ROHM RSA6.1EN Schematic [ru]
Diodes
RSA6.1EN
ESD Protection diode
RSA6.1EN
zApplication zExternal dimensions (Unit : mm) zLead size figure (Unit : mm)
ESD Protection
zFeatures
0.25±
(5)
0.1
0.05
2.0±0.2
各リードとも
Each lead has s ame dimens ion
同寸法
(4)
0.15±0.05
1) Small mold type. (UMD5)
2) High reliability.
(1) (3)(2)
0.65
1.3±0.1
0.65
zConstruction
2.1±0.1
1.25±0.1
0.9± 10.
0～0.1
0.1Min
0.7
Silicon epitaxial planar zStructure
ROHM : UMD5
JEDEC : SOT-353
JEITA : SC-88A
dot (year week factory)
0.35
0.9
1.6
0.650.65
UMD5
zT aping dime nsions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.1
0
2.45±0.1
2.25±0.1
0
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Power dissipation 200
Peak Pulse Power- 1( t p=10×1000us)
Peak Pulse Power -2( t p=8×20us )
Junction temperatur e 150
Storage temperature -55 to +150
Parameter Limits
Symbol Unit
Pm
P
pk
P
pk
30
200
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Zener voltage
Reverse current
Forward voltage
Capacitance between terminals
Parameter Conditions
Symbol Min. Typ. Max. Unit
V
Z
I
R
V
F
C
t
6.1 - 7.20 V
--1.0µA
- - 1.25 V
-90-pF
0.3±0.1
1.75±0.1
3.5±0.05
8.0±0.2
φ1.1±0.1
2.4±0.1
5.5±0.2
0～0.5
2.4±0.1
1.15±0.1
W
W
W
℃
℃
I
=1mA
Z
V
=3.0V
R
I
=200mA
F
f=1MHz,V
R
=0V
Rev.C 1/2
RSA6.1EN
Diodes
zElectrical characteristic curves (Ta=25°C)
10
1
Ta=25℃
Ta=-25℃
0.1
0.01
ZENER CURRENT:Iz( mA)
0.001
6 6.5 7 7.5 8
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
Ta=75℃
Ta=125℃
Ta=150℃
1000
100
10
1
0.1
0.01
0.001
REVERSE CURRENT:IR (nA)
0.0001
0.00001
00.511.522.53
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=125℃Ta=150℃
Ta=75℃
Ta=25℃
Ta=-25℃
1000
100
10
TERMINALS:Ct(pF)
CAPACITANC E BETWEEN
1
00.511.522.53
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
7.2
7.1
7
6.9
ZENER VO LTAGE:Vz (Ｖ)
6.8
6.7
100
10
DYNAMIC IMPEDANCE:Zz(Ω)
1
0.1 1 10
AVE:6.891V
Vz DISRESI ON M AP
ZENER CUR RENT(mA)
Zz-Iz CH ARACTERIST ICS
Ta=25℃
IZ=1mA
n=30pcs
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
REVERSE CURRENT:IR(nA)
0.02
0
1000
100
TRANSIENT
10
THAERMAL IMP EDANCE:Rt h (℃/ W)
1
0.001 0.01 0.1 1 10 100 1000
AVE:0.0190nA
IR DISRESION MAP
Mounted on epoxy board
IM=10mA IF=100mA
time
1ms
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ta=25℃
VR=3V
n=30pcs
Rth(j-a)
Rth(j-c)
150
140
130
120
110
100
90
CAPACITANCE
80
70
BETWEENTERMINALS:Ct(pF)
60
50
AVE:99. 8pF
Ct DISRESION M AP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Rev.C 2/2
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