ROHM RQ1E075XN Technical data
Data Sheet
4V Drive Nch MOSFET
RQ1E075XN
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TCR
Basic ordering unit (pieces) 3000
RQ1E075XN ○
Absolute maximum ratings (Ta = 25C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
Symbol Limits Unit
*1
*1
*2
30 V
20 V
7.5 A
30 A
1.25 A
30 A
1.5 W
DSS
GSS
D
DP
S
SP
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
TSMT8
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(8) (7) (5)(6)
(1) (2) (4)(3)
Abbreviated symbol : XR
(8) (7) (6) (5)
∗2
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 83.3 C / W
*Mounted on a ceramic board.
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Symbol Limits Unit
*
1/6
2011.04 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E075XN
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=20V, VDS=0V
30 - - V ID=1mA, VGS=0V
--1AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
-1217 I
*
-1724 I
-1927 I
*
l 4.5 - - S ID=7.5A, VDS=10V
- 440 - pF VDS=10V
- 170 - pF VGS=0V
- 85 - pF f=1MHz
-7-nsI
*
- 25 - ns VGS=10V
*
- 35 - ns RL=4.0
*
-7-nsR
*
- 6.8 - nC ID=7.5A, VDD 15
*
- 1.6 - nC VGS=5V
*
- 2.6 - nC
*
=7.5A, VGS=10V
D
m
=7.5A, VGS=4.5V
D
=7.5A, VGS=4.0V
D
=3.75A, VDD 15V
D
=10
G
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=7.5A, VGS=0V
Conditions
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2011.04 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E075XN
Electrical characteristic curves (Ta=25C)
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
VGS= 2.5V
VGS= 3.0V
VGS= 2.8V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
VGS= 2.0V
Ta=25°C
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
0
1
2
3
4
5
6
7
0 2 4 6 8 10
V
GS
= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
VGS= 2.5V
VGS= 2.0V
Ta=25°C
Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.001
0.01
0.1
1
10
100
0 1 2 3
VDS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
1
10
100
0.01 0.1 1 10 100
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
.
Ta=25°C
Pulsed
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
0.01 0.1 1 10 100
VGS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
1
10
100
0.01 0.1 1 10 100
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)[mΩ]
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2011.04 - Rev.A
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