ROHM RSD050N10 Technical data

www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.

4V Drive Nch MOSFET

RSD050N10

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

CPT3

(S C-63)
<SO T-428>

Features

1) Low on-resistance.

2) Fast switching speed.

3) Drive circuits can be simple.

3) Parallel use is easy.

Applications

Switching

Packaging specifications Inner circuit

Package CPT3

Type

Code TL
Basic ordering unit (pieces) 2500

(1) Gate
(2) Drain
(3) Source

6.5

5.1

0.75

0.9

0.9

0.65

2.3

(1)

(3)

(2)

∗1

2.3

0.5

1.5

5.5

2.3

9.5

1.5

2.5

0.8Min.

0.5

1.0

∗2

Absolute maximum ratings (T

Parameter

=25°C)

a

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Channel temperature T

Range of storage temperature T

*1 Pw≦10s, Duty cycle≦1%

*2 T

=25°C

c

Thermal resistance

Parameter

Symbol Limits Unit

Channel to Case R

* Tc=25C

DSS

GSS

D

DP

S

SP

D

ch

stg

th (ch-c)

100 V

20 V

5.0 A

*1

*1

20 A

5.0 A

*1

*2

20 A

15 W

150 °C

55 to +150 °C

*

8.33 °C / W

*1 ESD Protection Diode
*2 Body Diode

(1) (2) (3)

1/6

2012.02 - Rev.B

RSD050N10

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V

GSS

(BR)DSS

DSS

GS (th)

--±10 AVGS=±20V, VDS=0V

100 - - V ID=1mA, VGS=0V

--10AVDS=100V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

Conditions

- 135 190 ID=5.0A, VGS=10V

Static drain-source on-state
resistance

R

DS (on)

*

- 142 200 ID=5.0A, VGS=4.5V

m

- 145 205 ID=5.0A, VGS=4.0V

*

iss

oss

rss

d(on)

d(off)

gd

*

- 530 - pF VDS=25V

-50-pFV

GS

=0V

- 30 - pF f=1MHz

-10-nsI

*

*

-15-nsV

*

*

r

-45-nsR

*

*

-15-nsR

*

*

f

-14-nCV

*

*

g

-1.7-nCI

*

*

gs

-3.0-nCV

*

*

=2.5A, VDD 50V

D

=10V

GS

=20

L

=10

G

50V

DD

=5.0A,

D

=10V

GS

Forward transfer admittance l Yfs l 2.5 - - S ID=5.0A, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q

*Pulsed

DataSheet

Body diode characteristics (Source-Drain) (Ta=25°C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2VI

Conditions

=5.0A, VGS=0V

s

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

2/6

2012.02 - Rev.B

RSD050N10

Electrical characteristic curves (Ta=25C)

DataSheet

Fig.1 Typical Output Characteristics (Ⅰ)

5

VGS=10.0V

4

[A]

3

D

2

Drain Current : I

1

0

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

1000

[mΩ]

DS(on)

R

VGS=4.0V

VGS=3.0V

0 0.2 0.4 0.6 0.8 1

Drain-Source Voltage : VDS[V]

Ta=25°C
pulsed

VGS=4.0V
VGS=4.5V

VGS=10V

VGS=2.5V

Ta=25°C
pulsed

Fig.2 Typical Output Characteristics (Ⅱ)

5

4

[A]

D

3

2

Drain Current : I

1

0

10000

1000

[mΩ]

DS(on)

R

100

VGS=10.0V

VGS=4.0V

VGS=3.0V

0246810

Drain-Source Voltage : VDS[V]

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

VGS=2.5V

Ta=25°C
pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Static Drain-Source On-State Resistance

[mΩ]

DS(on)

R

Static Drain-Source On-State Resistance

100

0.01 0.1 1 10

Drain Current : ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

10000

VGS=4.5V
pulsed

Ta=125°C

Ta=75°C

1000

100

10

0.01 0.1 1 10

Drain Current : ID[A]

Ta=25°C

Ta=-25°C

Static Drain-Source On-State Resistance

[mΩ]

R

Static Drain-Source On-State Resistance

10

0.01 0.1 1 10

Drain Current : ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

10000

VGS=4V
pulsed

1000

DS(on)

100

10

0.01 0.1 1 10

Drain Current : I

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

[A]

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

3/6

2012.02 - Rev.B