ROHM RSF014N03 Technical data
RSF014N03
Transistors
4V Drive Nch MOSFET
RSF014N03
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) Space savin g, small surface mount package (TUMT3).
3) 4V drive.
zApplications
Switching
zPackaging specifications
Package
Type
RSF014N03
Code
Basic ordering unit (pieces)
zInner circuit
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
D
∗1
∗1
∗2
Limits Unit
30
20
±1.4
±5.6
0.6
5.6
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
∗
156
TUMT3
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : PN
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VV
VV
AI
AI
AI
AI
WP
°CTch
°CTstg
°C/WRth(ch-a)
0.2Max.
(3)
(1)
∗1
∗2
(2)
(1) Gate
(2) Source
(3) Drain
Rev.B 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
I
GSS
I
DSS
GS (th)
DS (on)
Y
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
Q
Q
gs
Q
gd
V
SD
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
∗
Min.−Typ. Max.
− 10 µAVGS=20V, VDS=0V
30 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 − 2.5 V V
− 170 240 I
− 250 350 mΩ
− 270 380 I
1 −−SV
− 70 − pF V
− 1512− pF V
−
6
−
6
−
13
−
8
−
1.4
−
0.6
−
0.3
−−nC I
Min. Typ. Max.
−−1.2 V IS= 0.6A, VGS=0VForward voltage
Unit
= 30V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 1.4A, VGS= 10V
mΩ
D
= 1.4A, VGS= 4.5V
I
D
= 1.4A, VGS= 4V
mΩ
D
= 10V, ID= 1.4A
DS
= 10V
DS
=0V
GS
− pF f=1MHz
− ns
− ns
− ns
− ns
2.0 nC
− nC V
V
DD
ID= 0.7A
V
GS
= 10V
R
L
=21Ω
R
G
=10Ω
V
15V
DD
= 5V
GS
= 1.4A
D
Unit
15V
Conditions
L
=11Ω
R
R
G
=10Ω
Conditions
RSF014N03
Rev.B 2/4
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