ROHM RQ1A060ZP Technical data

C

1.5V Drive Pch MOSFET

RQ1A060ZP

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low on-resistance.

2) High power package.

3) Low voltage drive. (1.5V)

zApplications zEquivalent circuit

Switching

zPackaging specifications

Type

RQ1A060ZP

Package
Code
Basic ordering unit (pieces)

Taping

TR

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

−12
±10

±6

∗1

±24

−1

∗1

−24

∗2

1.5

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ Mounted on a ceramic board.

Symbol Limits Unit

Rth(ch-a)

∗

83.3

TSMT8

(8) (7) (5)(6)

2.4

2.8

(1) (2) (4)(3)

0.65

Abbreviated symbol : YH

(7)(8)

∗2

(1) (4)

(2)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

VV
VV
AI
AI
AI
AI

WP

°CTch
°CTstg

°C / W

3.0

0.32

(6)

(5)

∗1

(3)

0.8

0.17

Each lead has same dimensions

(1) Sorce
(2) Sorce
(3) Sorce
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain

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2009.05 - Rev.A

RQ1A060ZP

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗

Pulsed

Min.

I

GSS

Typ. Max.

−−±10 µAV

Unit

−12 −−VID= −1mA, VGS=0V

I

DSS

GS (th)

DS (on)

−−−1 µAVDS= −12V, VGS=0V

−0.3 −−1.0 V VDS= −6V, ID= −1mA

− 16 23 I

− 22 31 mΩ

∗

− 28 42 I

mΩ

ID= −3A, VGS= −2.5V
mΩ
mΩ− 39 78 ID= −1.2A, VGS= −1.5V

∗

Y

7.5 −−SV

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

V

Q

− 2800 − pF VDS= −6V

iss

− 340

oss

−

rss

∗

−

∗

t

r

−

∗

−

∗

t

−

f

∗

−

g

∗

−

gs

∗

−−nC

gd

− pF VGS=0V

− pF f=1MHz

310

12

− ns

105

− ns

− ns

400
230

− ns

34

− nC

− nC

6.0

5.0

Min. Typ. Max.

∗

SD

−−−1.2 V IS= −6A, VGS=0VForward voltage

V

ID= −3A

V

R

R

V

I

V

Unit

Conditions

=±10V, VDS=0V

GS

= −6A, VGS= −4.5V

D

= −3A, VGS= −1.8V

D

= −6V, ID= −6A

DS

DD

−6V

GS

= −4.5V

L

2Ω

G

=10Ω

DD

= −6A

D

GS

−6V

= −4.5V

R

L
G

R

Conditions

1Ω

=10Ω

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.05 - Rev.A