Datasheet RSD200N05 Datasheet (ROHM)

Data Sheet

4V Drive Nch MOSFET

RSD200N05

Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Drive circuits can be simple.

4) Parallel use is easy.

Application

Switching

Packaging specifications  Inner circuit

Package Taping

Type

Code TL Basic ordering unit (pieces) 2500

RSD200N05 

CPT3

(S C-63) <SO T-428>

6.5

5.1

0.75

0.9

0.65

2.3

(1)

(3)

(2)

∗1

2.3

0.5

1.5

5.5

2.3

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗2

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw≤10s, Duty cycle≤1%

*2 T

=25C

c

Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* Tc=25C

DSS

GSS

D

DP

S

SP

D

ch

stg

th (ch-c)

45 V

20 V

20 A

*1

40 A

16 A

*1

*2

40 A

20 W

150 C

55to150 C

*

6.25 C / W

(1) Gate (2) Drain (3) Source

(1) (2) (3)

1 ESD PROTECTION DIODE 2 BODY DIODE

1/6

2011.08 - Rev.A

Data Sheet

RSD200N05

Electrical characteristics (Ta = 25°C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

45 - - V ID=1mA, VGS=0V

--1AVDS=45V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-2028 I

Static drain-source on-state resistance

R

DS (on)

*

-2535 I

m

-2840 I

*

iss

oss

rss

d(on)

d(off)

gd

*

- 950 - pF VDS=10V

- 250 - pF VGS=0V

- 120 - pF f=1MHz

- 10 - ns ID=10A, VDD 25V

*

- 20 - ns VGS=10V

*

r

- 50 - ns RL=2.5

*

f

g

gs

- 20 - ns RG=10

*

- 12 - nC VDD 25V

*

- 3.5 - nC ID=20A,

- 4.0 - nC VGS=5V

*

Forward transfer admittance l Yfs l10 - - SID=20A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=20A, VGS=10V

D

=20A, VGS=4.5V

D

=20A, VGS=4.0V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=20A, VGS=0V

Conditions

2/6

2011.08 - Rev.A

Data Sheet

RSD200N05

Electrical characteristic curves (Ta=25C)

0

5

10

15

20

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

VGS=2.6V

VGS=3.5V

Ta=25°C pulsed

0

5

10

15

20

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=10.0V

VGS=2.8V

VGS=2.6V

VGS=4.5V

VGS=4.0V

Ta=25°C pulsed

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V

VGS=4.0V

VGS=10V

Ta=25°C pulsed

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS

(on) [mW]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS

(on) [mW]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS

(on) [mW]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

3/6

2011.08 - Rev.A

Data Sheet

RSD200N05

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

|Yfs| [S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Current : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : I

S

[A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

30

60

90

120

150

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=20A

ID=10A

Ta=25°C pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on) tr

t

d(off)

t

f

VDD≒25V V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16 18 20 22

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C VDD=25V I

D

=20A

Pulsed

4/6

2011.08 - Rev.A

Data Sheet

RSD200N05

1

10

100

1000

10000

100000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

c

=25°C

Single Pulse

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

C

=25°C

Single Pulse

R

th(ch-c)

=6.25°C/W

R

th(ch-a)(t)=r(t)×Rth(ch-a)

5/6

2011.08 - Rev.A

Data Sheet

RSD200N05

F

it

%

V V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

VGS

RG

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D

I

RL

VDD

D

I

R

L

V

DD

VDS

Pulse width

50%

10%

GS DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

6/6

2011.08 - Rev.A

Notes

Notice

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R1120A

Datasheet RSD200N05 Datasheet (ROHM)

Specifications and Main Features

Frequently Asked Questions

User Manual