ROHM RSD175N10 Technical data
Data Sheet
4V Drive Nch MOSFET
RSD175N10
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
4) 4V drive.
4) High power package.
Application
Switching
CPT3
(SC-63)
<SOT-428>
0.75
6.5
5.1
0.9
0.65
2.30.9
(1)
(3)
(2)
2.3
0.5
1.5
5.5
2.3
1.5
0.8Min.
0.5
1.0
9.5
2.5
Packaging specifications Inner circuit
Package Taping
Type
Code TL
Basic ordering unit (pieces) 2500
RSD175N10
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
DSS
GSS
D
DP
S
SP
D
*3
*1
*3
*1
*2
100 V
20 V
17.5 A
35 A
17.5 A
35 A
20 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 PW10s, Duty cycle1%
=25°C
*2 T
C
*3 Please use within the range of SOA.
∗1
∗2
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Case Rth (ch-c) 6.25 C / W
* TC=25°C
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Symbol Limits Unit
*
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Data Sheet
RSD175N10
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
100 - - V ID=1mA, VGS=0V
--1AVDS=100V, VGS=0V
1 - 2.5 V VDS=10V, ID=1mA
Conditions
- 75 105 ID=8.8A, VGS=10V
Static drain-source on-state
resistance
R
DS (on)
*
- 80 112 ID=8.8A, VGS=4.5V
m
- 85 119 ID=8.8A, VGS=4V
*
iss
oss
rss
d(on)
d(off)
gd
*
- 950 - pF VDS=25V
- 85 - pF VGS=0V
- 55 - pF f=1MHz
- 10 - ns VDD 50V, ID=8.8A
*
*
- 25 - ns VGS=10V
*
*
r
- 60 - ns RL=5.7
*
*
- 50 - ns RG=10
*
*
f
- 24 - nC VDD 50V, ID=17.5A
*
*
g
-3-nCV
*
*
gs
-6-nC
*
*
GS
=10V
Forward transfer admittance l Yfs l5 - - SVDS=10V, ID=8.8A
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
Conditions
- - 1.5 V Is=17.5A, VGS=0V
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2011.06 - Rev.A
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Data Sheet
RSD175N10
Electrical characteristic curves (Ta=25C)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
Ta=25°C
pulsed
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
0
2.5
5
7.5
10
12.5
15
17.5
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta=25°C
pulsed
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
Ta=25°C
pulsed
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.06 - Rev.A
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