Datasheet RQ1C065UN Datasheet (ROHM)

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

1.5V Drive Nch MOSFET

(6)

(5)

(

4)

(7)(8)

RQ1C065UN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(1.5V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RQ1C065UN 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

20 V

10 V

6.5 A

26 A

1A

26 A

1.5 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a CERAMIC Board.

TSMT8

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : VB

∗2

∗1

(2)

1) (

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(3)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 83.3  C / W

* Each terminal mounted on a CERAMIC Board.

Symbol Limits Unit

*

1/5

2010.06 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RQ1C065UN

 Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

Forward transfer admittance l Yfs l6 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=±10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-1622 I

-1927 I

**

-2432 I

-2958 I

*

*

=6.5A, VGS=4.5V

D

=6.5A, VGS=2.5V

D

m

=3.2A, VGS=1.8V

D

=1.3A, VGS=1.5V

D

=6.5A, VDS=10V

D

- 870 - pF VDS=10V

- 190 - pF VGS=0V

- 85 - pF f=1MHz

-7-nsI

*

*

- 30 - ns VGS=4.5V

*

*

- 70 - ns RL=3.1

*

*

*

*

- 25 - ns RG=10

*

*

- 11 - nC ID=6.5A, VDD 10V

*

*

- 2.0 - nC VGS=4.5V RL=1.5

*

*

- 2.1 - nC RG=10

=3.2A, VDD 10V

D

ConditionsParameter

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

*

Forward Voltage V

*Pulsed

SD

- - 1.2 V Is=6.5A, VGS=0V

ConditionsParameter

2/5

2010.06 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RQ1C065UN

 Electrical characteristics curves

7

6

[A]

D

5

4

3

2

DRAIN CURRENT : I

1

0

0 0.2 0.4 0.6 0.8 1

1000

(on)[mΩ]

100

DS

10

VGS=10V

VGS=4.5V

VGS=2.5V

VGS= 1.8V

VGS= 1.5V

DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ)

Ta= 25°C
Pulsed

VGS= 1.0V

VGS= 1.5V

VGS= 1.8V

VGS= 2.5V

VGS= 4.5V

Ta=25°C
Pulsed

7

6

[A]

D

5

4

3

2

DRAIN CURRENT : I

1

0

1000

100

(on)[mΩ]

DS

10

VGS= 10V

VGS=4.5V

VGS=2.5V

VGS=1.8V

VGS=1.5V

VGS= 1.0V

0246810

DRAIN-SOURCE VOLTAGE : VDS[V]

VGS= 4.5V

Pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=25°C
Pulsed

100

VDS= 10V

Pulsed

10

[A]

D

DRAIN CURRENT : I

Ta= 125°C

Ta= 75°C

1

Ta= 25°C

Ta= - 25°C

0.1

0.01

0.001

0 0.5 1 1.5

GATE-SOURCE VOLTAGE : VGS[V]

Fig.3 Typical Transfer Characteristics

1000

VGS= 2.5V

Pulsed

(on)[mΩ]

100

DS

10

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)

1000

VGS= 1.8V

Pulsed

(on)[mΩ]

100

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)

1000

VGS= 1.5V

Pulsed

100

(on)[mΩ]

DS

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)

100

VDS= 10V

Pulsed

10

1

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

DRAIN-CURRENT : ID[A]

Fig.9 Forward Transfer Admittance
vs. Drain Current

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

3/5

2010.06 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RQ1C065UN

100

VGS=0V

Pulsed

10

1

0.1

REVERSE DRAIN CURRENT : Is [A]

0.01

0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage

5

Ta=25°C

[V]

VDD=10V

GS

4

ID= 4.5A

RG=10Ω

3

2

1

GATE-SOURCE VOLTAGE : V

0

0123456789101112131415

TOTAL GATE CHARGE : Qg [nC]

Fig.13 Dynamic Input Characteristics

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

100

ID= 6.5A

(ON)[mΩ]

DS

50

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0510

GATE-SOURCE VOLTAGE : VGS[V]

Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage

10000

Ta=25°C
f=1MHz
V

=0V

GS

1000

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : VDS[V]

ID= 3.3A

Crss

Coss

Fig.14 Typical Capacitance
vs. Drain-Source Voltage

Ta=25°C
Pulsed

Ciss

10000

td(off)

1000

100

td(on)

10

SWITCHING TIME : t [ns]

1

0.01 0.1 1 10

Fig.12 Switching Characteristics

t

f

DRAIN-CURRENT : ID[A]

Ta=25°C
VDD=10V

VGS=4.5V

RG=10Ω

t

r

4/5

2010.06 - Rev.A

Data Sheet

www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.

RQ1C065UN

F

it

S

%

V
V

F

S

 Measurement circuits

V

GS

D.U.T.

R

G

ig.1-1 Switching time measurement circu

V

GS

I

G(Const.)

R

G

ig.2-1 Gate charge measurement circuit

D.U.T.

Pulse width

D

I

V

D

R

L

V

DD

50%

10%

GS
DS

10% 10%

t

d(on)

t

on

90%

50%

90% 90

t

d(off)

t

r

t

off

t

f

Fig.1-2 Switching waveforms

V

G

D

I

V

D

R

L

V

GS

QgsQ

V

DD

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

5/5

2010.06 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel­controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.

http://www.rohm.com/contact/

R1010

A