Datasheet RQ1E075XN Datasheet (ROHM)

Data Sheet

4V Drive Nch MOSFET

RQ1E075XN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT8).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TCR
Basic ordering unit (pieces) 3000

RQ1E075XN ○

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

*1

*1

*2

30 V

20 V

7.5 A

30 A

1.25 A

30 A

1.5 W

DSS

GSS

D

DP

S

SP

D

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

TSMT8

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : XR

(8) (7) (6) (5)

∗2

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 83.3 C / W

*Mounted on a ceramic board.

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Symbol Limits Unit

*

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2011.04 - Rev.A

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Data Sheet

RQ1E075XN

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--10 AVGS=20V, VDS=0V

30 - - V ID=1mA, VGS=0V

--1AVDS=30V, VGS=0V

1.0 - 2.5 V VDS=10V, ID=1mA

-1217 I

*

-1724 I

-1927 I

*

l 4.5 - - S ID=7.5A, VDS=10V

- 440 - pF VDS=10V

- 170 - pF VGS=0V

- 85 - pF f=1MHz

-7-nsI

*

- 25 - ns VGS=10V

*

- 35 - ns RL=4.0

*

-7-nsR

*

- 6.8 - nC ID=7.5A, VDD 15

*

- 1.6 - nC VGS=5V

*

- 2.6 - nC

*

=7.5A, VGS=10V

D

m

=7.5A, VGS=4.5V

D

=7.5A, VGS=4.0V

D

=3.75A, VDD 15V

D

=10

G

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.2 V Is=7.5A, VGS=0V

Conditions

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2011.04 - Rev.A

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Data Sheet

RQ1E075XN

Electrical characteristic curves (Ta=25C)

0

1

2

3

4

5

6

7

0 0.2 0.4 0.6 0.8 1

VGS= 2.5V

VGS= 3.0V

VGS= 2.8V

V

GS

= 10V

V

GS

= 4.5V

V

GS

= 4.0V

VGS= 2.0V

Ta=25°C
Pulsed

Fig.1 Typical Output Characteristics(Ⅰ)

DRAIN CURRENT : I

D

[A]

DRAIN-SOURCE VOLTAGE : VDS[V]

0

1

2

3

4

5

6

7

0 2 4 6 8 10

V

GS

= 10V

VGS= 4.5V
VGS= 4.0V

VGS= 2.8V

VGS= 2.5V

VGS= 2.0V

Ta=25°C
Pulsed

Fig.2 Typical Output Characteristics(Ⅱ)

DRAIN-SOURCE VOLTAGE : VDS[V]

DRAIN CURRENT : I

D

[A]

0.001

0.01

0.1

1

10

100

0 1 2 3

VDS= 10V
Pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

Fig.3 Typical Transfer Characteristics

DRAIN CURRENT : I

D

[A]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

0.01 0.1 1 10 100

V

GS

= 4.0V

V

GS

= 4.5V

V

GS

= 10V

.

Ta=25°C
Pulsed

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

1

10

100

0.01 0.1 1 10 100

VGS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

1

10

100

0.01 0.1 1 10 100

VGS= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

3/6

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Data Sheet

RQ1E075XN

1

10

100

0.01 0.1 1 10 100

VGS= 4.0V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : ID[A]

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

on

)[mΩ]

0.1

1

10

100

0.01 0.1 1 10

VDS= 10V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.8 Forward Transfer Admittance
vs. Drain Current

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

0.01

0.1

1

10

100

0 0.5 1 1.5

VGS=0V
Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage

SOURCE CURRENT : Is [A]

SOURCE-DRAIN VOLTAGE : VSD [V]

0

10

20

30

40

50

0 2 4 6 8 10

ID= 7.5A

ID= 3.75A

Ta=25°C
Pulsed

Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

DS

(

ON

)[mΩ]

GATE-SOURCE VOLTAGE : VGS[V]

1

10

100

1000

0.01 0.1 1 10 100

t

f

t

d(on)

t

d(off)

Ta=25°C
VDD=15V
VGS=10V
RG=10Ω

Pulsed

t

r

Fig.11 Switching Characteristics

SWITCHING TIME : t [ns]

DRAIN-CURRENT : ID[A]

0

2

4

6

8

10

0 2 4 6 8 10 12 14 16

Ta=25°C
VDD= 15V
ID= 7.5A
RG=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : V

GS

[V]

TOTAL GATE CHARGE : Qg [nC]

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Data Sheet

RQ1E075XN

10

100

1000

10000

0.01 0.1 1 10 100

C

iss

C

rss

Ta=25°C
f=1MHz

VGS=0V

C

oss

Fig.13 Typical Capacitance
vs. Drain-Source Voltage

DRAIN-SOURCE VOLTAGE : VDS[V]

CAPACITANCE : C [pF]

0.01

0.1

1

10

100

1000

0.1 1 10 100

PW = 10ms

DC operation

Operation in this area is limited by R

DS(ON)

(VGS=10V)

PW=100us

PW=1ms

Ta=25°C
Single Pulse

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)

Fig.14 Maximum Safe Operating Aera

DRAIN CURRENT : I

D

(A)

DRAIN-SOURCE VOLTAGE : VDS[V]

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth

(ch-a)

=83.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

PULSE WIDTH : Pw(s)

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

5/6

2011.04 - Rev.A

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Data Sheet

RQ1E075XN

S

%

V
V

V

S

 Measurement circuits

Fig.1-1 Switching Time Measurement Circuit

I

G(Const.)

V

GS

R

G

D.U.T.

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-2　Switching Waveforms

V

V

GS

D

I

V

D

R

L

D.U.T.

V

DD

G

GS

QgsQ

Q

g

gd

Charge

Pulse width

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

 Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.

6/6

2011.04 - Rev.A

Notes

Notice

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