ROHM RQ1E100XN Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

RQ1E100XN

Nch 30V 10A Power MOSFET

Range of storage temperature

T

stg

-55 to +150

°C

P

D

*4

0.55

W

Power dissipation
Junction temperature

T

j

150

°C

Gate - Source voltage

V

GSS

20VP

D

*3

1.5

W

Continuous drain current

I

D

*1

10

A

Pulsed drain current

I

D,pulse

*2

36

A

Drain - Source voltage

V

DSS

30

V

Taping code

TR

Marking

XS

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Value

Unit

lPackaging specifications

Type

Packaging

Taping

lApplication

Reel size (mm)

180

DC/DC converters

Tape width (mm)

8

Basic ordering unit (pcs)

3,000

lFeatures

lInner circuit

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT8).

4) Pb-free lead plating ; RoHS compliant

lOutline

V

DSS

30V

R

DS(on)

(Max.)

10.5mW

I

D

10A

P

D

1.5W

(1) Source

(2) Source
(3) Source

(4) Gate

*1 ESD PROTECTION DIODE
*2 BODY DIODE

TSMT8

(5) Drain

(6) Drain
(7) Drain

(8) Drain

(1)

(2)

(3)

(4)

(8)

(7)

(6)

(5)

1/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RQ1E100XN

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (20×20×0.8mm)
*5 Pulsed

W

Transconductance

gfs

*5

V

DS

= 10V, ID = 10A

4.915-

S

Gate input resistannce

R

G

f = 1MHz, open drain

-2-

mW

VGS=4.5V, ID=10A

-

9.5

13.3

VGS=4.0V, ID=10A

-

10.0

14.0

VGS=10V, ID=10A, Tj=125°C

Static drain - source
on - state resistance

R

DS(on)

*5

VGS=10V, ID=10A

-

7.5

10.5-1217V

Gate threshold voltage
temperature coefficient

ΔV

(GS)th

ΔT

j

ID = 1mA
referenced to 25°C

-

-3.7

-

mV/°C

Gate threshold voltage

V

GS (th)

V

DS

= 10V, ID = 1mA

1.0-2.5

mA

Gate - Source leakage current

I

GSS

V

GS

= 20V, V

DS

= 0V

-

-

10

mA

Zero gate voltage drain current

I

DSS

V

DS

= 30V, V

GS

= 0V

--1

V

Breakdown voltage
temperature coefficient

ΔV

(BR)DSS

ΔT

j

ID = 1mA
referenced to 25°C

-35-

mV/°C

Drain - Source breakdown
voltage

V

(BR)DSS

V

GS

= 0V, ID = 1mA

30--

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

R

thJA

*4

--227

°C/W

Thermal resistance, junction - ambient

R

thJA

*3

--83.3

C/W

2/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RQ1E100XN

A

Forward voltage

V

SD

*5

V

GS

= 0V, Is = 10A

--1.2

V

Inverse diode continuous,
forward current

IS

*1

Ta = 25°C

--1.25

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.-2.6

-

Gate - Drain charge

Q

gd

*5

-

6.0

-

nC

V

DD

⋍ 15V, ID = 9A

VGS = 10V

-24-

Gate - Source charge

Q

gs

*5

VDD ⋍ 15V, ID = 10A
VGS = 5V

V

DD

⋍ 15V, ID = 10A

VGS = 5V

-

12.7

-

Total gate charge

Q

g

*5

-

lGate Charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Turn - on delay time

t

d(on)

*5

V

DD

⋍ 15V, V

GS

= 10V

-12-

ns

Rise time

t

r

*5

ID = 5A

-33-

Turn - off delay time

t

d(off)

*5

RL = 3W

-50-

Fall time

t

f

*5

RG = 10W

-

14

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

pF

Output capacitance

C

oss

V

DS

= 10V

-

340

-

Reverse transfer capacitance

C

rss

f = 1MHz

Input capacitance

C

iss

V

GS

= 0V

-

1000--

170

-

3/11

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

RQ1E100XN

lElectrical characteristic curves

0.1

1

10

100

1000

10000

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

0.01

0.1

1

10

100

0.1 1 10 100

PW = 100μs

DC Operation

T

a

=25ºC

Single Pulse
Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Operation in this area

is limited by RDS(on)

( VGS = 10V )

PW = 1ms

PW = 10ms

0

20

40

60

80

100

120

0 50 100 150 200

Fig.1 Power Dissipation Derating Curve

Power Dissipation : P

D

/P

D

max. [%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Drain Current : I

D

[A]

Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width

Normalized Transient Thermal Resistance : r

(t)

Pulse Width : PW [s]

Fig.4 Single Pulse Maxmum Power dissipation

Peak Transient Power : P(W)

Pulse Width : PW [s]

0.001

0.01

0.1

1

10

0.0001 0.01 1 100

T

a

=25ºC

Single Pulse

Rth(ch

-a)=83.3ºC/W

Rth(ch

-a)(t)=r(t)×Rth(ch-a)

Mounted on ceramic board
(30mm × 30mm × 0.8mm)

top D=1

D=0.5
D=0.1

D=0.05
D=0.01
bottom Signle

4/11

2012.06 - Rev.B