ROHM RRR015P03 Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

RRR015P03

Pch -30V -1.5A Power MOSFET

Junction temperature

T

j

150

°C

Range of storage temperature

T

stg

-55 to +150

°C

Power dissipation
Gate - Source voltage

V

GSS

20

V

P

D

*3

1.0

W

P

D

*4

0.54

W

Continuous drain current

I

D

*1

1.5

A

Pulsed drain current

I

D,pulse

*2

6

A

Drain - Source voltage

V

DSS

-30

V

Taping code

TL

Marking

UJ

l

Absolute maximum ratings(T

a

= 25°C)

Parameter

Symbol

Value

Unit

l

Packaging specifications

Type

Packaging

Taping

l

Application

Reel size (mm)

180

DC/DC converters

Tape width (mm)

8

Basic ordering unit (pcs)

3,000

l

Features

l

Inner circuit

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

4) Pb-free lead plating ; RoHS compliant

l

Outline

V

DSS

-30V

TSMT3

R

DS(on)

(Max.)

160mW

I

D

-1.5A

P

D

1.0W

(1)

(2)

(3)

*1 ESD PROTECTION DIODE
*2 BODY DIODE

(1) Gate

(2) Source
(3) Drain

1/11

2012.09 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RRR015P03

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a ceramic board (30×30×0.8mm)

*4 Mounted on a FR4 (12×20×0.8mm)

*5 Pulsed

W

Transconductance

gfs

*5

VDS= -10V, ID= -1.5A

1.2

3.0-S

Gate input resistannce

R

G

f = 1MHz, open drain

-20-

mW

VGS= -4.5V, ID= -0.7A

-

170

240

VGS= -4.0V, ID= -0.7A

-

190

270

VGS= -10V, ID= -1.5A, Tj=125°C

Static drain - source
on - state resistance

R

DS(on)

*5

VGS= -10V, ID= -1.5A

-

115

160-175

245

V

Gate threshold voltage
temperature coefficient

ΔV

(GS)th

ΔT

j

ID= -1mA
referenced to 25°C

-

3.9

-

mV/°C

Gate threshold voltage

V

GS (th)

V

DS

= -10V, ID = -1mA

-1.0

-

-2.5

mA

Gate - Source leakage current

I

GSS

V

GS

= 20V, V

DS

= 0V

-

-

10

mA

Zero gate voltage drain current

I

DSS

V

DS

= -30V, V

GS

= 0V

-

-

-1

V

Breakdown voltage
temperature coefficient

ΔV

(BR)DSS

ΔT

j

ID= -1mA
referenced to 25°C

-

-25

-

mV/°C

Drain - Source breakdown
voltage

V

(BR)DSS

V

GS

= 0V, ID = -1mA

-30

-

-

lElectrical characteristics(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

lThermal resistance

Parameter

Symbol

Values

Unit
Min.

Typ.

Max.

R

thJA

*4

--231

°C/W

R

thJA

*3

--125

°C/W

Thermal resistance, junction - ambient

2/11

2012.09 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RRR015P03

-

-1.2

V

A

Inverse diode continuous,
forward current

IS

*1

Ta = 25°C

-

-

-0.8

Forward voltage

V

SD

*5

V

GS

= 0V, Is = -1.5A

-

Unit
Min.

Typ.

Max.

-

1.2

-

Gate - Drain charge

Q

gd

*5

-

0.7

-

Gate - Source charge

Q

gs

*5

V

DD

⋍ -15V, ID= -1.5A

VGS = -5V

nC

lBody diode electrical characteristics (Source-Drain)(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

Q

g

*5

V

DD

⋍ -15V, ID= -1.5A

VGS = -5V

-

3.2

-

V

DD

⋍ -15V, ID= -1.5A

VGS = -10V

-

lGate Charge characteristics(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

t

f

*5

RG = 10W

-

13

-

6.5

-

Total gate charge

Unit
Min.

Typ.

Max.

Turn - on delay time

t

d(on)

*5

V

DD

⋍ -15V, V

GS

= -10V

-12-

ns

Rise time

t

r

*5

ID = -0.7A

-8-

Turn - off delay time

t

d(off)

*5

RL = 21.4W

-40-

Fall time

pF

Output capacitance

C

oss

V

DS

= -10V

-40-

Reverse transfer capacitance

C

rss

f = 1MHz

Input capacitance

C

iss

V

GS

= 0V

-

230--33-

lElectrical characteristics(T

a

= 25°C)

Parameter

Symbol

Conditions

Values

Unit
Min.

Typ.

Max.

3/11

2012.09 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RRR015P03

lElectrical characteristic curves

1

10

100

1000

0.0001 0.01 1 100

Ta=25ºC
Single Pulse

0.01

0.1

1

10

100

0.1 1 10 100

Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Operation in this area

is limited by RDS(on)

(VGS = 10V)

PW = 100ms

PW = 1ms

PW = 10ms

DC Operation

0

20

40

60

80

100

120

0 50 100 150 200

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

Power Dissipation : P

D

/P

D

max. [%]

Drain Current : -I

D

[A]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Fig.4 Single Pulse Maxmum Power

dissipation

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : PW [s] Pulse Width : PW [s]

Peak Transient Power : P(W)

Junction Temperature : Tj [°C]

Drain - Source Voltage : -VDS [V]

top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single

Ta=25ºC
Single Pulse

Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)

4/11

2012.09 - Rev.B