ROHM RSD080N06 Technical data

Data Sheet

4V Drive Nch MOSFET

RSD080N06

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) 4V drive.

3) High power package(CPT3).

 Application

Switching

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RSD080N06 

(1) Gate
(2) Drain
(3) Source

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*2

60 V

20 V

8A

16 A

8A

16 A

15 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

=25C

*2 T

C

∗1

∗2

(1) (2) (3)

1 ESD PROTECTION DIODE
2 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 8.33 C / W

* TC=25C

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Symbol Limits Unit

*

1/6

2011.08 - Rev.A

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Data Sheet

RSD080N06

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

R

GSS

(BR)DSS

DSS

GS (th)

DS (on)

--10 AVGS=20V, VDS=0V

60 - - V ID=1mA, VGS=0V

--1AVDS=60V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-5780 I

*

-7098 I

m

Conditions

=8A, VGS=10V

D

=8A, VGS=4.5V

D

- 78 109 ID=8A, VGS=4.0V

iss

oss

rss

d(on)

d(off)

gd

*

- 380 - pF VDS=10V

- 90 - pF VGS=0V

- 50 - pF f=1MHz

-9-nsV

*

*

- 13 - ns VGS=10V

*

*

r

- 30 - ns RL=7.5

*

*

- 10 - ns RG=10

*

*

f

- 9.4 - nC VDD 30V, ID=8A

*

*

g

- 1.8 - nC VGS=10V

***

gs

- 2.3 - nC

*

30V, ID=4A

DD

Forward transfer admittance l Yfs l 4.8 - - S VDS=10V, ID=8A

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

Conditions

- - 1.5 V Is=8A, VGS=0V

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2011.08 - Rev.A

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Data Sheet

RSD080N06

Electrical characteristic curves (Ta=25C)

0

2

4

6

8

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

T

a

=25

°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

VGS=3.0V

0

2

4

6

8

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=3.0V

T

a

=25

°C

pulsed

VGS=10.0V

VGS=4.0V

VGS=4.5V

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.0V
VGS=4.5V
VGS=10V

T

a

=25

°C

pulsed

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4.5V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[mΩ]

Drain Current : ID [A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

VGS=4V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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2011.08 - Rev.A