ROHM RSD175N10 Technical data

Data Sheet

4V Drive Nch MOSFET

RSD175N10

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

4) 4V drive.

4) High power package.

 Application

Switching

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RSD175N10 

(1) Gate
(2) Drain
(3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*3

*1

*3

*1

*2

100 V

20 V

17.5 A

35 A

17.5 A

35 A

20 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 PW10s, Duty cycle1%

=25°C

*2 T

C

*3 Please use within the range of SOA.

∗1

∗2

(1) (2) (3)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 6.25 C / W

* TC=25°C

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Symbol Limits Unit

*

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Data Sheet

RSD175N10

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1 - 2.5 V VDS=10V, ID=1mA

Conditions

- 75 105 ID=8.8A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 80 112 ID=8.8A, VGS=4.5V

m

- 85 119 ID=8.8A, VGS=4V

*

iss

oss

rss

d(on)

d(off)

gd

*

- 950 - pF VDS=25V

- 85 - pF VGS=0V

- 55 - pF f=1MHz

- 10 - ns VDD 50V, ID=8.8A

*

*

- 25 - ns VGS=10V

*

*

r

- 60 - ns RL=5.7

*

*

- 50 - ns RG=10

*

*

f

- 24 - nC VDD 50V, ID=17.5A

*

*

g

-3-nCV

*

*

gs

-6-nC

*

*

GS

=10V

Forward transfer admittance l Yfs l5 - - SVDS=10V, ID=8.8A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.5 V Is=17.5A, VGS=0V

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Data Sheet

RSD175N10

Electrical characteristic curves (Ta=25C)

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

Ta=25°C
pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

0

2.5

5

7.5

10

12.5

15

17.5

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=3.0V

Ta=25°C
pulsed

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V
VGS=10V

Ta=25°C
pulsed

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

T

a

=125°C

T

a

=75°C

T

a

=25°C

T

a

=-25°C

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=4.5V

pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

V

GS

=4V

pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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Data Sheet

RSD175N10

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

50

100

150

200

250

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source

Voltage

ID=8.8A

ID=17.5A

Ta=25°C
pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

t

r

t

t

VDD≒50V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed

0

2

4

6

8

10

0 5 10 15 20 25

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

T

a

=25°C

VDD=50V
I

D

=17.5A

Pulsed

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Data Sheet

RSD175N10

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

Ta=25°C
f=1MHz

VGS=0V

C

iss

C

oss

C

rss

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Mounted on a recommended land.
(20mm

× 20mm × 0.8mm)

Rth

(ch-a)

=103.5°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.15 Maximum Safe Operating Area

T

c

=25°C

Single Pulse

Operation in this area is limited

by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

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Data Sheet

RSD175N10

S

%

V
V

V

S

 Measurement circuits

V

GS

R

G

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

D.U.T.

D

I

VD

RL

VDD

Fig.2-1 Gate Charge Measurement Circuit

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

6/6

2011.06 - Rev.A

Notes

Notice

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