Datasheet RQ1A060ZP Datasheet (ROHM)

C

1.5V Drive Pch MOSFET

RQ1A060ZP

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications zEquivalent circuit

Switching

zPackaging specifications

Type

RQ1A060ZP

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

±6

∗1

±24

−1

∗1

−24

∗2

1.5

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

83.3

TSMT8

(8) (7) (5)(6)

2.4

2.8

(1) (2) (4)(3)

0.65

Abbreviated symbol : YH

(7)(8)

∗2

(1) (4)

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

3.0

0.32

(6)

(5)

∗1

(3)

0.8

0.17

Each lead has same dimensions

(1) Sorce
(2) Sorce
(3) Sorce
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

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1/4

2009.05 - Rev.A

RQ1A060ZP

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗

Pulsed

Min.

I

GSS

Typ. Max.

−−±10 µAV

Unit

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

−−−1 µAVDS= −12V, VGS=0V

−0.3 −−1.0 V VDS= −6V, ID= −1mA

− 16 23 I

− 22 31 mΩ

∗

− 28 42 I

mΩ

ID= −3A, VGS= −2.5V
mΩ
mΩ− 39 78 ID= −1.2A, VGS= −1.5V

∗

Y

7.5 −−SV

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

V

Q

− 2800 − pF VDS= −6V

iss

− 340

oss

−

rss

∗

−

∗

t

r

−

∗

−

∗

t

−

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF VGS=0V

− pF f=1MHz

310

12

− ns

105

− ns

− ns

400
230

− ns

34

− nC

− nC

6.0

5.0

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −6A, VGS=0VForward voltage

V

ID= −3A

V

R

R

V

I

V

Unit

Conditions

=±10V, VDS=0V

GS

= −6A, VGS= −4.5V

D

= −3A, VGS= −1.8V

D

= −6V, ID= −6A

DS

DD

−6V

GS

= −4.5V

L

2Ω

G

=10Ω

DD

= −6A

D

GS

−6V

= −4.5V

R

L
G

R

Conditions

1Ω

=10Ω

Data Sheet

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2/4

2009.05 - Rev.A

RQ1A060ZP

zElectrical characteristic curves

6

5

[A]

D

4

3

2

DRAIN CURRENT : -I

1

0

0 0.2 0.4 0. 6 0.8 1

DR AIN-SOU RCE VOLTAG E : -VDS[V] DRAIN -SOURC E VOLTAGE : -VDS[V]

Fi g.1 Typic al Output Char acteri stics (Ⅰ) Fig .2 Typical Output Character istics(Ⅱ)

VGS= -10V

= -4.5V

V

GS

V

= -2.5V

GS

V

= -1.8V

GS

V

= -1.5V

GS

VGS= -1.2V

Ta=25°C
Pulsed

6

5

[A]

D

4

3

2

DRAIN CURRENT : -I

1

0

0246810

VGS= -10V
V

= -1.8V

GS

V

= -1.5V

GS

VGS= -1.2V

Ta=25°C
Pulsed

10

VDS= -6V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C
Ta= - 25°C

0.1

DRAIN CURRENT : -I

0.01

0.001

00.511.52

GATE-SOURCE VOLTAGE : -VGS[V]

Fi g.3 Typic al Tr ansfer Char acteri stics

Data Sheet

1000

Ta=25°C
Pulsed

]

Ω

100

(ON)[m

DS

10

RESISTANCE : R

STATIC D RAIN-SOU RCE ON- STATE

1

0.1 1 10

DRAIN-CURRENT : -I

Fi g.4 St atic D rai n-Sourc e On-St ate

Resi stance vs. Dr ain Cur rent(Ⅰ)

1000

VGS= -1.8V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN-CURRENT : -ID[A]

Fi g.7 Stati c Dr ain-Sour ce On-State

Resi stance vs. Dr ain Current(Ⅳ)

VGS= -1.5V
V

= -1.8V

GS

V

= -2.5V

GS

= -4.5V

V

GS

[A]

D

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

1000

VGS= -4.5V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.5 Stati c Dr ain-Sour ce On-State

Resi stance vs. Dr ain Current(Ⅱ)

1000

VGS= -1.5V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1 1 10

DRAIN-CURRENT : -I

Fig .8 Static Dr ain- Source On-State

Resi stance vs. Dr ain Current(Ⅳ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

1000

VGS= -2.5V
Pulsed

]

Ω

100

(ON)[m

DS

10

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

1

0.1110

DRAIN-CURRENT : -ID[A]

Fig .6 Static Dr ain- Source On-State

Resi stance vs. Dr ain Current(Ⅲ)

100

VDS= -6V
Pulsed

10

FOR WARD TRANSF ER ADM ITTANC E : |Yfs| [S]

1

0.1110

DRAIN-CURRENT : -ID[A]

Fi g.9 For ward Trans fer Admittanc e
vs. Drai n Cur rent

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C

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3/4

2009.05 - Rev.A

F

it

%

V

V

F

it

S

Fig.2-2 Gate Charge Waveforms

V

RQ1A060ZP

10

VGS=0V
Pulsed

Ta= 125°C

1

Ta= 75°C
Ta= 25°C
Ta=-25°C

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.20.40.60.811.2

SOURCE-DRAIN VOLTAGE : -VSD [V]

Fig.10 Reverse Drain Current
vs. Sourse-Dr ain Voltage

5

[V]

4

GS

3

2

1

GATE-SOURCE VOLTAGE : -V

0

010203040

TOTAL GATE CHARGE : Qg [nC]

Fi g.13 D ynamic Input Char acter isti cs Fi g.14 T ypical C apacit ance

zMeasurement circuits

Ta= 25°C

= -6V

V

DD

= -6.0A

I

D

=10Ω

R

G

Pulsed

V

GS

100

80

]

Ω

60

(ON)[m

DS

40

20

ID= -3.0A

RESISTANCE : R

STATIC DRAIN- SOURCE ON-STATE

0

0246810

GATE-SO URCE VOLTAGE : - VGS[V]

Fi g.11 Stat ic Dr ain- Source On -State
Resistance vs. Gate Source Voltage

10000

1000

CAPACITANCE : C [pF]

Ta=25°C
f=1M Hz

=0V

V

GS

100

0.01 0. 1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

D

I

R

L

ID= -6.0A

Coss

Crss

vs. Dr ain-Source Voltage

V

DS

Ciss

Ta=25°C
Pulsed

[V]

DS

D.U.T.

R

G

V

DD

10000

1000

100

10

SWITC HING TIME : t [ns]

GS

DS

t

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.12 Swi tching Char acter isti cs

10%

50%

t

d(on)

t

on

Ta=25°C VDD= -6V

=- 4.5V RG=10Ω

V

td(off)

r

GS

Pulsed

t

f

td(on)

Pulse Width

50%

90%

10% 10

90% 90%

t

t

d(off)

r

t

off

Data Sheet

t

r

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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ig.1-1 Switching Time Measurement Circu

D

I

G(Const.)

V

GS

D.U.T.

R

G

I

V

R

L

V

DD

ig.2-1 Gate Charge Measurement Circu

D

4/4

Fig.1-2 Switching Waveforms

V

G

g

Q

GS

Q

gs

Q

gd

Charge

2009.05 - Rev.A

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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