ROHM RSD100N10 Technical data

Data Sheet

4V Drive Nch MOSFET

RSD100N10

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) 4V drive.

3) High power package.

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RSD100N10 

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

∗1

2.3

0.5

1.5

5.5

2.3

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗2

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*3

*1

*3

*1

*2

100 V

20 V

10 A

20 A

10 A

20 A

20 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 PW10s, Duty cycle1%

=25°C

*2 T

C

*3 Please use within the range of SOA.

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 6.25 C / W

* TC=25°C

Symbol Limits Unit

*

(1) Gate
(2) Drain
(3) Source

(1) (2) (3)

1 ESD PROTECTION DIODE
2 BODY DIODE

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2011.06 - Rev.A

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Data Sheet

RSD100N10

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--1AVDS=100V, VGS=0V

1 - 2.5 V VDS=10V, ID=1mA

- 95 133 I

*

- 100 140 I

m

- 105 147 I

*

l 4.5 - - S VDS=10V, ID=5A

- 700 - pF VDS=25V

- 65 - pF VGS=0V

- 40 - pF f=1MHz

*

- 10 - ns VDD 50V, ID=5A

*

- 17 - ns VGS=10V

*

- 50 - ns RL=10

*

- 20 - ns RG=10

*

- 18 - nC VDD 50V, ID=10A

*

-2-nCV

*

- 4.5 - nC

=5A, VGS=10V

D

=5A, VGS=4.5V

D

=5A, VGS=4V

D

=10V

GS

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.5 V Is=10A, VGS=0V

2/6

2011.06 - Rev.A

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© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RSD100N10

Electrical characteristic curves (Ta=25C)

0

2

4

6

8

10

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=2.0V

Ta=25°C
pulsed

0

2

4

6

8

10

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=2.5V

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=2.8V

VGS=2.0V

Ta=25°C
pulsed

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V

VGS=10V

Ta=25°C
pulsed

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

3/6

2011.06 - Rev.A