Datasheet RRR040P03 Datasheet (ROHM)

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4V Drive Pch MOSFET



2

(3)

(

(2)

RRR040P03

 Structure  Dimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT3

Features

1) Low On-resistance.

2) Space saving small surface mount package (TSMT3).

3) 4V drive.

(1) (2)

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 3000

RRR040P03 

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

DSS

GSS

D

DP

S

SP

D

30 V

 20 V

 4A

*1

 16 A

0.8 A

*1

*2

16 A

1.0 W

(1) Gate
(2) Source
(3) Drain

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

(3)

Abbreviated symbol : UG

1)

∗1

∗

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 125  C / W

*Mounted on a ceramic board.

Symbol Limits Unit

*

1/5

2010.04 - Rev.A

Data Sheet

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RRR040P03

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1 AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-3245 I

Static drain-source on-state
resistance

R

DS (on)

*

-4563 I

m

-5272 I

*

iss

oss

rss

d(on)

d(off)

gd

*

- 1000 - pF VDS=10V

- 150 - pF VGS=0V

- 130 - pF f=1MHz

- 15 - ns ID=2A, VDD 15V

*

*

- 30 - ns VGS=10V

*

*

r

- 85 - ns RL=7.5

*

*

*

*

f

g

gs

- 45 - ns RG=10

*

*

- 10.5 - nC ID=4A, VDD 15V

*

*

- 3.0 - nC VGS=5V RL=3.8

- 3.3 - nC RG=10

*

*

Forward transfer admittance l Yfs l 2.7 - - S ID=4A, VDS=10V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Conditions

=4A, VGS=10V

D

=2A, VGS=4.5V

D

=2A, VGS=4.0V

D

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

--1.2 V Is=4A, VGS=0V

Conditions

2/5

2010.04 - Rev.A

Data Sheet

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RRR040P03

STATIC

DRAIN

SOURCE

ON

STATE

STATIC

DRAIN

SOURCE

ON

STATE

STATIC

DRAIN

SOURCE

ON

STATE

SOURCE

CURRENT

I

[A]

 Electrical characteristics curves

4

3

[A]

D

2

1

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

1000

Ta=25°C
Pulsed

-

(on)[mΩ]

DS

100

-

RESISTANCE : R

10

0.1 1 10

VGS= -10V

VGS= -4.5V

VGS= -4.0V

VGS= -2.8V

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics

DRAIN-CURRENT : -ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

Ta=25°C
Pulsed

VGS= -2.5V

VGS= -4.0V

VGS= -4.5V

VGS= -10V

4

[A]

3

D

2

1

DRAIN CURRENT : -I

0

0246810

DRAIN-SOURCE VOLTAGE : -VDS[V]

1000

VGS= -10V

Pulsed

-

(on)[mΩ]

DS

100

-

RESISTANCE : R

10

0.1 1 10

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

VGS= -2.8V

VGS= -10V

VGS= -4.5V

VGS=-4.0V

VGS=-3.0V

VGS= -2.5V

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

DRAIN-CURRENT : -ID[A]

Ta=25°C
Pulsed

100

VDS= -10V

Pulsed

10

[A]

Ta= 125°C

D

Ta= 75°C

1

Ta= 25°C

Ta= - 25°C

0.1

0.01

DRAIN CURRENT : -I

0.001

01234

GATE-SOURCE VOLTAGE : -VGS[V]

1000

VGS= -4.5V

Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -4.0V

-

-

Pulsed

(on)[mΩ]

DS

100

RESISTANCE : R

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

VDS= -10V

Pulsed

1

0.1

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fig.8 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

VGS=0V

s

Pulsed

: -

1

0.1

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

3/5

2010.04 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

RRR040P03

f

STATIC

DRAIN

SOURCE

ON

STATE

150

-

(ON)[mΩ]

100

DS

-

50

RESISTANCE : R

0

0 5 10 15

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz
VGS=0V

1000

100

CAPACITANCE : C [pF]

ID= -2.0A

GATE-SOURCE VOLTAGE : -VGS[V]

Crss

Ta=25°C
Pulsed

ID= -4.0A

Ciss

Coss

10000

t

1000

100

10

SWITCHING TIME : t [ns]

1

0.01 0.1 1 10

d(off)

t

t

d(on)

t

r

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

Ta=25°C
VDD= -15V

VGS= -10V

RG=10Ω

Pulsed

8

[V]

GS

6

4

2

0

GATE-SOURCE VOLTAGE : -V

0 5 10 15

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C
VDD= -15V

ID= -4.0A

RG=10Ω

Pulsed

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

4/5

2010.04 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

RRR040P03

F

S

F

it

S

 Measurement circuits

D

I

V

GS

D.U.T.

R

G

ig.1-1 Switching time measurement circu

D

V

I

G(Const.)

ig.2-1 Gate charge measurement circuit

I

GS

D.U.T.

Pulse Width

V

GS

V

D

R

L

10%

50%

90%

50%

10% 10%

V

DD

V

DS

90% 90%

t

d(on)

t

r

t

on

t

d(off)

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

R

L

V

DD

V

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

5/5

2010.04 - Rev.A

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A