Datasheet RRQ045P03 Datasheet (ROHM)

C

4V Drive Pch MOSFET

RRQ045P03

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) High speed switching.

zApplication

Switching

zPackaging specifications zInner circuit

Taping

TR

3000

Type

RRQ045P03

Package
Code

Basic ordering unit
(pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS

V
V

GSS

I

D

I

DP

I

S

I

SP

P

D

Tch

Tstg

Limits Unit

−30
±20

±4.5

∗1

±18

−1.0

∗1

∗2

−18

1.25
150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board

Symbol Limits Unit

∗

Rth(ch-a)

100

TSMT6

(6)

1pin mark

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

V
V
A
A
A
A

W

°C
°C

°C / W

2.9

1.9

0.950.95

(5)

(4)

(2)

(1)

(3)

0.4

Abbreviated symbol : UB

∗2

(2) (3)

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(4)(5)(6)

∗1

(1)Drain
(2)Drain
(3)Gate
(4)Source
(5)Drain
(6)Drain

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zElectrical characteristics (Ta=25°C)

Parameter Symbol

I

V

(BR)DSS

I

V

R

DS(on)

GSS

DSS

GS(th)

∗

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

∗

Y

Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance

n-on delay time

Tur
Rise time
Tur

n-off delay time

Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

fs

C

iss

C

oss

C

rss

d(on)

t

r

t

t

d(off)

f

t

Qg
Qgs
Qgd

∗

∗

∗

∗

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−−1.2 VForward voltage IS= −4.5A, VGS=0V

Min.

−

−30

−

−1.0

−

−

−

3.5

−

−

−

−

−

−

−

−

−

−

Typ. Max.

−

±10

−

−

−1

−

−2.5

25

35
34 48
38

53

−

1350

180
180

10
35

110

65
14

3.5

4.2

−

−

−

−

−

−

−

−

−

−

−

−

Unit

Unit

µA

V

µA

V

mΩ
mΩ
mΩ

S
pF
pF
pF

ns
ns

ns

ns
nC
nC
nC

V
I

D

V
V

D

I

D

I

D

I

V
V

V

=1MHz

f

V

DD

D

I

GS

V
R

L
G

R
V

DD

D

I

GS

V
R

L
G

R

Conditions

GS

=±20V, VDS=0V

=−1mA, VGS=0V

DS

=−30V, VGS=0V

DS

=−10V, ID=−1

mA

=−4.5A, VGS=−10V
=−2.2A, VGS=−4.5V

=−2.2A, VGS=−4.0V

DS

=−10V, ID=−4.5A

DS

=−10V

GS

=0V

−15V

=−2.2A

=−10V

6.8Ω

=10Ω

−15V

=−4.5A

=−5V

3.3Ω

=10Ω

Conditions

Data Sheet RRQ045P03

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2009.06 - Rev.A

V

V

V

zElectrical characteristics curves

4.5

[A]

D

3

1.5

DRAIN CURRENT : -I

VGS= -10
VGS= -4.5
VGS= -4.0

VGS= -2.5V

VGS= -3.0V

Ta=25°C
Pulsed

Data Sheet RRQ045P03

4.5

VGS= -10V
V

= -4.5V

[A]

D

3

1.5

DRAIN CURRENT : -I

V
V

GS

= -4.0V

GS

= -3.0V

GS

Ta=25°C
Pulsed

VGS= -2.5V

10

VDS= -10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

0.1
Ta= - 25°C

DRAIN CURRENT : -I

0.01

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V] DR AIN-SOU RCE VOLT AGE : -VDS[V]

Fi g.1 T ypic al Output C haract eris tics (Ⅰ) Fig .2 Typical Output Characteristi cs(Ⅱ)

1000

Ta=25°C
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -I

Fi g.4 Stat ic D rain- Sourc e On-Stat e

Resistance vs. Drain Curr ent(Ⅰ)

VGS= -4.0V
V

= -4.5V

GS

V

= -10V

GS

[A]

D

0

0246810

1000

VGS= -10V
Pulsed

]

Ω

(on)[m

DS

100

RESISTAN CE : R

STATI C DRAI N-SOU RCE ON -STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.5 Static Drai n-Source On- State

Resistance vs. Drain Curr ent(Ⅱ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

0.001
0123

GATE-SOU RCE VOLTAGE : -VGS[V]

Fi g.3 Typic al Trans fer Char acteri stics

1000

VGS= -4.5V
Pulsed

]

Ω

(on)[m

DS

100

RESISTANCE : R

STAT IC DR AIN-SOU RCE ON -STAT E

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.6 Stati c Drai n-Sourc e On- State

Resistance vs. Drain Curr ent(Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -4.0V
Pulsed

]

Ω

(on)[m

DS

100

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.7 Stat ic D rain- Sourc e On-Stat e

Resistance vs. Drain Curr ent(Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10

VDS= -10V
Pulsed

1

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : -ID[A]

Fi g.8 For ward Tr ansfer Admit tance
vs. Dr ain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

10

VGS=0V
Pulsed

1

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : -VSD [V]

Fi g.9 R ever se Dr ain Cur rent
vs. Sourse-D rain Voltage

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

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2009.06 - Rev.A

F

it

%

V

V

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

Data Sheet RRQ045P03

200

]

Ω

150

(ON)[m

DS

100

50

RESIST ANC E : R

STATIC DRAIN-SOURCE ON-STATE

0

02 46 810

GATE-SOU RCE VOLTAGE : -VGS[V]

Fig .10 Static D rain-Source On- State
Resi stance vs. Gate Source Voltag e

10000

1000

Crss

100

CAPAC ITAN CE : C [pF]

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fi g.13 T ypic al Capac itance
vs. Drain- Source Voltag e

zMeasurement circuits

V

GS

I

D

D.U.T.

R

G

ID= -4.5A

ID= -2.2A

Coss

R

V

Ta= 25°C
Puls ed

L

DD

Ciss

Ta=25°C
f=1MH z
V

=0V

GS

[V]

DS

V

DS

10000

td(off)

1000

100

SWIT CHIN G TIME : t [ns]

10

1

0.01 0.1 1 10

t

f

td(on)

DRAIN-CURRENT : -ID[A]

Fig.11 Switching Characteristics

t

r

Pulse Width

GS

10%

50%

10% 10

DS

t

90% 90%

d(on)

tr

t

on

90%

t

Ta= 25°C
V

DD

V

= -10V

GS

R

=10Ω

G

Puls ed

d(off)

= - 15V

t

50%

off

10

[V]

GS

8

6

4

2

GATE- SOURCE VOLT AGE : -V

0

0 5 10 15 20 25 30

TOTAL GATE C HARGE : Qg [nC]

Fi g.12 D ynamic Input Char acteri stic s

Ta= 25°C
V

= - 15V

DD

I

= -4.5A

D

R

=10Ω

G

Puls ed

tf

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

G

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D.U.T.

Fig.1-2 Switching Waveforms

VG

D

I

V

DS

R

L

GS

QgsQ

V

DD

g

Q

gd

Charge

2009.06 - Rev.A

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