ROHM RSD150N06 Technical data

Data Sheet

4V Drive Nch MOSFET

RSD150N06

Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Fast switching speed.

3) Drive circuits can be simple.

4) Parallel use is easy.

Applications

Switching

Packaging specifications  Inner circuit

Package CPT3

Type

Code TL Basic ordering unit (pieces) 2500

CPT3

(S C-63) <SO T-428>

(1) Gate (2) Drain (3) Source

6.5

5.1

0.75

0.9

0.65

2.3

(1)

(3)

(2)

∗1

2.3

0.5

1.5

5.5

2.3

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗2

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw10s, Duty cycle1%

*2 T

=25°C

c

Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* Tc=25C

DSS

GSS

D

DP

S

SP

D

ch

stg

th (ch-c)

60 V

20 V

15 A

*1

30 A

15 A

*1

*2

30 A

20 W

150 C

55 to +150 C

*

6.25 C / W

1 ESD Protection Diode 2 Body Diode

(1) (2) (3)

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Data Sheet

RSD150N06

Electrical characteristics (Ta=25°C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state resistance

Forward transfer admittance l Yfs l7 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

60 - - V ID=1mA, VGS=0V

--1AVDS=60V, VGS=0V

1.0 - 3.0 V VDS=10V, ID=1mA

-2840 I

*

R

DS (on)

-3347 I

m

-3651 I

*

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

- 930 - pF VDS=10V

- 200 - pF VGS=0V

- 80 - pF f=1MHz

- 10 - ns ID=7.5A, VDD 30V

*

- 30 - ns VGS=10V

*

- 45 - ns RL=4.0

*

- 15 - ns RG=10

*

- 18.0 - nC VDD 30V

*

- 3.2 - nC ID=15A,

- 3.8 - nC VGS=10V

*

=15A, VGS=10V

D

=15A, VGS=4.5V

D

=15A, VGS=4.0V

D

=15A, VDS=10V

D

Conditions

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=15A, VGS=0V

Conditions

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Data Sheet

RSD150N06

Electrical characteristic curves (Ta=25C)

-5

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.8V

T

a

=25°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

VGS=3.6V

-5

0

5

10

15

20

25

30

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.8V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

VGS=3.6V

Ta=25°C pulsed

10

100

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V VGS=4.5V

VGS=10V

Ta=25°C pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

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Data Sheet

RSD150N06

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.00001

0.0001

0.001

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

100

200

0 2 4 6 8 10 12 14 16 18 20

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=15.0A

ID=7.5A

Ta=25°C pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

tr t

d(off)

t

f

VDD≒30V V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

12

14

0 5 10 15 20 25

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C VDD=30V ID=15A Pulsed

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Data Sheet

RSD150N06

1

10

100

1000

10000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

c

=25°C

Single Pulse

Operation in this area is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r(t)

Pulse width : Pw(s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

Tc=25°C Single Pulse

Rth

(ch-c)

=6.25°C/W

Rth

(ch-c)

(t)=r(t)×Rth

(ch-c)

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Data Sheet

RSD150N06

S

%

V V

V

S

 Measurement circuits

V

GS

R

G

Fig.1-1 Switching Time Measurement Circuit

VGS

IG(Const.)

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

D

I

V

D

R

L

V

DD

D

VD

RL

VDD

Pulse width

50%

10%

GS DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

off

Fig.1-2　Switching Waveforms

V

G

Q

g

GS

QgsQ

gd

Charge

Fig.2-2 Gate Charge Waveform

t

f

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Notes

Notice

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R1120A

ROHM RSD150N06 Technical data

Specifications and Main Features

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