ROHM RSH065N06 Technical data

D
G

D

T
C
R

S
(

C

circuit when the fixed voltages are exceeded.

4V Drive Nch MOSFET

RSH065N06

Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Application

Switching

Packaging specifications Inner circuit

Type

RSH065N06

Package
Code
Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C)

Parameter
rain-source voltage
ate-source voltage

rain current

ource current

Body diode)

otal power dissipatino

hannel temperature
ange of storage temperature

∗1 Pw≤10μs, Duty cycle≤1%

∗

2 Mounted on a ceramic board.

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

60
20

±6.5

∗

1

±26

1.6

∗

1

∗

26

2

2.0

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

Thermal resistance

Parameter Symbol Limits Unit
hannel to ambient

∗

Mounted on a ceramic board.

Rth (ch-A) 62.5

∗

°C / W

SOP8

Each lead has same dimensions

(8) (7) (6) (5)

∗2

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗A protection diode is included between the gate and

the source terminals to protect the diode against static
electricity when the product is in use. Use the protection

∗1

(8) (7) (6) (5)

(1) (2) (3) (4)

(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain

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Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

V

Static drain-source on-state
resistance

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter Symbol
Forward voltage

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

r

t

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−10 μAV

60 −−VID=1mA, VGS=0V

−−1 μAVDS=60V, VGS=0V

1.0 − 2.5 V VDS=10V, ID=1mAGate threshold voltage

− 24 37 I

− 28 44 mΩ ID=6.5A, VGS=4.5V

− 31 48 I
4 −−SI

− 900 − pF VDS=10V

− 200

−

−

−

−

−

−

−

−−nC

Min. Typ. Max.

−−1.2 V IS=1.6A, VGS=0V

− pF VGS=0V

100

− pF f=1MHz

− ns

13

− ns

25
60

− ns

− ns

20

16 nC

11

2

− nC VGS=5V

4

Unit

GS

=6.5A, VGS=10V

D

=6.5A, VGS=4.0V

D

=6.5A, VDS=10V

D

ID=3.3A, VDD 30V
V

GS

=9.1Ω

R

L

R

=10Ω

G

=6.5A,

I

D

=4.6Ω, RG=10Ω

R

L

Unit

Conditions

=20V, VDS=0V

=10V

30V

V

DD

Conditions

Data Sheet RSH065N06

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2009.12 - Rev.A

.0

10

DRAIN CURRENT : I

(A)

Fig.1

Typical Transfer Characteristics

0

1000

)

0

1000

)

0

1000

)

5

100

)

0

CAPACITANCE : C (pF)

10000

vs. Drain-Source Voltage

0

SWITCHING TIME : t (ns)

10000

0

10

GATE-SOURCE VOLTAGE : V

(V)

cs

.5

10

SOURCE CURRENT : I

(A)

Electrical characteristic curves

Ta=125°C
Ta=75°C

1

Ta=25°C

D

Ta= −25°C

0.1

VDS=10V
Pulsed

(mΩ

DS (on)

R

100

Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C

VGS=10V
Pulsed

(mΩ

DS (on)

R

100

Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C

Data Sheet RSH065N06

VGS=4.5V
Pulsed

0.01

0.001

0.0 0.5 1.0 1.5 2.0 2.5 4

GATE-SOURCE VOLTAGE : VGS (V)

(mΩ

Ta=125°C
Ta=75°C

DS (on)

Ta=25°C

R

100

Ta= −25°C

10

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0.01 10.1 1

DRAIN CURRENT : ID (A)

Fig.4 Static Drain-Source

On-State Resistance
vs. Drain Current(ΙΙΙ )

1000

t

f

t

d(off)

100

10

1

0.01 0.1 1 1

DRAIN CURRENT : ID (A)

Fig.7 Switching Characteristics

3.0 3.5

Ta=25°C

DD

V

GS

V

G

=10Ω

R
Pulsed

t

r

t

d(on)

=30V
=10V

VGS=4V
Pulsed

10

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0.01 10.1 1

DRAIN CURRENT : ID (A)

Fig.2 Static Drain-Source

On-State Resistance
vs. Drain Current(Ι)

(mΩ

DS (on)

R

50

0

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0 5 10 1

GATE-SOURCE VOLTAGE : VGS (V)

Fig.5 Static Drain-Source

ID=6.5A

ID=3.25A

On-State Resistance vs.
Gate-Source Voltage

Ta=25°C

DD

=30V

V

D

=6.5A

I

GS

G

=10Ω

R
Pulsed

5

0

0 5 10 15 2

TOTAL GATE CHARGE : Qg (nC)

Fig.8

Dynamic Input Characteristi

Ta=25°C
Pulsed

10

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0.01 10.1 1

DRAIN CURRENT : ID (A)

Fig.3 Static Drain-Source

On-State Resistance
vs. Drain Current(ΙΙ)

1000

100

10

0.01 0.1 1 10 10

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.6 Typical Capacitance

S

1

Ta=125°C
Ta=75°C

0.1

0.01

0.0 0.5 1.0 1

SOURCE-DRAIN VOLTAGE : VSD (V)

Ta=25°C
Ta= −25°C

Fig.9 Source Current vs.

Source-Drain Voltage

Ta=25°C
f=1MHz

GS

=0V

V

C

C

C

VGS=0V
Pulsed

iss

oss

rss

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

Fig.10 Switching Time Test Circuit

S

%

%

V
V

Pulse Width

Fig.12 Gate Charge Test Circuit

I

S

V

Measurement circuit

V

GS

R

G

D

I

D.U.T.

Data Sheet RSH065N06

V

D

10%

R

L

V

DD

GS
DS

10%

t

d(on)

t

on

90%
t

r

90%

t

d(off)

50%50%

10

90
t

r

t

off

G (Const.)

V

GS

R

G

D

I

D.U.T.

V

D

R

L

V

DD

Fig.11 Switching Time Waveforms

V

G

g

Q

GS

QgsQ

gd

Charge

Fig.13 Gate Charge Waveform

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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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illustrate the standard usage and operations of the Products. The peripheral conditions must
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