ROHM RN142G Technical data
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RN142G
Diodes
PIN diode
RN142G
zApplication
High frequency switching
zFeatu res
1) Ultra small mold type (VMD2)
2) High frequency resistance which is small and low
capacity.
zConstruction
Silicon epitaxial planer
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature
V
R
F
I
Tj 150 °C
Tstg −55∼+150 °C
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
F
Forward voltage
Reverse current
Capacitance between terminal
Foward resistance
∗ Please pay attention to static electricity when handling.
V
R
I
T
C
F
r
−−
−−
−−
−−
−−
zExternal dimensions (Units : mm)
0.6±0.05
CATHODE MARK
ROHM : VMD2
EIAJ :
JEDEC :
60 V
100 mA
1.0 V
0.1 µA
0.45 pF
3.0
2.0
Ω
Ω
IF=10mA
R
=60V
V
V
R
=1.0V, f=1.0MHz
I
F
=3mA, f=100MHz
F
=10mA, f=100MHz
I
0.27±0.03 0.13±0.03
K
1.0±0.05
1.4±0.05
0.5±0.05
1/2
RN142G
Diodes
zElectrical characteristic curves (T a=25°C)
100
150
°C
125
(mA)
F
10
1
FORWARD CURRENT : I
0.1
200 400 600 12001000800
°C
75
°C
FORWARD VOLTAGE : V
Fig.1 Forward caharacteristics
3.5
3
(Ω)
F
2.5
1.5
FOWARD RESISTANCE : R
0.5
f=100MHz
2
1
0
0
f=900MHz
f=1.8GHz
246810
FORWARD CURRENT : I
Fig.4 Forward resistance vs.
Forward current
−25
F
(mV)
F
(
25
mA)
10µ
1µ
(A)
R
°C
°C
100n
10n
1n
100p
REVERSE CURRENT : I
10p
0204060
REVERSE VOLTAGE : V
150
°C
125
°C
75
°C
25
°C
R
(V)
Fig.2 Reverse characteristics
0.5
pF)
(
T
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
CAPACITANCE BETWEEN TERMINALS : C
f=1MHz
f=1.8GHz
0
0246810
REVERSE VOLTAGE : V
f=900MHz
Fig.3 Capacitance vs.
Reverse voltage
R
(V)
2/2
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