ROHM RPT-37PB3F Technical data

Phototransistor, top view type

RPT-37PB3F

The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect
from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
It is possible to distinguish the polarity by the shape of ramp type.

Applications Dimensions (Units : mm)
Optical control equipment
Receiver for sensors

Features

1) High sensitivity.

2) Almost no effect from stray light.

Absolute maximum ratings (Ta = 25C)

Parameter Symbol
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature

V

CEO

V

ECO

C

I

P
Topr
Tstg

C

Electrical and optical characteristics (Ta = 25C)

Parameter Symbol
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time

V

I

CE(sat)

θ

I

CEO

λ

1 / 2

tr·t

Min.

C

2.0

−

P

−

−

−

f

−

Limits

32

5

30

150

−25~+85

−30~+85

Typ.

−

−

800

−

±36

10

Max.

−

0.5

−

0.4

−

−

Unit

mA V

μA

nm

V

deg

μs

φ3.8±0.3

4−0.6

2− 0.5

1

(2.5)

Unit

V
V

mA

mW

°C
°C

CE

=5V, E=500L

VCE=10V(Black box)

C

=1mA, E=500L

I

CC

=5V, IC=1mA, RL=100Ω

V

φ3.1±0.2

1.3Max.1

2

2.5±1

Notes :

1. Unspecfied tolerance shall be ±0.2.

2. Measurement in the bracket are that of
lead pin at base the mold.

3. Dimension in parenthesis are show for
reference.

5.2±0.3Min.24

Internal connection diagram

1

Emitter Collector

2

Conditions

X

−

X

−

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2010.07 - Rev.A

0

0

1000

0

6

0

100

ambient temperature

0

COLLECTOR DISSIPATION : P

(mW)

1000

RELATIVE LUMINOUS INTENSITY (%)

9

Data Sheet RPT-37PB3F

Electrical and optical characteristic curves

1000

(nA)

100

CEO

10

1

DARK CURRENT : I

0.1

−25 0 25 50 75
AMBIENT TEMPERATURE : Ta

Fig.1 Dark current

vs. ambient temperature

10

8

(mA)

C

6

4

LIGHT CURRENT : I

2

0

0 2 4 6 8 101214

COLLECTOR−EMITTER VOLTAGE : V

Fig.4 Output characteristics

E=1000Lux

750Lux

500Lux

250Lux

VCE=10V

CE

=20V

V

CE

=30V

V

(°C)

CE (V)

10

1

500

(%)

C

200

100

50

20

RELATIVE LIGHT CURRENT : I

10

−25 75 10
AMBIENT TEMPERATURE : Ta

Fig.2 Relative output

vs. ambient temperature

(%)

C

75

50

25

RELATIVE SENSITIVITY : I

0

600400 800 1000 1200 160

OPTICAL WAVELENGTH : λ (nm)

Fig.5 Spectral sensitivity

8

VCE=5V

6

(mA)

C

4

2

LIGHT CURRENT : I

50250

(°C)

0 250 500 750 125

ILLUMINANCE : E (Lx)

1000

Fig.3 Light current vs. irradiance

160

C

120

80

40

0

−25 0 25 50 75 10
AMBIENT TEMPERATURE : Ta (°C)

Fig.6 Collector dissipation vs.

(μs)

r

100

10

RESPONSE TIME : t

1

0.1 110
COLLECTOR CURRENT : I

Fig.7 Response time vs.

collector current

Ta=25°C
VCE=5V

RL=1kΩ

RL=500Ω

RL=100Ω

C

(mA)

10°

20°

30°

40°

50°

60°

70°

80°

0°

100 80 60 40 20

RELATIVE LUMINOUS INTENSITY (%)

Fig.8 Directional pattern

10°0°20° 30° 40° 50° 60° 70° 80° 90°

0

ANGULAR DISPLACEMENT (deg)

100

80

60

40

20

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