ROHM RSD050N10 Technical data

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4V Drive Nch MOSFET

RSD050N10

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

CPT3

(S C-63)
<SO T-428>

Features

1) Low on-resistance.

2) Fast switching speed.

3) Drive circuits can be simple.

3) Parallel use is easy.

Applications

Switching

Packaging specifications Inner circuit

Package CPT3

Type

Code TL
Basic ordering unit (pieces) 2500

(1) Gate
(2) Drain
(3) Source

6.5

5.1

0.75

0.9

0.9

0.65

2.3

(1)

(3)

(2)

∗1

2.3

0.5

1.5

5.5

2.3

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗2

Absolute maximum ratings (T

Parameter

=25°C)

a

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw≦10s, Duty cycle≦1%

*2 T

=25°C

c

Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* Tc=25C

DSS

GSS

D

DP

S

SP

D

ch

stg

th (ch-c)

100 V

20 V

5.0 A

*1

*1

20 A

5.0 A

*1

*2

20 A

15 W

150 °C

55 to +150 °C

*

8.33 °C / W

*1 ESD Protection Diode
*2 Body Diode

(1) (2) (3)

1/6

2012.02 - Rev.B

RSD050N10

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--±10 AVGS=±20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--10AVDS=100V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 135 190 ID=5.0A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 142 200 ID=5.0A, VGS=4.5V

m

- 145 205 ID=5.0A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

- 530 - pF VDS=25V

-50-pFV

GS

=0V

- 30 - pF f=1MHz

-10-nsI

*

*

-15-nsV

*

*

r

-45-nsR

*

*

-15-nsR

*

*

f

-14-nCV

*

*

g

-1.7-nCI

*

*

gs

-3.0-nCV

*

*

=2.5A, VDD 50V

D

=10V

GS

=20

L

=10

G

50V

DD

=5.0A,

D

=10V

GS

Forward transfer admittance l Yfs l 2.5 - - S ID=5.0A, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

DataSheet

Body diode characteristics (Source-Drain) (Ta=25°C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2VI

Conditions

=5.0A, VGS=0V

s

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2/6

2012.02 - Rev.B

RSD050N10

Electrical characteristic curves (Ta=25C)

DataSheet

Fig.1 Typical Output Characteristics (Ⅰ)

5

VGS=10.0V

4

[A]

3

D

2

Drain Current : I

1

0

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

1000

[mΩ]

DS(on)

R

VGS=4.0V

VGS=3.0V

0 0.2 0.4 0.6 0.8 1

Drain-Source Voltage : VDS[V]

Ta=25°C
pulsed

VGS=4.0V
VGS=4.5V

VGS=10V

VGS=2.5V

Ta=25°C
pulsed

Fig.2 Typical Output Characteristics (Ⅱ)

5

4

[A]

D

3

2

Drain Current : I

1

0

10000

1000

[mΩ]

DS(on)

R

100

VGS=10.0V

VGS=4.0V

VGS=3.0V

0246810

Drain-Source Voltage : VDS[V]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

VGS=2.5V

Ta=25°C
pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Static Drain-Source On-State Resistance

[mΩ]

DS(on)

R

Static Drain-Source On-State Resistance

100

0.01 0.1 1 10

Drain Current : ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

10000

VGS=4.5V
pulsed

Ta=125°C

Ta=75°C

1000

100

10

0.01 0.1 1 10

Drain Current : ID[A]

Ta=25°C

Ta=-25°C

Static Drain-Source On-State Resistance

[mΩ]

R

Static Drain-Source On-State Resistance

10

0.01 0.1 1 10

Drain Current : ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

10000

VGS=4V
pulsed

1000

DS(on)

100

10

0.01 0.1 1 10

Drain Current : I

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

[A]

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3/6

2012.02 - Rev.B

RSD050N10

DataSheet

Forward Transfer Admittance

Source Current : Is [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

100

VDS=10V
pulsed

10

1

[S]

fs

Y

0.1

0.01

0.01 0.1 1 10

Drain Current : ID[A]

Fig.9 Source Current vs. Source-Drain Voltage

10

VGS=0V
pulsed

1

0.1

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Fig.8 Typical Transfer Characteristics

10

VDS=10V
pulsed

1

[A]

D

Drain Currnt : I

[mΩ]

DS(on)

R

Static Drain-Source On-State Resistance

0.1

0.01

0.001

500

400

300

200

100

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Gate-Source Voltage : VGS[V]

Fig.10 Static Drain-Source On-State Resistance vs.

Ta=25°C
pulsed

Gate-Source Voltage

ID=5.0A

ID=2.5A

Switching Time : t [ns]

0.01

0.0 0.5 1.0 1.5

Source-Drain Voltage : VSD[V]

Fig.11 Switching Characteristics

10000

1000

t

f

t

d(off)

100

t

10

1

0.01 0.1 1 10

d(on)

t

r

Drain Current : ID[A]

VDD≒50V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed

[V]

GS

Gate-Source Voltage : V

0

0246810

Gate-Source Voltage : VGS[V]

Fig.12 Dynamic Input Characteristics

10

Ta=25°C

=50V

V

DD

I

=5A

D

8

Pulsed

6

4

2

0

0 5 10 15 20

Total Gate Charge : Qg[nC]

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4/6

2012.02 - Rev.B

RSD050N10

DataSheet

Fig.13 Typical Capacitance vs. Drain-Source Voltage

10000

Ta=25°C
f=1MHz

VGS=0V

1000

100

Capacitance : C [pF]

10

1

0.01 0.1 1 10 100 1000

Drain-Source Voltage : VDS[V]

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

10

Tc=25°C
Single Pulse

Rth

=8.33°C/W

(ch-a)

Rth

(t)=r(t)×Rth

(ch-a)

1

(ch-a)

Fig.14 Maximum Safe Operating Area

100

Operation in this area
is limited by R

10

[ A ]

C

iss

C

oss

C

rss

D

1

Drain Current : I

0.1
Ta=25°C

Single Pulse
Mounted on a ceramic board.
（30mm × 30 mm × 0.8mm)

0.01

0.1 1 10 100 1000

Drain-Source Voltage : VDS[ V ]

DS(on) (VGS

= 10V)

PW= 100μs

PW= 1ms

PW= 10ms

DC

Operation

0.1

Normalized Transient Thermal Resistance : r（t）

0.01

0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse width : Pw (s)

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5/6

2012.02 - Rev.B

RSD050N10

Measurement circuits

DataSheet

V

GS

R

G

Fig.1-1 Switching time measurement circuit

V

GS

I

G(Const.)

Fig.2-1 Gate charge measurement circuit

D.U.T.

D.U.T.

D

I

D

I

Pulse width

V

DS

R

L

V

DD

V
V

50%

10%

GS

DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90%

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching waveforms

V

G

V

DS

R

L

V

DD

V

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

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6/6

2012.02 - Rev.B

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