Datasheet RQ1A070ZP Datasheet (ROHM)

C

s

1.5V Drive Pch MOSFET

RQ1A070ZP

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) Low voltage drive. (1.5 V)

3) High power package.

zApplications
Switching

zPackaging specifications zInner circuit

Type

RQ1A070ZP

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1
∗2

−55 to +150

Limits

−12
±10

±7

±28

−1

−28

1.5

150

Unit

VV
VV
AI
AI
AI
AI

W

°CTch
°CTstg

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board.

Symbol Limits Unit

∗

Rth(ch-a)

83.3

°C/W

TSMT8

Abbreviated symbol : YJ

(8) (7)

∗2

(1) (2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(8) (7) (5)(6)

(1) (2) (4)(3)

(6) (5)

∗1

(3) (4)

Each lead has same dimension

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

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2009.08 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗ Pulsed

Min. Typ. Max.

I

GSS

−−±10 µAVGS=±10V, VDS=0V

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

−−−1 µAV

−0.3 −−1.0 V V

− 812 I

− 11 16 mΩ

∗

DS (on)

− 19 38 I

∗

12 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 7400 − pF V

iss

− 800

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

750

35

−

95

−

310

−

190

−

58

−

11

−

10

−−nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −7A, VGS=0VForward voltage

− pF V

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

− nC

Unit

mΩ

DS
DS

D

I

D

Conditions

= −12V, VGS=0V

= −6V, ID= −1mA
= −7A, VGS= −4.5V
= −3.5A, VGS= −2.5V

mΩ− 15 23 ID= −3.5A, VGS= −1.8V
mΩ

= −1.4A, VGS= −1.5V

D

= −6V, ID= −7A

DS

= −6V

DS

=0V

GS

V

DD

−6V

ID= −3.5A

GS

= −4.5V

V
R

L

1.7Ω

G

=10Ω

R
V

−6V

DD

I

=

−7A

D

V

=

−4.5V

GS

RL 0.86Ω / RG=10Ω

Unit

Conditions

Data Sheet RQ1A070ZP

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2009.08 - Rev.A

zElectrical characteristics curves

10

8

[A]

D

6

4

DRAIN CURRENT : -I

2

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -V

Fi g.1 T ypic al output char acter isti cs(Ⅰ)

VGS= - 10V
V

= -4.5V

GS

= -2.5V

V

GS

V

= -1.8V

GS

= -1.5V

V

GS

VGS=- 1.2V

VGS=-1.0V

DS

Ta=25
Pulsed

[V]

℃

10

VGS= -4.5V
V

[A]

D

8

6

4

DRAIN CURRENT : -I

2

0

= -2.5V

GS

V

= -1.8V

GS

= -1.5V

V

GS

VGS= -1.3V

0246810

DRAIN-SOURCE VOLTAGE : -VDS[V]

Fi g.2 Typic al output cha racter isti cs(Ⅱ)

Ta=25
Pulsed

VGS= -1.2V

VGS= -1.0V

Data Sheet RQ1A070ZP

10

℃

VDS= -6V
Pulsed

[A]

D

Ta= 125

1

℃

Ta=75

℃

Ta=25

℃

Ta= -25

℃

00.511.5

GATE- SOURC E VOLTAGE : -VGS[V]

Fi g.3 T ypic al Tr ansfer C haract eris tics

DRAIN CURRENT : -I

0.001

0.1

0.01

1000

Ta=25

℃

Pulsed

]

Ω

100

(on) [m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN CURRENT : -ID[A]

Fi g.4 Stat ic D rain- Source O n-State

Resis tance vs. Drain C urrent(Ⅰ)

1000

VGS= -1.8V
Pulsed

]

Ω

(on)[m

100

DS

10

RESISTANCE : R

STATI C DRAIN -SOU RCE ON- STATE

1

0.1 1 10

DRAIN CURRENT : -I

Fi g.7 Stat ic D rain- Source O n-State

Resis tance vs. Drain C urrent(Ⅳ)

VGS= -1.5V
V

= -1.8V

GS

V

= -2.5V

GS

= -4.5V

V

GS

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

[A]

D

1000

VGS= -4.5V
Pulsed

]

Ω

(on)[m

100

DS

10

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

1

0.1 1 10

DRAIN CURRENT : -ID[A]

Fi g.5 Stat ic Dr ain- Source On -State

Resis tance vs. Drain C urrent(Ⅱ)

1000

VGS= -1.5V
Pulsed

]

Ω

100

(on)[m

DS

10

RESISTANCE : R

STATI C DRAIN -SOU RCE ON- STATE

1

0.1 1 10

DRAIN CURRENT : -ID[A]

Fi g.8 Stat ic Dr ain- Source On -State

Res istance vs. D rain C urr ent(Ⅳ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

1000

VGS= -2.5V
Pulsed

100

(on) [mΩ]

DS

10

RESISTANCE R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN CURRENT : -I

Fi g.6 Stat ic D rain- Source O n-State

Resis tance vs. Drain C urrent(Ⅲ)

100

VDS= -6V
Pulsed

10

: |Yfs|[S]

FORWARD TRANSFER ADMITTANCE

1

0.1 1 10

DRAIN CURRENT : -ID[A]

Fi g.9 F orward T ransfer Admittanc e

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

vs. Dr ain C urrent

[A]

D

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2009.08 - Rev.A

F

it

%

V

V

F

S

Fig.2-2 Gate Charge Waveform

V

Data Sheet RQ1A070ZP

10

Ta= 125°C

Ta=75°C
Ta=25°C

1

Ta=-25°C

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01
0 0.2 0.4 0.6 0.8 1 1.2

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.10 Reverse Drain Current
vs. Sourse-Dr ain Voltag e

5

Ta=25

℃

= -6V

V

DD

[V]

I

= -7A

GS

4

D

=10Ω

R

G

Pulsed

3

2

1

GATE-SOURCE VOLTAGE : -V

0

0 10203040506070

TOTAL GATE CHAR GE : Qg [nC]

Fi g.13 D ynamic Input Chara cteri stic s

Measurement circuits

z

VGS

RG

D

I

D.U.T.

VGS=0V
Pulsed

RL

VDD

50

]

40

Ω

(ON)[m

30

DS

20

10

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOU RCE VOLTAGE : -VGS[V]

Fi g.11 St atic D rain- Sourc e On-Stat e
Resistance vs. Gate Source Voltage

100000

10000

1000

CAPACITANCE : C [pF]

100

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

VDS

ID= -7.0A

ID= -3.5A

Ciss

Crss

Coss

Fi g.14 T ypic al Capaci tance
vs. Dr ain-Source Voltage

GS

10%

50%

DS

t

d(on)

t

on

Ta=25°C
Pulsed

Ta=25

f=1MHz

V

[V]

DS

=0V

GS

10000

1000

100

SWITC HING TIME : t [ns]

10

0.01 0.1 1 10

℃

Pulse width

50%

90%

10% 10

90% 90%

t

t

d(off)

r

t

f

t

off

td(o ff)

tr

Fig.12 Switching　Characteristics

tf

td(on)

DRAIN-CURRENT : -ID[A]

Ta=25
V

DD

V

GS

R

G

Pulsed

℃

= -6V
= -4.5V
=10Ω

ig.1-1 Switching Time Measurement Circu

I

G(Const.)

R

ig.2-1 Gate Charge Measurement Circuit

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

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D

V

GS

D.U.T.

G

I

V

D

R

L

V

DD

Fig.1-2 Switching Waveforms

V

G

g

Q

GS

Q

gsQgd

Charge

2009.08 - Rev.A

Notes

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

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