Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RRH040P03
Pch -30V -4A Power MOSFET
lOutline
V
DSS
-30V
R
DS(on)
(Max.)
75mW
I
D
-4A
P
D
2.0W
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
4) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
330
DC/DC Converter
Tape width (mm)
12
Basic ordering unit (pcs)
2,500
Drain - Source voltage
V
DSS
-30
V
Taping code
TB
Marking
RRH040P03
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Continuous drain current
I
D
*1
4
A
Pulsed drain current
I
D,pulse
*2
16
A
Power dissipation
Gate - Source voltage
V
GSS
20
V
Avalanche energy, single pulse
EAS
*3
0.1
mJ
P
D
*4
2.0
W
P
D
*5
0.65
W
Junction temperature
T
j
150
°C
Range of storage temperature
T
stg
-55 to +150
°C
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
SOP8
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
1/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 10mH, V
DD
= -15V, Rg = 25W, starting Tj = 25C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (20×20×0.8mm)
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*5
--192
°C/W
Thermal resistance, junction - ambient
R
thJA
*4
--62.5
°C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = -1mA
referenced to 25°C
-
-25
-
mV/C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = -1mA
-30
-
-
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
--1V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = -1mA
referenced to 25°C
-
3.9
-
mV/C
Gate threshold voltage
V
GS (th)
V
DS
= -10V, ID = -1mA
-1--2.5
Static drain - source
on - state resistance
R
DS(on)
*6
VGS= -10V, ID= -4A
-5575-78
110
mW
VGS= -4.5V, ID= -2A
-85115
VGS= -4.0V, ID= -2A
-95125
VGS= -10V, ID= -4A, Tj=125°C
W
Transconductance
gfs
*6
V
DS
= -10V, ID = -4A
3.0
6.0-S
Gate input resistannce
R
G
f = 1MHz, open drain
-25-
2/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
*6 Plused
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output capacitance
C
oss
V
DS
= -10V
-70-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
480--70-
Turn - on delay time
t
d(on)
*6
V
DD
⋍ -15V, V
GS
= -10V
-7-
ns
Rise time
t
r
*6
ID = -2A
-18-
Turn - off delay time
t
d(off)
*6
RL = 7.5W
-50-
Fall time
t
f
*6
RG = 10W
-37-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-1.6
-
Gate - Drain charge
Q
gd
*6
-
1.6
-
nC
V
DD
⋍ -15V, ID = -4A
VGS = -10V
-
9.6
-
Gate - Source charge
Q
gs
*6
V
DD
⋍ -15V, ID = -4A
VGS = -5V
V
DD
⋍ -15V, ID = -4A
VGS = -5V
-
5.2
-
Q
g
*6
Total gate charge
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Reverse recovery charge
Q
rr
*6
-1020
mC
Reverse recovery time
t
rr
*6
IS = -4A
di/dt = 100A / ms
-2040
Forward voltage
V
SD
*6
V
GS
= 0V, Is = -4.0A
-
-
-1.2
V
Inverse diode continuous,
forward current
ns
IS
*1
Ta = 25°C
-
-
-1.6
A
3/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
1
10
100
1000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=62.5ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Avalanche Current vs. Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0
20
40
60
80
100
120
0 50 100 150 200
0.01
0.1
1
10
100
0.1 1 10 100
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Operation in this area
is limited by RDS(on)
(VGS = 10V )
4/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
VGS= -2.5V
Ta= 25ºC
VGS= -3.0V
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.5V
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10
VGS= -3.0V
VGS= -10V
VGS= -4.0V
VGS= -3.5V
Ta= 25ºC
Fig.5 Avalanche Current vs Inductive Load
Avalanche Current : -I
AR
[A]
Coil Inductance : L [mH]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : E
AS
/ E
AS
max. [%]
Junction Temperature : Tj [ºC]
Fig.7 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.8 Typical Output Characteristics(II)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Starting T
ch
=25
ºC
V
DD
= -15V
V
GS
= -10V
R
G
=10W
Single Pulse
0%
20%
40%
60%
80%
100%
120%
0 25 50 75 100 125 150 175
5/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
0.01
0.1
1
10
1 1.5 2 2.5 3
V
DS
= -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
0.01 0.1 1 10
V
DS
= 10V
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
Fig.9 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.10 Typical Transfer Characteristics
Drain Current : -I
D
[A]
Gate - Source Voltage : -VGS [V]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : -V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.12 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : -ID [A]
0
20
40
60
-50 0 50 100 150
V
GS
= 0V
ID= -1mA
0
1
2
3
-50 0 50 100 150
V
DS
= -
10V
ID= -1mA
6/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
10
100
1000
0.1 1 10
.
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
Fig.13 Drain Current Derating Curve
Drain Current Dissipation
: I
D
/ I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : -VGS [V]
0
50
100
150
200
250
300
0 5 10 15
Ta= 25ºC
ID= -4.0A
ID= -2.0A
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
20
40
60
80
100
-50 -25 0 25 50 75 100 125 150
V
GS
= -10V
ID= -4.0A
7/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
10
100
1000
0.1 1 10
VGS= -4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
0.1 1 10
V
GS
= -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
0.1 1 10
VGS= -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
8/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lElectrical characteristic curves
0.01
0.1
1
10
0 0.5 1 1.5
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
V
GS
= 0V
Fig.20 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : -VDS [V]
Fig.22 Dynamic Input Characteristics
Gate - Source Voltage : -V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.21 Switching Characteristics
Switching Time : t [ns]
Drain Current : -ID [A]
Fig.23 Source Current
vs. Source Drain Voltage
Source Current : -I
S
[A]
Source-Drain Voltage : -VDS [V]
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5 6 7 8 9
Ta = 25ºC
VDD= -15V
ID= -4.0A
RG=10W
1
10
100
1000
10000
0.01 0.1 1 10
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
t
r
t
f
td(on)
td(off)
10
100
1000
10000
0.01 0.1 1 10 100
Ta = 25ºC
f=1MHz
VGS=0V
C
iss
C
oss
C
rss
9/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
10/11
2012.06 - Rev.C
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH040P03
lDimensions (Unit : mm)
Dimension in mm/inches
SOP8
Patterm of terminal position areas
H
E
e
A1
A2
A
c
D
b
x S A
A
y
s
S
E
A3
L1
Lp
e1
b2
l1
e
MIN MAX MIN MAX
A - 1.75 - 0.069
A1
A2 1.40 1.60 0.055 0.063
A3
b 0.30 0.50 0.012 0.02
c 0.10 0.30 0.004 0.012
D 4.80 5.20 0.189 0.205
E 3.75 4.05 0.148 0.159
e
HE 5.70 6.30 0.224 0.248
L1 0.50 0.70 0.02 0.028
Lp 0.65 0.85 0.026 0.033
x
y
MIN MAX MIN MAX
b2 - 0.65 - 0.026
e1
l1 - 1.15 - 0.045
0.25
0.01
5.15
0.203
0.15
0.006
1.27
0.05
DIM
MILIMETERS
INCHES
0.15
0.006
0.10
0.004
DIM
MILIMETERS
INCHES
11/11
2012.06 - Rev.C
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specied herein is intended only to show the typical functions of and
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