Datasheet
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RQ1E070RP
Pch -30V -7A Power MOSFET
Range of storage temperature
T
stg
-55 to +150
°C
P
D
*4
0.55
W
Power dissipation
Junction temperature
T
j
150
°C
Gate - Source voltage
V
GSS
20VP
D
*3
1.5
W
Continuous drain current
I
D
*1
7
A
Pulsed drain current
I
D,pulse
*2
28
A
Drain - Source voltage
V
DSS
-30
V
Taping code
TR
Marking
UE
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
180
DC/DC converters
Tape width (mm)
8
Basic ordering unit (pcs)
3,000
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT8).
4) Pb-free lead plating ; RoHS compliant
lOutline
V
DSS
-30V
R
DS(on)
(Max.)
17mW
I
D
-7A
P
D
1.5W
(1) Source
(2) Source
(3) Source
(4) Gate
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(1)
(2)
(3)
(4)
(8)
(7)
(6)
(5)
TSMT8
1/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (20×20×0.8mm)
*5 Pulsed
W
Transconductance
gfs
*5
V
DS
= -10V, ID = -7A
6.015-
S
Gate input resistannce
R
G
f = 1MHz, open drain
-5-
mW
VGS= -4.5V, ID= -3.5A
-1724
VGS= -4.0V, ID= -3.5A
-1927
VGS= -10V, ID= -7A, Tj=125°C
Static drain - source
on - state resistance
R
DS(on)
*5
VGS= -10V, ID= -7A
-1217-2637V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = 1mA
referenced to 25°C
-
3.9
-
mV/°C
Gate threshold voltage
V
GS (th)
V
DS
= -10V, ID = -1mA
-1.0
-
-2.5
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = 1mA
referenced to 25°C
-
-25
-
mV/°C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = 1mA
-30
-
-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*4
--227
°C/W
Thermal resistance, junction - ambient
R
thJA
*3
--83.3
°C/W
2/11
2012.06 - Rev.B
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Data Sheet
RQ1E070RP
A
Forward voltage
V
SD
*5
V
GS
= 0V, Is = -7A
-
-
-1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
-
-
-1
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-7.5
-
Gate - Drain charge
Q
gd
*5
-
8.0
-
nC
V
DD
⋍ -15V, ID = -7A
VGS = -10V
-50-
Gate - Source charge
Q
gs
*5
V
DD
⋍ -15V, ID = -7A
VGS = -5V
V
DD
⋍ -15V, ID = -7A
VGS = -5V
-26-
Total gate charge
Q
g
*5
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*5
V
DD
⋍ -15V, V
GS
= -10V
-16-
ns
Rise time
t
r
*5
ID = -3.5A
-35-
Turn - off delay time
t
d(off)
*5
RL = 4.3W
-
140
-
Fall time
t
f
*5
RG = 10W
-
70
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output capacitance
C
oss
V
DS
= -10V
-
390
-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
2700--
350
-
3/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
0.1
1
10
100
1000
10000
0.0001 0.01 1 100
Ta=25ºC
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Operation in this area
is limited by RDS(on)
( VGS = -10V )
0
20
40
60
80
100
120
0 50 100 150 200
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pulse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=83.3ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
4/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
0
2
4
6
0 0.2 0.4 0.6 0.8 1
VGS= -2.5V
Ta= 25ºC
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.0V
VGS= -2.8V
0
2
4
6
0 2 4 6 8 10
VGS= -2.5V
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.0V
VGS= -2.8V
Ta= 25ºC
5/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
0
20
40
60
-50 0 50 100 150
V
GS
=0V
ID= -1mA
0
1
2
3
-50 0 50 100 150
V
DS
= -10V
ID= -1mA
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Drain Current : -I
D
[A]
Gate - Source Voltage : -VGS [V]
Gate Threshold Voltage : -V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : -ID [A]
0.001
0.01
0.1
1
10
0 1 2 3
VDS= -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
1
10
100
0.01 0.1 1 10
VDS= -10V
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 25ºC
6/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
0
10
20
30
-50 -25 0 25 50 75 100 125 150
V
GS
= -10V
ID= -7A
1
10
100
1000
0.1 1 10
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
20
40
60
80
100
0 5 10 15
ID= -7.0A
ID= -3.5A
Ta= 25ºC
Fig.11 Drain CurrentDerating Curve
Junction Temperature : Tj [ºC]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : -VGS [V]
Drain Current Dissipation : I
D
/ I
D
max.(%)
7/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
1
10
100
1000
0.1 1 10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
V
GS
= -4.5V
1
10
100
1000
0.1 1 10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
V
GS
= -10V
1
10
100
1000
0.1 1 10
V
GS
= -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
8/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : -VDS [V]
Fig.20 Dynamic Input Characteristics
Gate - Source Voltage : -V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.19 Switching Characteristics
Switching Time : t [ns]
Drain Current : -ID [A]
Fig.21 Source Current
vs. Source Drain Voltage
Source Current : -I
S
[A]
Source-Drain Voltage : -VSD [V]
0.01
0.1
1
10
0 0.5 1 1.5
VDS=0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
2
4
6
8
10
0 10 20 30 40 50
Ta = 25ºC
VDD= -15V
ID= -7A
RG=10W
100
1000
10000
0.01 0.1 1 10 100
Ta = 25ºC
f=1MHz
VGS=0V
C
iss
C
oss
C
rss
1
10
100
1000
10000
0.01 0.1 1 10
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
tf
t
d(on)
t
d(off)
tr
9/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
10/11
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RQ1E070RP
lDimensions (Unit : mm)
Dimension in mm/inches
TSMT8
Patterm of terminal position areas
y
S
S
A1
A
E
L1L
D
H
E
A
c
Lp
Lp1
e1
l1
b2
e
l2
b
e
x S A
MIN MAX MIN MAX
A 0.75 0.85 0.03 0.033
A1 0.00 0.05 0 0.002
b 0.27 0.37 0.011 0.015
c 0.12 0.22 0.005 0.009
D 2.90 3.10 0.114 0.122
E 2.30 2.50 0.091 0.098
e
HE 2.70 2.90 0.106 0.114
L 0.10 0.30 0.004 0.012
L1 0.10 0.30 0.004 0.012
Lp 0.19 0.39 0.007 0.015
Lp1 0.19 0.39 0.007 0.015
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b3 - 0.47 - 0.019
l1 - 0.49 - 0.019
l2 - 0.49 - 0.019
2.41
0.10
DIM
MILIMETERS
INCHES
0.65
0.03
DIM
MILIMETERS
INCHES
11/11
2012.06 - Rev.B
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A
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