ROHM RMW200N03 Technical data
Data Sheet
4.5V Drive Nch MOSFET
RMW200N03
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
PSOP8
Features
1) High Power package(PSOP8).
2) High-speed switching,Low On-resistance.
1pin mark
3) Low voltage drive(4.5V drive).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Type
Code TB
Basic ordering unit (pieces) 2500
RMW200N03
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits Unit
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Power dissipation P
DSS
GSS
D
DP
S
SP
D
30 V
20 V
20 A
*1
80 A
2.5 A
*1
*2
80 A
3.0 W
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 MOUNTED ON 40mm×40mm Cu BOARD
(8)
(1)
(6)
(7)
(2) (3) (4)
1.27
5.0
0.50.5
(5)
5.0
6.0
0.4
(8) (7) (6) (5)
∗2
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0~0.1
0.22
0.9
∗1
Thermal resistance
Parameter
Channel to Ambient Rth (ch-a) 41.7 C / W
* MOUNTED ON 40mm×40mm Cu BOARD
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Symbol Limits Unit
*
1/6
2011.03 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RMW200N03
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--10 AVGS=20V, VDS=0V
30 - - V ID=1mA, VGS=0V
--1AVDS=30V, VGS=0V
1.0 - 2.5 V VDS=10V, ID=1mA
- 3.0 4.2 I
*
- 4.0 5.6 I
*
*
l20 - - SID=20A, VDS=10V
- 1780 - pF VDS=15V
- 580 - pF VGS=0V
- 210 - pF f=1MHz
- 18 - ns ID=10A, VDD 15V
*
*
- 50 - ns VGS=10V
*
*
- 60 - ns RL=1.5
*
*
- 20 - ns RG=10
*
*
- 29 - nC ID=20A, VDD 15V
*
*
- 5.7 - nC VGS=10V
*
*
- 5.5 - nC
*
*
=20A, VGS=10V
D
m
=20A, VGS=4.5V
D
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage V
*Pulsed
Symbol Min. Typ. Max. Unit
*
SD
- - 1.2 V Is=2.5A, VGS=0V
Conditions
2/6
2011.03 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RMW200N03
Electrical characteristic curves (Ta=25C)
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1
VGS= 2.5V
VGS= 3.0V
V
GS
= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 3.5V
Ta=25°C
Pulsed
Fig.1 Typical Output Characteristics(Ⅰ)
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : VDS[V]
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10
VGS= 2.5V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 3.5V
VGS= 3.0V
Ta=25°C
Pulsed
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : I
D
[A]
0.001
0.01
0.1
1
10
100
0 1 2 3
VDS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.3 Typical Transfer Characteristics
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
1
10
0.1 1 10 100
.
VGS= 4.5V
VGS= 10V
Ta=25°C
Pulsed
1
10
100
0.1 1 10 100
VGS= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
0.1 1 10 100
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.03 - Rev.A
Loading...