RSF014N03
Transistors
4V Drive Nch MOSFET
RSF014N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space savin g, small surface mount package (TUMT3).
3) 4V drive.
zApplications
Switching
zPackaging specifications
Package
Type
RSF014N03
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
20
±1.4
±5.6
0.6
5.6
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
156
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PN
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
0.2Max.
(3)
(1)
∗1
∗2
(2)
(1) Gate
(2) Source
(3) Drain
Rev.B 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=20V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 − 2.5 V V
− 170 240 I
− 250 350 mΩ
− 270 380 I
1 −−SV
− 70 − pF V
− 1512− pF V
−
6
−
6
−
13
−
8
−
1.4
−
0.6
−
0.3
−−nC I
Min. Typ. Max.
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.4A, VGS= 10V
mΩ
D
= 1.4A, VGS= 4.5V
I
D
= 1.4A, VGS= 4V
mΩ
D
= 10V, ID= 1.4A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
2.0 nC
− nC V
V
DD
ID= 0.7A
V
GS
= 10V
R
L
=21Ω
R
G
=10Ω
V
15V
DD
= 5V
GS
= 1.4A
D
Unit
15V
Conditions
L
=11Ω
R
R
G
=10Ω
Conditions
RSF014N03
Rev.B 2/4
Transistors
zElectrical characteristics curves
1000
(pF)
100
10
CAPACITANCE : C
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
VDS=10V
Pulsed
1
(A)
Ta=125°C
D
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
DRAIN CURRENT : I
0.001
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : V
Fig.4 Typical Transfer Characteristics
10000
(mΩ)
Ta=125°C
DS (on)
1000
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=25°C
f=1MHz
=0V
V
GS
C
iss
C
oss
C
rss
(V)
DS
GS
VGS=10V
Pulsed
(V)
1000
(ns)
100
tf
Ta=25°C
V
DD
V
GS
=10Ω
R
G
Pulsed
td (off)
10
td (on)
SWITCHING TIME : t
tr
1
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.2 Switching Characteristics
1000
Ta=25°C
900
Pulsed
(mΩ)
800
DS (on)
700
600
500
ID=0.7A
400
300
200
100
0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
024 6810
ID=1.4A
GATE SOURCE VOLTAGE : V
Fig.5 Static Drain-Source
On-State Resistance
vs. Gate-Source Voltage
10000
(mΩ)
DS (on)
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4.5V
Pulsed
=15V
=10V
GS
RSF014N03
10
Ta=25°C
9
=15V
V
DD
(V)
=1.4A
I
D
GS
8
=10Ω
R
G
Pulsed
7
6
5
4
3
2
1
GATE SOURCE VOLTAGE : V
0
0123
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
(A)
S
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
SOURCE CURRENT : I
0.01
(V)
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
VGS=0V
Pulsed
SD
Fig.6 Source Current vs.
Source-Drain Voltage
10000
(mΩ)
Ta=125°C
1000
Ta=75°C
Ta=25°C
Ta= −25°C
DS (om)
(V)
VGS=4V
Pulsed
100
10
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : R
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
100
10
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : R
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙ )
100
10
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : R
0.01 0.1 1 10
DRAIN CURRENT : I
(A)
D
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙΙ )
Rev.B 3/4
Transistors
1000
(mΩ)
DS (on)
100
STATIC DRAIN- SOURCE
ON-STATE RESISTANCE : R
0.1 1 10
VGS=4V
VGS=4.5V
VGS=10V
DRAIN CURRENT : I
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
Ta=25°C
Pulsed
(A)
D
RSF014N03
Rev.B 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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