ROHM RQ1C065UN Technical data

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©2010 ROHM Co., Ltd. All rights reserved.

1.5V Drive Nch MOSFET

(6)

(5)

(

4)

(7)(8)

RQ1C065UN

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(TSMT8).

3) Low voltage drive(1.5V drive).

 Application

Switching

 Packaging specifications  Inner circuit

Package Taping

Type

Code TR
Basic ordering unit (pieces) 3000

RQ1C065UN 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Power dissipation P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

D

*1

*1

*1

*1

*2

*2

20 V

10 V

6.5 A

26 A

1A

26 A

1.5 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a CERAMIC Board.

TSMT8

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

(8) (7) (5)(6)

(1) (2) (4)(3)

Abbreviated symbol : VB

∗2

∗1

(2)

1) (

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(3)

 Thermal resistance

Parameter

Channel to Ambient Rth (ch-a) 83.3  C / W

* Each terminal mounted on a CERAMIC Board.

Symbol Limits Unit

*

1/5

2010.06 - Rev.A

Data Sheet

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©2010 ROHM Co., Ltd. All rights reserved.

RQ1C065UN

 Electrical characteristics (Ta = 25C)

Symbol Min. Typ. Max. Unit

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V

Static drain-source on-state
resistance

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

Forward transfer admittance l Yfs l6 - - SI

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

--10 AVGS=±10V, VDS=0V

20 - - V ID=1mA, VGS=0V

--1AVDS=20V, VGS=0V

0.3 - 1.0 V VDS=10V, ID=1mA

-1622 I

-1927 I

**

-2432 I

-2958 I

*

*

=6.5A, VGS=4.5V

D

=6.5A, VGS=2.5V

D

m

=3.2A, VGS=1.8V

D

=1.3A, VGS=1.5V

D

=6.5A, VDS=10V

D

- 870 - pF VDS=10V

- 190 - pF VGS=0V

- 85 - pF f=1MHz

-7-nsI

*

*

- 30 - ns VGS=4.5V

*

*

- 70 - ns RL=3.1

*

*

*

*

- 25 - ns RG=10

*

*

- 11 - nC ID=6.5A, VDD 10V

*

*

- 2.0 - nC VGS=4.5V RL=1.5

*

*

- 2.1 - nC RG=10

=3.2A, VDD 10V

D

ConditionsParameter

Body diode characteristics (Source-Drain) (Ta = 25C)

Symbol Min. Typ. Max. Unit

*

Forward Voltage V

*Pulsed

SD

- - 1.2 V Is=6.5A, VGS=0V

ConditionsParameter

2/5

2010.06 - Rev.A