ROHM RSH070N05 Technical data

voltage are exceeded.

4V Drive Nch MOSFET

RSH070N05

Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET

Features

1) Built-in G-S Protection Diode.

2) Small Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter, Inverter

Packaging specifications Inner circuit

Type

RSH070N05

Package
Code
Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C)

Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Chanel temperature
Range of Storage temperature

*1 PW10ｓ, Duty cycle1

*2 Mounted on a ceramic boar d

Parameter

Continuous
Pulsed
Continuous
Pulsed



Symbol Limits Unit

V

DSS

V

GSS

I

D

I

DP

I

S

I

SP

P

D

T

ch

T

stg

45 V
20 V

±7.0 A

*1

±28 A

1.6 A

*1

28 A

*2

2W

150

-55 to +150

o

C

o

C

Thermal resistance

Chanel to ambient

* Mounted on a ceramic board

Parameter

Symbol Limits Unit

R

th(ch-a)

*

62.5

o

C/W

SOP8

Each lead has same dimensions

(8) (7) (6) (5)

∗

2

∗

1

(1) (2) (3)

∗1 ESD Protection Diode.
∗2 Body

Diode.

∗

A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed

(4)

(8) (7) (6) (5)

(1) (2) (3) (4)

(1)

Source

(2)

Source

(3)

Source

(4)

Gate

(5)

Drain

(6)

Drain

(7)

Drain

(8)

Drain

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2009.12 - Rev.A

Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

t
Rise time
Turn-off delay time

t
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Forward voltage

* pulsed

Parameter Condition

Min.−Typ. Max.

I

GSS

− 10 μAVGS=20V, VDS=0V

45 −−VID= 1mA, VGS=0V

I

DSS

GS (th)

−−1 μAV

1.0 − 2.5 V V

− 18 25 I

∗

DS (on)

− 23 32 mΩ

− 25 35 I

∗

6.0 −−SV

Y

fs

C

C
C

d (on)

d (off)

Q

Q

Q

− 1000 − pF V

iss

− 230

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

125

16

−

27

−

57

−

21

−

12.0

−

3.0

−

4.6

−−nC

− pF V

− pF f=1MHz

− ns

− ns

− ns

− ns

16.8 nC

− nC

Symbol Min. Typ. Max. Unit

*

V

SD

－－

Unit

mΩ

mΩ

Conditions

= 45V, VGS=0V

DS

= 10V, ID= 1mA

DS

=7A, VGS= 10V

D

= 7A, VGS= 4.5V

I

D

= 7A, VGS= 4.0V

D

= 10V, ID= 7A

DS

= 10V

DS

=0V

GS

V

DD

25V

ID= 3.5A

GS

= 10V

V

L

=7.1Ω

R

G

=10Ω

R

25V

V

DD

= 7A

I

D

L

R

V

=3.6Ω RG=10Ω

1.2 V

GS

= 5V

I

=1.6A/VGS=0V

S

Data Sheet RSH070N05

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2009.12 - Rev.A

Electrical characteristic curves

10

VDS=10V

pulsed

Ta= 125oC

[A]

D

1

0.1

Drain C urrent : I

o

C

75

o

C

25

o

C

-25

0.01

1.0 1.5 2.0 2.5 3.0 3.5

Gate-Source Voltage : VGS [V]

1000

VGS=10V

pulsed

]



[m

100

DS(on)

Ta=1 25oC

75

25

-25

10

Resistance R

Static Drain-Sou rce On-State

1

0.01 0.1 1 10

Drain Current : ID [A]

Data Sheet RSH070N05

1000

VGS=4.5V

o

C

o

C

o

C

Static Drain-Source On-State

pulsed

]



[m

100

DS(on)

10

Resistance R

1

0.01 0.1 1 10

Ta=1 25oC

-25

Drain Current : I

o

C

75

o

C

25

o

C

[A]

D

Fig.1 Typical Transfer Characteristics Fig.3 Static Drain-Source On-State

1000

VGS=4V

pulsed

]



[m

100

DS(on)

10

Resistance R

Static Drain-Sour ce On-State

1

0.01 0.1 1 10

Ta=1 25oC

o

C

75

o

C

25

o

C

-25

Drain Curr ent : I

[A]

D

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)

Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)

100

]

80



[m

60

DS(on)

40

Resistance R

Static Drain-Sour ce On-State

20

ID=3.5A

0

0 5 10 15 20

ID=7.0A

Gate-Source Voltage : V

Ta=25oC
pulsed

[V]

GS

Fig.5 Static Drain-Source
On-State Resistance vs.

Resistance vs. Drain Current (2)

10

VGS=0V

pulsed

Ta= 125oC

1

0.1

Source Current : Is [A]

0.01

o

C

75

o

C

25

o

C

-25

0.0 0.5 1.0 1.5

Source-Drain Voltage : V

[V]

SD

Fig.6 Source-Current vs.
Source-Drain Voltage

Gate-Source Voltage

10000

Ta=2 5oC
f=1MHz
V

=0V

GS

1000

100

Capacitance : C [pF]

10

0.01 0.1 1 10 100
Drain-Source Voltage : V

DS

10000

C

C

C

[V]

1000

iss

100

t

oss

rss

d(off)

Switching Time : t [ns]

10

1

0.01 0.1 1 10

t

f

t

d(on)

t

r

Drain Current : I

Ta=2 5oC
V

=25V

DD

=10V

V

GS

=10

R



G

Pulsed

[A]

D

10

Ta=2 5oC

9

V

=25V

DD

=7A

I

D

8

=10

R



G

7

Pulsed

[V]

GS

6

5

4

3

2

Gate-Source Voltage : V

1

0

0 5 10 15 20

Total Gate Charge : Qg [nC]

Fig.7 Typical capacitance vs.

Fig.8 Switching Characteristics

Fig.9 Dynamic Input Characteristics

Source-Drain Voltage

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2009.12 - Rev.A

S

Fig.11 Switching Time Waveforms

%

%

V
V

Pulse Width

Fig.12 Gate Charge Test Circuit

I

S

Fig.13 Gate Charge Waveform

V

Measurement circuits

V

GS

R

G

D

I

D.U.T.

Data Sheet RSH070N05

V

D

10%

R

L

V

DD

GS
DS

10%

t

d(on)

t

on

90%

t

r

90%

t

d(off)

50%50%

10

90
t

r

t

off

Fig.10 Switching Time Test Circuit

V

G (Const.)

GS

R

G

I

D.U.T.

D

V

D

R

L

V

DD

V

G

g

Q

GS

Q

gs

Q

gd

Charge

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2009.12 - Rev.A

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