

R

G

=10Ω

Conditions

Data Sheet RSH070P05

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A