RPR-220PC30N
Reflective photosensor (photoreflector)
Absolute maximum ratings (Ta=25°C)
)
LED
(
Input
Output
photo-
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
)
Emitter-collector voltage
Collector current
transistor
(
Collector power dissipation
Operating temperature
Storage temperature
IF
VR
PD
VCEO
VECO
C
I
PC
Topr
Tstg
Electrical and optical characteristics (Ta=25°C)
Limits
25
5
100
30
4.5
30
80
−25 to +85
−30 to +85
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Applications
Printers
MFP (Multi-function Printer)
Features
1) A plastic lens is used for high sensitivity.
2) A built-in visible light filter minimizes the
influence of stray light.
3) Lightweight and compact.
V
IR
ICEO
λ
IC
tr tf
tr tf
λ
Min.
−
F
−
−
P
−
0.08
−
−
λ
P
−
−
P
−
Parameter Symbol
Forward voltage
Reverse current
Input
charac-
teristics
Dark current
Peak sensitivity wavelength
Output
charac-
teristics
Collector current
Collector-emitter saturation
voltage
Transfer
charac-
teristics
VCE(sat)
Response time
Peak light emitting wavelength
Light
emitter
diode
Response time
Maximum sensitivity wavelength
Photo
transistor
∗ Reflector object : Standard white paper. (Reflection ratio = 90%)
Electrical and optical characteristics curves
100
10
RELATIVE COLLECTOR CURRENT : IC (%)
1
0 5 10 15 20
DISTANCE : d
Fig.1 Relative output vs. distance
(mm)
Typ.
Max.
3.5
3.8
−
100
−
10
800
−
−
0.8
0.1
0.3
10
−
470
−
10
−
800
−
30
25
F (mA)
20
15
10
5
FORWARD CURRENT : I
0
-
40 20 40 60 80 100
Unit
F=20mA
VI
R=5V
μA
V
V
μA
CE=10V
nm
CE=2V, IF=10mA
mA
V
F=20mA, IC=0.1mA
I
V
V
CE=10V, IF=20mA, RL=100Ω
μs
IF=20mA
nm
∗ Non-coherent Infrared light emitting diode used.
VCC=5V, IC=1mA, RL=100Ω
μs
∗ This product is not designed to be protected against electromagnetic wave.
nm
0-20
AMBIENT TEMPERATURE : Ta (°C)
Fig.2 Forward current vs.
ambient temperature
Conditions
−
−
Reflector
∗
∗
∗
25
20
15
10
5
FORWARD CURRENT : IF (mA)
0
012345
FORWARD VOLTAGE : VF (V)
Fig.3 Forward current vs.
forward voltage
Reflective
photointerrupter
d = 6mm
120
110
PD
D/PC (mW)
100
90
80
C
P
70
60
50
40
30
20
10
0
-
40
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : P
Fig.4 Power dissipation / collector power
0-20
AMBIENT TEMPERATURE : Ta (°C)
dissipation vs. ambient temperature
120
100
80
60
40
20
RELATIVE FORWARD VOLTAGE : VF (%)
0
10080604020
−10−20−30 0 10 20 40 6030 50 70 80 90
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative output vs. ambient
temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
COLLECTOR CURRENT : IC (mA)
0.1
0
0 5 10 15 20 25
FORWARD CURRENT : I
Fig.6 Collector current vs.
forward current
F(mA)
Dimensions (Unit : mm)
6.5
2.95±0.5
4.9
6.4
2.8
(2.8)
2.8
Through hole
2.2
φ
2-
2.5
4-φ1.0
0.35
1.4
4-0.6
4- 0.5±0.1
(2.5)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
COLLECTOR CURRENT : IC (mA)
0
012345678910
COLLECTOR-EMITTER VOLTAGE : VCE (V)
IF=20mA
IF=15mA
IF=10mA
IF=5mA
Fig.7 Output characteristics
Anode
Cathode
10000
1000
DARK CURRENT : ICEO (μA)
0.01
100
10
1
0.1
VCE=30V
20V
10V
−50 −25 0 25 50 75 100
AMBIENT TEMPERATURE : Ta (°C)
Fig.8 Dark current vs. ambient
temperature
Collector
Emitter
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
2010.06 Rev.A