ROHM RSD080N06 Technical data

Data Sheet

4V Drive Nch MOSFET

RSD080N06

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) 4V drive.

3) High power package(CPT3).

 Application

Switching

CPT3

(SC-63) <SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL Basic ordering unit (pieces) 2500

RSD080N06 

(1) Gate (2) Drain (3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current (Body Diode)

Continuous I

Pulsed I Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*2

60 V

20 V

8A

16 A

8A

16 A

15 W

Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

=25C

*2 T

C

∗1

∗2

(1) (2) (3)

1 ESD PROTECTION DIODE 2 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 8.33 C / W

* TC=25C

Symbol Limits Unit

*

1/6

2011.08 - Rev.A

Data Sheet

RSD080N06

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=20V, VDS=0V

60 - - V ID=1mA, VGS=0V

--1AVDS=60V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-5780 I

*

-7098 I

m

Conditions

=8A, VGS=10V

D

=8A, VGS=4.5V

D

- 78 109 ID=8A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 380 - pF VDS=10V

- 90 - pF VGS=0V

- 50 - pF f=1MHz

-9-nsV

*

- 13 - ns VGS=10V

*

r

- 30 - ns RL=7.5

*

- 10 - ns RG=10

*

f

- 9.4 - nC VDD 30V, ID=8A

*

g

- 1.8 - nC VGS=10V

***

gs

- 2.3 - nC

*

30V, ID=4A

DD

Forward transfer admittance l Yfs l 4.8 - - S VDS=10V, ID=8A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.5 V Is=8A, VGS=0V

2/6

2011.08 - Rev.A

Data Sheet

RSD080N06

Electrical characteristic curves (Ta=25C)

0

2

4

6

8

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

T

a

=25

°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

0

2

4

6

8

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=3.0V

T

a

=25

°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V VGS=4.5V VGS=10V

T

a

=25

°C

pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

3/6

2011.08 - Rev.A

Data Sheet

RSD080N06

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance

Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0.001

0.01

0.1

1

10

100

0.0 1.0 2.0 3.0 4.0 5.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.8 Typical Transfer Characteristics

VDS=10V pulsed

Ta=125°C

Ta=75°C Ta=25°C

Ta=-25°C

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5 2.0

Source Current : I

s

[A]

Source-Drain Voltage : VSD [V]

Fig.9 Source Current vs. Source-Drain Voltage

VGS=0V pulsed

Ta=125°C Ta=75°C Ta=25°C Ta=-25°C

0

50

100

150

200

250

300

0 2 4 6 8 10

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Gate-Source Voltage : VGS [V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

T

a

=25

°C

pulsed

ID=4.0A

ID=8.0A

1

10

100

1000

10000

0.01 0.1 1 10

Switching Time : t [ns]

Drain Current : ID [A]

Fig.11 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒

30V

V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

2

4

6

8

10

0 2 4 6 8 10

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.12 Dynamic Input Characteristics

T

a

=25°C

V

DD

=30V

I

D

=8A

Pulsed

4/6

2011.08 - Rev.A

Data Sheet

RSD080N06

1

10

100

1000

10000

0.01 0.1 1 10 100

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.13 Typical Capacitance vs. Drain-Source Voltage

T

a

=25°C

f=1MHz VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.1 1 10 100

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm)

Operation in this area

is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Mounted on a ceramic board. (30mm

× 30mm × 0.8mm)

Rth

(ch-a)

=47.4°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

5/6

2011.08 - Rev.A

Data Sheet

RSD080N06

F

it

%

V V

F

S

Fig.2-2 Gate Charge Waveform

V

 Measurement circuits

V

GS

D.U.T.

R

G

Pulse width

D

I

V

DS

R

L

V

DD

50%

10%

GS DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

ig.1-1 Switching Time Measurement Circu

V

I

G(Const.)

GS

D.U.T.

D

I

R

L

V

DD

ig.2-1 Gate Charge Measurement Circuit

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

6/6

2011.08 - Rev.A

Notes

Notice

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

R1120A

ROHM RSD080N06 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual