RK7002A
Transistors
4V Drive Nch MOS FET
RK7002A
zStructure
Silicon N-channel MOS FET transistor
zFeatures
1) Low on-resistance.
2) High ESD
3) High-speed switching.
4) Low-voltage drive (4V).
5) Drive circuits can be simple.
6) Parallel use is easy.
zApplications
Switching
zPackaging specifications zEquivalent circuit
Taping
T116
3000
Type
RK7002A
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended land.
Symbol Limits Unit
V
V
I
I
P
Tch
DP
SP
DSS
GSS
D
I
S
D
1
∗
1
∗
2
∗
60 V
±20
±300I
200
0.8
200
150
Tstg °C −55 to +150
zThermal resistance
Parameter Symbol
Channel to ambient
∗
With each pin mounted on the recommended land.
Rth (ch-a)
Limits
∗
625
zExternal dimensions (Unit : mm)
SST3
(1)Source
(2)Gate
(3)Drain
2.9
0.4
(3)
(2)
(1)
0.95
0.95
1.9
Abbreviated symbol : RKS
0.95
0.45
2.4
1.3
0.15
Each lead has same dimensions
(2)
∗1
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗
A protection diode has been built in between the
gate and the source to protect against static
V
mA
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
A±1.2
mA
A
mW
°C
Unit
°C / W
0.2Min.
(3)
∗2
(1)
Source
(2)
Gate
(1)
(3)
Drain
Rev.A 1/4
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗ Pulsed
Symbol
V
(BR) DSS
V
R
DS (on)
l Yfs l
t
d (on)
t
d (off)
Q
Q
I
GSS
I
DSS
GS (th)
C
iss
oss
C
C
rss
∗
t
r
∗
t
f
Q
g
gs
gd
Min.
Typ.
−
−
60
−
−
−
1
−
0.7
−
∗
∗
∗
∗
∗
∗
∗
0.2
−
−
−
−
−
−
−
−
−
−
−
1.1 1.5
−
33
14
9
6
5
13
80
36
0.6
0.5
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Symbol
Forward voltage
∗Pulsed
Min. Typ. Max.
∗
V
SD
−−1.2 V IS=300mA, VGS=0V
Max.
±10
−
1
2.5
1.0
−
−
−
−
−
−
−
−
−
−
Unit
Unit
µA
V
GS
V
D
=1mA, VGS=0V
I
V
DS
µA
V
V
DS
D
=300mA, VGS=10V
I
Ω
D
=300mA, VGS=4V
I
S
VDS=10V, ID=300mA
pF
V
DS
VGS=0V
pF
f=1MHz
pF
ns
D
=150mA, V
I
ns
VGS=10V
RL=200Ω
ns
G
=10Ω
R
ns
nC
VDD 30V
V
GS
nC
D
=200mA
I
nC
Test Conditions
=±20V, VDS=0V
=60V, VGS=0V
=10V, ID=1mA
=10V
DD
30V
=10V
Conditions
RK7002A
Rev.A 2/4
Transistors
zElectrical characteristic curves
1.2
10V
1.0
8V
(A)
D
0.8
0.6
0.4
DRAIN CURRENT : I
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
DRAIN-SOURCE VOLTAGE : V
6V
4V
3.5V
VGS=3V
Ta=25°C
Pulsed
DS
(V)
Fig.1 Typical output characteristics
10
(Ω)
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Ta=125°C
75°C
25°C
1.0
0.1
−25°C
0.1
DRAIN CURRENT : I
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
D
VGS=
Pulsed
(A)
10V
2.0
(Ω)
1.5
DS (on)
1.0
0.5
ID=300mA
150mA
VGS=10V
Pulsed
1
VDS=
10V
Pulsed
(A)
D
0.1
0.01
DRAIN CURRENT : I
0.001
Ta=−25°C
125°C
1.00.50.0
GATE-SOURCE VOLTAGE : V
25°C
75°C
1.5 2.0 2.5 3.0 3.5
Fig.2 Typical transfer characteristics
10
(Ω)
DS (on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
1.00.01
Ta=125°C
75°C
25°C
−25°C
1.0
0.1
DRAIN CURRENT : I
Fig.5 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
1
(A)
DR
0.01
VGS=
0V
Pulsed
0.1
Ta=125°C
75°C
25°C
−25°C
RK7002A
2.5
(V)
GS (th)
2.0
1.5
1.0
0.5
GATE THRESHOLD VOLTAGE : V
4.0
GS
(V)
0.0
CHANNEL TEMPERATURE : Tch
50 75 100 12525
VDS=
ID=1mA
Pulsed
Fig.3 Gate threshold voltage
vs. channel temperature
4V
Pulsed
0.1
1.00.01
D
(A)
6
(Ω)
5
DS (on)
4
ID=300mA
3
150mA
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : V
Ta=25°C
Pulsed
7
VGS=
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
10
(A)
DR
1
VGS=10V
0.1
0.01
0V
10V
(°C)
GS
(V)
Ta=25°C
Pulsed
150−50 −25 0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.0
0
−25 50 75 100 125 150
−50
25
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
REVERSE DRAIN CURRENT : I
0.001
0.40.20.0
0.6 0.8 1.0
SOURCE-DRAIN VOLTAGE : V
Fig.8 Reverse drain current vs.
source-drain voltage ( Ι )
1.2
SD
(V)
REVERSE DRAIN CURRENT : I
0.001
0.40.20.0
0.6 0.8 1.0
SOURCE-DRAIN VOLTAGE : V
Fig.9 Reverse drain current vs.
source-drain voltage ( ΙΙ )
1.2
SD
(V)
Rev.A 3/4
Transistors
1
(S)
Ta=−25°C
0.1
0.01
0.001
FORWARD TRANSFER ADMITTANCE : |Yfs|
25°C
Ta=75°C
125°C
V
GS
D
Pulsed
(A)
0.001 0.01 0.1 1
DRAIN CURRENT : I
Fig.10 Forward transfer admittance
vs. drain current
=10V
100
(pF)
10
CAPACITANCE : C
Ta=25°C
f=1MHz
V
GS
=0V
1
0.01 0.1 101 100
DRAIN-SOURCE VOLTAGE : V
Fig.11 Typical capacitance
zSwitching characteristics measurement circuit
C
rss
DS
vs. drain-source voltage
Pulse width
RK7002A
1000
C
C
(V)
iss
oss
(ns)
100
10
SWITCHING TIME : t
1
1 10010 1000
td (on)
DRAIN CURRENT : I
td (off)
tr
Ta=25°C
DD
V
GS
V
tf
R
Pulsed
D
(A)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
G
=10Ω
=30V
=10V
V
GS
R
G
D.U.T.
D
I
V
DS
R
L
V
DD
Fig.13 Switching time measurement circuit
V
V
50%
GS
10%
t
d (on)
10%
90%
t
r
t
on
DS
Fig.14 Switching time waveforms
90%
t
d (off)
50%
10%
90%
t
f
t
off
Rev.A 4/4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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