ROHM RQ1A070ZP Technical data
C
s
1.5V Drive Pch MOSFET
RQ1A070ZP
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zApplications
Switching
zPackaging specifications zInner circuit
Type
RQ1A070ZP
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
∗2
−55 to +150
Limits
−12
±10
±7
±28
−1
−28
1.5
150
Unit
VV
VV
AI
AI
AI
AI
W
°CTch
°CTstg
zThermal resistance
Parameter
hannel to ambient
∗ Mounted on a ceramic board.
Symbol Limits Unit
∗
Rth(ch-a)
83.3
°C/W
TSMT8
Abbreviated symbol : YJ
(8) (7)
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(8) (7) (5)(6)
(1) (2) (4)(3)
(6) (5)
∗1
(3) (4)
Each lead has same dimension
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.08 - Rev.A
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min. Typ. Max.
I
GSS
−−±10 µAVGS=±10V, VDS=0V
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 812 I
− 11 16 mΩ
∗
DS (on)
− 19 38 I
∗
12 −−SV
Y
fs
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 7400 − pF V
iss
− 800
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
750
35
−
95
−
310
−
190
−
58
−
11
−
10
−−nC
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −7A, VGS=0VForward voltage
− pF V
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC
Unit
mΩ
DS
DS
D
I
D
Conditions
= −12V, VGS=0V
= −6V, ID= −1mA
= −7A, VGS= −4.5V
= −3.5A, VGS= −2.5V
mΩ− 15 23 ID= −3.5A, VGS= −1.8V
mΩ
= −1.4A, VGS= −1.5V
D
= −6V, ID= −7A
DS
= −6V
DS
=0V
GS
V
DD
−6V
ID= −3.5A
GS
= −4.5V
V
R
L
1.7Ω
G
=10Ω
R
V
−6V
DD
I
=
−7A
D
V
=
−4.5V
GS
RL 0.86Ω / RG=10Ω
Unit
Conditions
Data Sheet RQ1A070ZP
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.08 - Rev.A
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