ROHM RJP020N06 Technical data

RJP020N06

Transistors

2.5V Drive Nch MOS FET

RJP020N06

zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET

zFeatures

1) Low On-resistance.

2) Low voltage drive (2.5V drive).

zApplications

Switching

zPackaging specifications

Package

Type

RJP020N06

Code
Basic ordering unit (pieces)

zInner circuit

Taping

T100
1000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board

+

+

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

Limits Unit

60

±12
±2.0
±8.0

2.0

8.0

500

2

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

+

∗ When mounted on a 40 40 0.7mm ceramic board

+

Symbol Limits Unit

Rth(ch-a)

250

62.5

MPT3

(1)

(1)Gate

ain

(2)Dr

(3)Source

GATE

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : LS

DRAIN

∗1

SOURCE

4.5

1.6

(3)(2)

0.5

1.51.5

3.0

1.5

0.5

2.5

4.0

0.4

1.0

0.40.4

∗2

VV
VV
AI
AI
AI
AI

mW

∗2

W

°CTch
°CTstg

∗

°C/W
°C/W

1/2

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

V

(BR) DSS

V

R

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

Q

Q

gs

Q

gd

∗

∗

fs

∗

∗

∗

∗

f

∗

g

∗

∗

Min.−Typ. Max.

−±10 µAVGS= ±12V, VDS=0V

60 −−VID= 1mA, VGS=0V

−−1 µAV

0.8 − 1.5 V V

− 165 240 I

− 170 250 mΩ

− 210 300 I

1.5 −−SV

− 160 − pF V

− 5045− pF V

−

8

−

18

−

40

−

20

−

5

−

−

−−nC I

10 nC

1

2.5

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

Forward voltage

Min. Typ. Max.

V

SD

−−1.2 V IS= 2A, VGS=0V

Unit

= 60V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 4.5V

mΩ

D

= 2A, VGS= 4V

I

D

= 2A, VGS= 2.5V

mΩ

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC V

VDD 30V

ID= 1A
V

GS

= 4V

R

L

=30Ω

R

G

=10Ω

V

30V

DD

= 4V

GS

= 2A

D

Unit

RJP020N06

Conditions

Conditions

2/2