ROHM RN739D, RN739F Datasheet
Diodes
PIN diode
RN739F / RN739D
Applications
!!!!
VHF / UHF band variable attenuators and AGC
Features
!!!!
1) Multiple diodes in one small surface mount package.
(UMD3, SMD3)
2) Low high-frequency forward resistance (r
capacitance (C
T
).
3) High reliability.
Construction
!!!!
Silicon diffusion junction
Circuit
!!!!
F
) / low
External dimensions
!!!!
RN739F
2.0±0.2
1.3±0.1
0.650.65
5 F
0.3±0.1
(All pins have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
RN739D
2.9±0.2
1.9±0.2
0.95 0.95
0.4
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
RN739F / RN739D
(Units : mm)
0.9±0.1
0.3 0.6
0.15
1.1
+0.1
−0.06
0~0.1
0.1Min.
+0.2
−0.1
0.8±0.1
2.1±0.1
1.25±0.1
0.15±0.05
D 5 F
+0.2
−0.1
2.8±0.2
1.6
+0.1
−0.05
(All pins have the same dimensions)
0~0.1
0.3~0.6
Absolute maximum ratings
!!!!
(Ta = 25°C)
Parameter Symbol Limits Unit
DC reverse voltage
DC forward current
Power dissipation 100 mW
Junction temperature 125 °C
Storage temperature
Electrical characteristics
!!!!
V
R
I
F
Pd
Tj
Tstg °C
(Ta = 25°C)
50 V
50 mA
−55~+125
Parameter Symbol Min. Typ. Max. Unit Conditions
F
Forward voltage
Reverse current I
Capacitance between terminals −−0.4 pF
Forward operating resistance
V
R
T
C
F
r
−−1.0 V
−−100 nA
−−7 Ω IF=10mA, f=100MHz
I
F
=50mA
V
R
=50V
R
=35V, f=1MHz
V
Diodes
Electrical characteristic curves
!!!!
100m
(A)
F
10m
1m
FORWARD CURRENT : I
0 0.5 1.0
Fig.1 Forward characteristics
125°C
75°C
FORWARD VOLTAGE : VF (V)
25°C
−25°C
(Ta = 25°C)
10µ
100n
(A)
R
10n
100p
10p
REVERSE CURRENT : I
1µ
1n
1p
0 10 20 30 40 50 60 70
REVERSE VOLTAGE : VR (V)
125°C
75°C
25°C
Fig.2 Reverse characteristics
RN739F / RN739D
1.0
(pF)
T
0.7
0.5
0.4
0.3
0.2
CAPACITANCE BETWEEN TERMINAL : C
0.1
10 20 30
REVERSE VOLTAGE : V
Fig.3 Capacitance between
terminals characteristics 1
f=1MHz
f=10MHz
R
(V)
1.0
(pF)
T
0.7
0.5
VR=0V
0.4
0.3
V
R
=3V
0.2
CAPACITANCE BETWEEN TERMINAL : C
0.1
100 200 300 400 500 600
HIGH FREQUENCY : f (MHz)
Fig.4 Capacitance between
terminals characteristics 2
100
80
60
40
Io CURRENT (%)
20
(Ω)
F
DYNAMIC FORWARD RESISTANCE : r
f=1MHz
f=100MHz
100
10
1.0
0.1
FORWARD CURRENT : IF (mA)
f=10MHz
Fig.5 High frequency characteristics
1.0 10
20
(Ω)
F
F
=2mA
I
10
DYNAMIC FORWARD RESISTANCE : r
10 100 1000
FORWARD CURRENT : f (MHz)
Fig.6 Forward operating
resistance characteristics
0
0
25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig.7 Derating curve
(mounting on glass epoxy PCBs)
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