ROHM RRQ030P03 Technical data

C

E

4V Drive Pch MOSFET

RRQ030P03

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) High speed switching.

zApplications zEquivalent circuit
Switching

zPackaging specifications

Taping

TR

3000

Type

RRQ030P03

Package
Code

Basic ordering unit
(pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

V

DSS

VGSS

I

D

IDP

IS
ISP
PD

Tch

Tstg

Limits Unit

−30
±20

±3

∗1

±12

−1

∗1

∗2

−12

1.25
150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

∗

Rth(ch-a)

100

TSMT6

(6)

1pin mark

Abbreviated symbol : UA

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

V
V
A
A
A
A

W

°C
°C

°C / W

2.9

1.9

0.950.95

(5)

(4)

(1)

(2)

(3)

0.4

(2) (3)

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(4)(5)(6)

∗2

∗1

(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURC
(5)DRAIN
(6)DRAIN

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2009 ROHM Co., Ltd. All rights reserved.

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2009.03 - Rev.A

RRQ030P03

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

I

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance

n-on delay time

Tur

C
C

t
Rise time
Tur

n-off delay time

t
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Qgs

Qgd

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

SD

∗ Pulsed

Min.

GSS

−

−30

−

−1.0

−

∗

−

−

∗

Yfs

C

d(on)

d(off)

Qg

2.4

iss

−

oss

rss

t

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

−

∗

−

∗

−

Min. Typ. Max.

∗

−−−1.2 V IS= −3A, VGS=0VForward voltage

Typ. Max.

−

±10

−

−

−

−1

−

−2.5

55

75
85 115
95

125

−

−

480

70
70

18
50
35

5.2

1.6

1.6

−

−

−

7

−

−

−

−

−

−

−

Unit

Unit

µA

GS=±20V, VDS=0V

V

V

I

D=−1 , VGS=0V

µA

V

DS=−30V, VGS=0V
DS=−10V, ID=−1

V

V

mΩ

I

D=−3A, VGS=−10V
D=−1.5A, VGS=−4.5V

I

mΩ

I

D=−1.5A, VGS=−4V

mΩ

S

V

DS=−10V, ID=−3A

pF

V

DS=−10V
GS=0V

V

pF

=1MHz

f

pF

ns

VDD −15V

D=−1.5A

I

ns

GS=−10V

V

ns

R

L 10Ω
G =10Ω

R

ns

VDD −15V

nC

D=−3A

I

GS=−5V

V

nC

R

L 5Ω

nC

G =10Ω

R

Conditions

mA,

mA

Conditions

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.03 - Rev.A