ROHM RSD200N05 Technical data
Data Sheet
4V Drive Nch MOSFET
RSD200N05
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 2500
RSD200N05
CPT3
(S C-63)
<SO T-428>
6.5
5.1
0.75
0.9
0.9
0.65
2.3
(1)
(3)
(2)
∗1
2.3
0.5
1.5
5.5
2.3
9.5
1.5
2.5
0.8Min.
0.5
1.0
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw≤10s, Duty cycle≤1%
*2 T
=25C
c
Thermal resistance
Parameter
Symbol Limits Unit
Channel to Case R
* Tc=25C
DSS
GSS
D
DP
S
SP
D
ch
stg
th (ch-c)
45 V
20 V
20 A
*1
*1
40 A
16 A
*1
*2
40 A
20 W
150 C
55to150 C
*
6.25 C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
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1/6
2011.08 - Rev.A
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Data Sheet
RSD200N05
Electrical characteristics (Ta = 25°C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
45 - - V ID=1mA, VGS=0V
--1AVDS=45V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
-2028 I
Static drain-source on-state
resistance
R
DS (on)
*
-2535 I
m
-2840 I
*
iss
oss
rss
d(on)
d(off)
gd
*
- 950 - pF VDS=10V
- 250 - pF VGS=0V
- 120 - pF f=1MHz
- 10 - ns ID=10A, VDD 25V
*
*
- 20 - ns VGS=10V
*
*
r
- 50 - ns RL=2.5
*
*
*
*
f
g
gs
- 20 - ns RG=10
*
*
- 12 - nC VDD 25V
*
*
- 3.5 - nC ID=20A,
- 4.0 - nC VGS=5V
*
*
Forward transfer admittance l Yfs l10 - - SID=20A, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Conditions
=20A, VGS=10V
D
=20A, VGS=4.5V
D
=20A, VGS=4.0V
D
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=20A, VGS=0V
Conditions
2/6
2011.08 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSD200N05
Electrical characteristic curves (Ta=25C)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
VGS=2.6V
VGS=3.5V
Ta=25°C
pulsed
0
5
10
15
20
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=2.8V
VGS=2.6V
VGS=4.5V
VGS=4.0V
Ta=25°C
pulsed
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V
VGS=4.0V
VGS=10V
Ta=25°C
pulsed
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS
(on) [mW]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS
(on) [mW]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS
(on) [mW]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.08 - Rev.A
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