Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
RRL025P03
Pch -30V -2.5A Power MOSFET
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
Power dissipation
Gate - Source voltage
V
GSS
20
V
P
D
*3
1.0
W
P
D
*4
0.32
W
Continuous drain current
I
D
*1
2.5
A
Pulsed drain current
I
D,pulse
*2
10
A
Drain - Source voltage
V
DSS
-30
V
Taping code
TR
Marking
UA
l
Absolute maximum ratings(T
a
= 25°C)
Parameter
Symbol
Value
Unit
l
Packaging specifications
Type
Packaging
Taping
l
Application
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
l
Features
l
Inner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
4) Pb-free lead plating ; RoHS compliant
l
Outline
V
DSS
-30V
TUMT6
R
DS(on)
(Max.)
75mW
I
D
-2.5A
P
D
1.0W
(1)
(2)
(3)
(4)
(5)
(6)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
1/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
W
Transconductance
gfs
*5
VDS= -10V, ID= -2.5A
2.0
4.4-S
Gate input resistannce
R
G
f = 1MHz, open drain
-24-
mW
VGS= -4.5V, ID= -1.2A
-85115
VGS= -4.0V, ID= -1.2A
-95125
VGS= -10V, ID= -2.5A, Tj=125°C
Static drain - source
on - state resistance
R
DS(on)
*5
VGS= -10V, ID= -2.5A
-5575-95
135
V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID= -1mA
referenced to 25°C
-
3.9
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= -10V, ID = -1mA
-1--2.5
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID= -1mA
referenced to 25°C
-
-25
-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = -1mA
-30
-
-
lElectrical characteristics(T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
R
thJA
*4
--391
°C/W
R
thJA
*3
--125
°C/W
Thermal resistance, junction - ambient
2/11
2013.02 - Rev.B
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Data Sheet
RRL025P03
-
-1.2
V
A
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
-
-
-0.8
Forward voltage
V
SD
*5
V
GS
= 0V, Is = -2.5A
-
Min.
Typ.
Max.-1.6
-
Gate - Drain charge
Q
gd
*5
-
1.6
-
lBody diode electrical characteristics (Source-Drain)(T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
nC
Gate - Source charge
Q
gs
*5
V
DD
⋍ -15V, ID= -2.5A
VGS = -5V
Total gate charge
Q
g
*5
V
DD
⋍ -15V, ID= -2.5A
VGS = -5V
V
DD
⋍ -15V, ID= -2.5A
VGS = -10V
-
5.2--12-
-
lGate Charge characteristics(T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*5
V
DD
⋍ -15V, V
GS
= -10V
-7-
ns
Rise time
t
r
*5
ID = -1.2A
-16-
Turn - off delay time
t
d(off)
*5
RL = 12.5W
-50-
Fall time
t
f
*5
RG = 10W
-
33
pF
Output capacitance
C
oss
V
DS
= -10V
-70-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
480--70-
lElectrical characteristics(T
a
= 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
3/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
1
10
100
1000
0.0001 0.01 1 100
Ta=25ºC
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
Operation in this area
is limited by RDS(on)
( VGS = 10V )
PW = 100ms
PW = 1ms
PW = 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0
20
40
60
80
100
120
0 50 100 150 200
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
Rth(ch
-a)=125ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Ta=25ºC
Single Pulse
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Power Dissipation : P
D
/P
D
max. [%]
Drain Current : -I
D
[A]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power
dissipation
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s] Pulse Width : PW [s]
Peak Transient Power : P(W)
Junction Temperature : Tj [°C]
Drain - Source Voltage : -VDS [V]
4/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1
VGS= -3.2V
VGS= -2.8V
VGS= -10V
VGS= -4.5V
VGS= -3.0V
VGS= -3.8V
VGS= -2.5V
Ta=25ºC
Pulsed
0
0.5
1
1.5
2
2.5
3
0 2 4 6 8 10
VGS= -3.2V
VGS= -10V
VGS= -4.5V
VGS= -3.6V
VGS= -3.0V
VGS= -2.8V
Ta=25ºC
Pulsed
0.001
0.01
0.1
1
10
0 1 2 3 4
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
VDS= -10V
Pulsed
0
20
40
60
-50 0 50 100 150
V
GS
= 0V
ID = -1mA
pulsed
Fig.5 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : -VGS [V]
Drain Current : -I
D
[A]
5/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
0.1
1
10
0.1 1 10
VDS= -10V
Pulsed
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0
100
200
300
0 2 4 6 8 10
ID= -3.0A
Ta=25ºC
Pulsed
ID= -1.5A
0
1
2
3
-50 0 50 100 150
V
DS
= 10V
ID = -1mA
pulsed
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : -V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : -ID [A]
Fig.11 Drain CurrentDerating Curve
Drain Current Dissipation
: I
D
/I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : -VGS [V]
6/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
10
100
1000
0.1 1 10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS= -4.5V
Pulsed
10
100
1000
0.1 1 10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS= -10V
Pulsed
10
100
1000
0.1 1 10
Ta=25ºC
Pulsed
VGS= -4.0V
VGS= -4.5V
VGS= -10V
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
V
GS
= -10V
ID = -2.5A
pulsed
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
7/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
Switching Time : t [ns]
1
10
100
1000
0.01 0.1 1 10
tr
tf
t
d(on)
Ta=25ºC
VDD= -15V
VGS= -10V
RG=10W
Pulsed
t
d(off)
Fig.19 Switching Characteristics
10
100
1000
0.1 1 10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS= -4.0V
Pulsed
10
100
1000
0.01 0.1 1 10 100
C
oss
C
rss
C
iss
Ta=25ºC
f=1MHz
VGS=0V
0
2
4
6
8
10
0 2 4 6 8 10
Ta=25ºC
VDD= -15V
ID= -2.5A
RG=10W
Pulsed
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : -VDS [V]
Drain Current : -ID [A]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : -V
GS
[V]
Total Gate Charge : Qg [nC]
8/11
2013.02 - Rev.B
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRL025P03
lElectrical characteristic curves
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VGS=0V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : -I
S
[A]
Source-Drain Voltage : -VSD [V]
9/11
2013.02 - Rev.B
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Data Sheet
RRL025P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2013.02 - Rev.B
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Data Sheet
RRL025P03
lDimensions (Unit : mm)
Dimension in mm/inches
TUMT6
Patterm of terminal position areas
E
H
D
e
b
x S A
L
c
Lp
y
S
A1 A2
A
S
e1
b2
l1
e
A
E
MIN MAX MIN MAX
A - 0.85 - 0.033
A1 0.00 0.10 0 0.004
A2 0.72 0.82 0.028 0.032
b 0.25 0.40 0.01 0.016
c 0.12 0.22 0.005 0.009
D 1.90 2.10 0.075 0.083
E 1.60 1.80 0.063 0.071
e
HE 2.00 2.20 0.079 0.087
L
Lp - 0.40 - 0.016
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.50 - 0.02
l1 - 0.50 - 0.02
INCHES
0.65
0.03
DIM
MILIMETERS
0.20
0.01
DIM
MILIMETERS
INCHES
1.70
0.067
11/11
2013.02 - Rev.B
Notes
1)
The information contained herein is subject to change without notice.
2)
Before you use our Products, please contact our sales representative and verify the latest specifications :
3)
Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4)
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5)
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6)
The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7)
The Products specified in this document are not designed to be radiation tolerant.
8)
For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9)
Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10)
ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11)
ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12)
Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13)
When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14)
This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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