ROHM RSD050N06 Technical data
Data Sheet
4V Drive Nch MOSFET
RSD050N06
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
Applications
Switching
Packaging specifications Inner circuit
Package CPT3
Type
Code TL
Basic ordering unit (pieces) 2500
CPT3
(S C-63)
<SO T-428>
(1) Gate
(2) Drain
(3) Source
6.5
5.1
0.75
0.9
0.9
0.65
2.3
(1)
(3)
(2)
∗1
2.3
0.5
1.5
5.5
2.3
9.5
1.5
2.5
0.8Min.
0.5
1.0
∗2
Absolute maximum ratings (T
Parameter
=25°C)
a
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Channel temperature T
Range of storage temperature T
*1 Pw10s, Duty cycle1%
*2 T
=25°C
c
Thermal resistance
Parameter
Symbol Limits Unit
Channel to Case R
* Tc=25C
DSS
GSS
D
DP
S
SP
D
ch
stg
th (ch-c)
60 V
20 V
5.0 A
*1
*1
*1
15 A
5.0 A
*1
*1
*2
*2
15 A
15 W
150 °C
55 to +150 °C
*
8.33 °C / W
1 ESD Protection Diode
2 Body Diode
(1) (2) (3)
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2011.02 - Rev.A
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Data Sheet
RSD050N06
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
GSS
(BR)DSS
DSS
GS (th)
--10 AVGS=20V, VDS=0V
60 - - V ID=1mA, VGS=0V
--1AVDS=60V, VGS=0V
1.0 - 3.0 V VDS=10V, ID=1mA
Conditions
- 78 109 ID=5.0A, VGS=10V
Static drain-source on-state
resistance
R
DS (on)
*
- 94 131 ID=5.0A, VGS=4.5V
m
- 100 140 ID=5.0A, VGS=4.0V
iss
oss
rss
d(on)
d(off)
gd
*
- 290 - pF VDS=10V
- 90 - pF VGS=0V
- 35 - pF f=1MHz
-8-nsI
*
- 17 - ns VGS=10V
*
r
- 26 - ns RL=12
*
*
f
g
gs
-8-nsR
*
- 8.0 - nC VDD 30V
*
- 1.4 - nC ID=5.0A
- 1.4 - nC VGS=10V
*
=2.5A, VDD 30V
D
=10
G
Forward transfer admittance l Yfs l 3.5 - - S ID=5.0A, VDS=10V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=5.0A, VGS=0V
Conditions
2/6
2011.02 - Rev.A
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Data Sheet
RSD050N06
Electrical characteristic curves (Ta=25C)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0 0.2 0.4 0.6 0.8 1
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
T
a
=25°C
pulsed
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=3.0V
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0 2 4 6 8 10
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=3.5V
VGS=3.0V
Ta=25°C
pulsed
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
Ta=25°C
pulsed
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
1000
0.01 0.1 1 10
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
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2011.02 - Rev.A
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