ROHM RSE002P03 Technical data
RSE002P03
Transistors
4V Drive Pch MOSFET
RSE002P03
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Small package (EMT3).
3) 4V drive.
zApplications
Switching
zPackage specifications zInner circuit
EMT3
(1)Source
(2)Gate
(3)Drain
1.6
0.3
(3)
(2)
(1)
0.2
0.2
0.5
0.5
1.0
Abbreviated symbol : WP
0.7
0.55
1.6
0.8
0.15
0.1Min.
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
RSE002P03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Symbol Limits Unit
Rth(ch-a)
Limits Unit
−30
±20
±0.2
±0.4
0.15
150
−55 to +150
∗
833
°C/W
(3)
(2)
∗1
∗2
(1)
(1) Source
(2) Gate
(3) Drain
VV
VV
AI
AI
W
°CTch
°CTstg
Rev.A 1/4
Transistors
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
∗Pulsed
zBody diode characteristics (Source-drain) (T a=25°C)
Parameter Symbol
Min.−Typ. Max.
I
GSS
−±10 µAVGS= ±20V, VDS=0V
−30 −−VI
I
DSS
GS (th)
−−−1 µAV
−1.0 −−2.5 V V
− 0.9 1.4 I
∗
DS (on)
− 1.4 2.1 Ω
− 1.6 2.4 I
∗
0.2 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
− 30 − pF V
iss
− 4
oss
5
−
rss
∗
∗
t
r
∗
∗
t
f
8
−
5
−
30
−
40
−−ns
Min. Typ. Max.
V
SD
−−−1.2 V IS= −0.1A, VGS=0VForward voltage
Unit
= −1mA, VGS=0V
D
= −30V, VGS=0V
DS
= −10V, ID= −1mA
DS
= −0.2A, VGS= −10V
Ω
D
= −0.15A, VGS= −4.5V
I
D
= −0.15A, VGS= −4.0V
Ω
D
= −10V, ID= −0.15A
DS
= −10V
DS
− pF V
GS
= 0V
− pF f=1MHz
− ns
− ns
− ns
V
DD
ID= −0.15A
V
GS
= −10V
R
L
= 100Ω
R
G
= 10Ω
Unit
RSE002P03
Conditions
−15V
Conditions
Rev.A 2/4
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