ROHM RSH065N06 Technical data
D
G
D
T
C
R
S
(
C
circuit when the fixed voltages are exceeded.
4V Drive Nch MOSFET
RSH065N06
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Packaging specifications Inner circuit
Type
RSH065N06
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
rain-source voltage
ate-source voltage
rain current
ource current
Body diode)
otal power dissipatino
hannel temperature
ange of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
Limits Unit
60
20
±6.5
∗
1
±26
1.6
∗
1
∗
26
2
2.0
VV
VV
AI
AI
AI
AI
WP
°CTch 150
°CTstg −55 to +150
Thermal resistance
Parameter Symbol Limits Unit
hannel to ambient
∗
Mounted on a ceramic board.
Rth (ch-A) 62.5
∗
°C / W
SOP8
Each lead has same dimensions
(8) (7) (6) (5)
∗2
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
∗1
(8) (7) (6) (5)
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Electrical characteristics (Ta=25C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
V
Static drain-source on-state
resistance
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Symbol
Forward voltage
∗Pulsed
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
r
t
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
∗
Min.
Typ. Max.
−−10 μAV
60 −−VID=1mA, VGS=0V
−−1 μAVDS=60V, VGS=0V
1.0 − 2.5 V VDS=10V, ID=1mAGate threshold voltage
− 24 37 I
− 28 44 mΩ ID=6.5A, VGS=4.5V
− 31 48 I
4 −−SI
− 900 − pF VDS=10V
− 200
−
−
−
−
−
−
−
−−nC
Min. Typ. Max.
−−1.2 V IS=1.6A, VGS=0V
− pF VGS=0V
100
− pF f=1MHz
− ns
13
− ns
25
60
− ns
− ns
20
16 nC
11
2
− nC VGS=5V
4
Unit
GS
=6.5A, VGS=10V
D
=6.5A, VGS=4.0V
D
=6.5A, VDS=10V
D
ID=3.3A, VDD 30V
V
GS
=9.1Ω
R
L
R
=10Ω
G
=6.5A,
I
D
=4.6Ω, RG=10Ω
R
L
Unit
Conditions
=20V, VDS=0V
=10V
30V
V
DD
Conditions
Data Sheet RSH065N06
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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