ROHM RPI-441C1 Technical data
RPI-441C1
Photointerrupter, Small type
Absolute maximum ratings (Ta=25°C)
)
LED
(
Input
Output
photo-
Input
charac-
Output
charac-
Transfer
charac-
Infrared
light
emitter
Photo
transistor
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
)
Emitter-collector voltage
Collector current
transistor
(
Collector power dissipation
Operating temperature
Storage temperature
IF
VR
PD
VCEO
VECO
I
C
PC
Topr
Tstg
Electrical and optical characteristics (Ta=25°C)
V
IR
ICEO
λ
IC
tr tf
fC
tr tf
λ
Min.
−
F
−
−
−
P
0.2
−
−
− 1 − MHz
λ
P
− 950 −
P
−
Parameter Symbol
Forward voltage
Reverse current
teristics
Dark current
Peak sensitivity wavelength
teristics
Collector current
Collector-emitter saturation
voltage
teristics
VCE(sat)
Response time
Cut-off frequency
Peak light emitting wavelength
diode
Response time − 10 −
Maximum sensitivity wavelength
Limits
50
5
80
30
4.5
30
80
−25 to +85
−30 to +85
Max.
Typ.
1.3
−
−
800
0.55
−
10
800
1.6
10
0.5
0.4
−
−
−
−
Unit
mA
V
mW
Applications
Optical control equipment
Facsimiles
Printers
V
V
mA
mW
°C
°C
Unit
VI
V
μA
V
μA
F=50mA
R=5V
CE=10V
Conditions
nm
V
mA
CE=5V, IF=20mA
V
F=20mA, IC=0.1mA
I
CC=5V, IF=20mA, RL=100Ω
μs
V
IF=50mA
∗ Non-coherent Infrared light emitting diode used.
nm
VCC=5V, IC=1mA, RL=100Ω
μs
∗ This product is not designed to be protected against electromagnetic wave.
nm
Features
1) Compact with a 4mm gap.
2) High precision position detection
(slit width of 0.5mm).
3) Minimal influence from stray light.
4) Low collector-emitter voltage.
−
−
Electrical and optical characteristics curves
)
%
100
75
50
25
d
RELATIVE COLLECTOR CURRENT : Ic (
0
0 3.01.0 2.0
DISTANCE : d (mm)
Fig.1 Relative output current vs.
distance ( )
)
%
100
75
50
25
RELATIVE COLLECTOR CURRENT : Ic (
0
0 3.01.0 2.0
DISTANCE : d (mm)
Fig.4 Relative output current vs.
distance ( )
VCE=5V
F=20mA
I
Ta=25°C
VCE=5V
F=20mA
I
a=25°C
T
d
50
40
30
20
10
FORWARD CURRENT : IF (mA)
0
120
/ Pc (mW)
D
100
80
60
40
20
0
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : P
Fig.5 Power dissipation / collector power
−20 0 20 40 60 80 100
AMBIENT TEMPERATURE : Ta (°C)
Fig.2 Forward current falloff
PD
PC
−20 0 40 60 8020 100
AMBIENT TEMPERATURE : Ta (°C)
dissipation vs. ambient temperature
50
40
30
20
10
FORWARD CURRENT : IF (mA)
0
0.40 0.8 1.2 2.01.6
FORWARD VOLTAGE : VF (V)
Fig.3 Forward current vs. forward
voltage
)
%
100
50
RELATIVE COLLECTOR CURRENT : Ic (
0
0 −25 250 1007550
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Relative output vs. ambient
temperature
−25°C
0°C
25°C
50°C
75°C
External dimensions (Unit : mm)
4.2
5.2
3.6±0.5
0.5
4.2
Gap
3.25±0.1
8±0.5
4±0.5
3.6
(6.7)
A
C0.4
A
φ1.2
+0
-0.1
1.2
Optical axis center
4-0.2
Through hole
Cross-section A-A
(2.4)
1.2
Cathode
(2.5)
2.5
Collector
C0.6
4-0.5
2.6
6.7
4-φ0.8
φ1.4
2.0
1.0
COLLECTOR CURRENT : Ic (mA)
0
0403010 20 50
FORWARD CURRENT : IF (mA)
Fig.7 Collector current vs.
forward current
2.5
2
1.5
1
0.5
COLLECTOR CURRENT : Ic (mA)
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
4861020
IF=50mA
40mA
30mA
20mA
10mA
Anode
100
RL=1kΩ
10
RESPONSE TIME : t (μs)
1
COLLECTOR CURRENT : Ic (mA)
Fig.8 Response time vs.
VCCInput
td :
Delay time
Rise time (time for output current to rise
tr :
from 10% to 90% of peak current)
tf :
Fall time (time for output current to fall
from 90% to 10% of peak current)
RL=500Ω
RL=100Ω
collector current
Input
Output
RL
Output
td
tr
Emitter
100.1 1
90%
10%
tf
Notes:
1. Unspecified tolerance
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
1000
100
VR=10V
10
1
DARK CURRENT : ID (nA)
0.1
0 25 50 75 100−25
AMBIENT TEMPERATURE : Ta (°C)
Fig.9 Dark current vs.
ambient temperature
VR=20V
VR=30V
Fig.10 Output characteristics
Fig.11 Response time measurement circuit
2012.10.23 Rev.B
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