Datasheet RQ1C075UN Datasheet (ROHM)

1.5V Drive Nch MOSFET

(6)

(2)

(5)

(3)

(1) (4)

(7)(8)

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RQ1C075UN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(1.5V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RQ1C075UN 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

20 V

10 V

7.5 A

30 A

1A

30 A

1.5 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a ceramic board.

TSMT8

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : XH

∗2

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

 Thermal resistance

Channel to Ambient Rth (ch-a) 83.3  C / W

* Each terminal mounted on a ceramic board.

Parameter

Symbol Limits Unit

*

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2010.04 - Rev.A

RQ1C075UN

Data Sheet

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 Electrical characteristics (Ta = 25 C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

Forward transfer admittance l Yfs l7 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=±10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V V

-1116 I

-1420 I

*

-1724 I

-2040 I

*

*

m

10V, ID=1mA

DS=

=7.5A, VGS=4.5V

D

=7.5A, VGS=2.5V

D

=3.7A, VGS=1.8V

D

=1.5A, VGS=1.5V

D

=7.5A, VDS=10V

D

- 1400 - pF VDS=10V

- 310 - pF VGS=0V

- 210 - pF f=1MHz

- 15 - ns ID=3.7A, VDD 10V

*

*

- 50 - ns VGS=4.5V

*

*

- 100 - ns RL=2.7

*

*

*

*

- 85 - ns RG=10

*

*

- 18 - nC ID=7.5A, RL=1.3

*

*

- 3.2 - nC VDD 10V, RG=10

*

*

- 2.9 - nC VGS=4.5V

ConditionsParameter

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

*

Forward Voltage V

*Pulsed

SD

- - 1.2 V Is=7.5A, VGS=0V

ConditionsParameter

2/5

2010.04 - Rev.A

RQ1C075UN

Data Sheet

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 Electrical characteristic curves

8

[A]

6

D

4

VGS= 1.2V

2

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics

100

Ta= 25°C
Pulsed

(on)[mΩ]

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10 100

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

VGS= 4.5V

VGS= 2.5V

VGS= 1.8V

VGS= 1.5V

DRAIN-CURRENT : ID[A]

VGS=1.5V

VGS=1.8V

VGS=2.5V

VGS=4.5V

Ta=25°C
Pulsed

8

[A]

6

D

4

2

DRAIN CURRENT : I

0

0246810

1000

100

(on)[mΩ]

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10 100

VGS= 4.5V

VGS= 2.5V

VGS= 1.8V

VGS= 1.5V

VGS= 1.2V

DRAIN-SOURCE VOLTAGE : VDS[V]

VGS= 4.5V

Pulsed

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=25°C
Pulsed

100

10

[A]

D

DRAIN CURRENT : I

(on)[mΩ]

DS

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

Ta= 125°C

Ta= 75°C

1

Ta= 25°C

Ta= - 25°C

0.1

0.01

0.001

0 0.5 1 1.5

GATE-SOURCE VOLTAGE : VGS[V]

1000

VGS= 2.5V

Pulsed

100

10

1

0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

VDS= 10V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 1.8V

Pulsed

(on)[mΩ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= 1.5V

Pulsed

100

(on)[mΩ]

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

100

VDS= 10V

Pulsed

10

Ta= -25°C

1

0.1

0.01 0.1 1 10 100

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Fig.9 Forward Transfer Admittance
vs. Drain Current

Ta=25°C
Ta=75°C
Ta=125°C

3/5

2010.04 - Rev.A

RQ1C075UN

Data Sheet

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100

VGS=0V

Pulsed

[A]

s

10

1

0.1

SOURCE CURRENT : I

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage

5

[V]

GS

4

3

2

1

GATE-SOURCE VOLTAGE : V

0

0 5 10 15 20

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

Ta=25°C
VDD=10V

ID= 7.5A

RG=10Ω

Pulsed

50

40

(ON)[mΩ]

DS

30

20

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

GATE-SOURCE VOLTAGE : VGS[V]

Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

1000

CAPACITANCE : C [pF]

100

0.01 0.1 1 10 100

ID= 7.5A

ID= 3.7A

0510

Ta=25°C
f=1MHz
VGS=0V

C

rss

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

Ta=25°C
Pulsed

C

iss

C

oss

10000

t

f

t

r

1

0.01 0.1 1 10 100

DRAIN-CURRENT : ID[A]

Fig.12 Switching Characteristics

SWITCHING TIME : t [ns]

1000

100

10

Ta=25°C
VDD=10V

VGS=4.5V

t

d(off)

RG=10Ω

Pulsed

t

d(on)

4/5

2010.04 - Rev.A

RQ1C075UN

F

it

S

%

V
V

F

S

Data Sheet

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 Measurement circuits

V

GS

D.U.T.

R

G

ig.1-1 Switching time measurement circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate charge measurement circuit

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-2 Switching waveforms

V

G

D

I

V

D

R

L

V

GS

QgsQ

V

DD

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

5/5

2010.04 - Rev.A

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A