ROHM RK7002A Schematic [ru]

RK7002A

Transistors

4V Drive Nch MOS FET

RK7002A

zStructure

Silicon N-channel MOS FET transistor

zFeatures

1) Low on-resistance.

2) High ESD

3) High-speed switching.

4) Low-voltage drive (4V).

5) Drive circuits can be simple.

6) Parallel use is easy.

zApplications

Switching

zPackaging specifications zEquivalent circuit

Taping

T116
3000

Type
RK7002A

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended land.

Symbol Limits Unit

V
V

I

I

P

Tch

DP

SP

DSS

GSS

D

I

S

D

1

∗

1

∗

2

∗

60 V

±20

±300I

200

0.8
200
150

Tstg °C −55 to +150

zThermal resistance

Parameter Symbol

Channel to ambient

∗

With each pin mounted on the recommended land.

Rth (ch-a)

Limits

∗

625

zExternal dimensions (Unit : mm)

SST3

(1)Source
(2)Gate
(3)Drain

2.9

0.4

(3)

(2)

(1)

0.95

0.95

1.9

Abbreviated symbol : RKS

0.95

0.45

2.4

1.3

0.15

Each lead has same dimensions

(2)

∗1

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗

A protection diode has been built in between the
gate and the source to protect against static

V

mA

electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.

A±1.2

mA

A

mW

°C

Unit

°C / W

0.2Min.

(3)

∗2

(1)

Source

(2)

Gate

(1)

(3)

Drain

Rev.A 1/4

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage

Drain-source on-state resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗ Pulsed

Symbol

V

(BR) DSS

V

R

DS (on)

l Yfs l

t

d (on)

t

d (off)

Q
Q

I

GSS

I

DSS

GS (th)

C

iss

oss

C
C

rss

∗

t

r

∗

t

f

Q

g

gs

gd

Min.

Typ.

−

−

60

−

−

−

1

−

0.7

−

∗

∗

∗

∗

∗

∗

∗

0.2

−

−

−

−

−

−

−

−

−

−

−

1.1 1.5

−

33
14

9
6

5
13
80

36

0.6

0.5

zBody diode characteristics (Source-Drain) (Ta=25°C)

Parameter Symbol

Forward voltage

∗Pulsed

Min. Typ. Max.

∗

V

SD

−−1.2 V IS=300mA, VGS=0V

Max.

±10

−

1

2.5

1.0

−

−

−

−

−

−

−

−

−

−

Unit

Unit

µA

V

GS

V

D

=1mA, VGS=0V

I
V

DS

µA

V

V

DS

D

=300mA, VGS=10V

I

Ω

D

=300mA, VGS=4V

I

S

VDS=10V, ID=300mA

pF

V

DS

VGS=0V

pF

f=1MHz

pF
ns

D

=150mA, V

I

ns

VGS=10V

RL=200Ω

ns

G

=10Ω

R

ns

nC

VDD 30V

V

GS

nC

D

=200mA

I

nC

Test Conditions

=±20V, VDS=0V

=60V, VGS=0V
=10V, ID=1mA

=10V

DD

30V

=10V

Conditions

RK7002A

Rev.A 2/4