
4V Drive Nch MOSFET
RHP020N06
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
zApplications
Switching
zPackaging specifications and h
Package
Type
RHP020N06
Code
Basic ordering unit (pieces)
FE zInner circuit
Taping
T100
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
Symbol
DSS
GSS
D
DP
S
SP
P
D
∗1
∗1
Limits Unit
60
±20
±2
±8
2
8
500
2
150
−55 to +150
zThermal resistance
Parameter
hannel to ambient
∗ When mounted on a 40 40 0.7mm ceramic board
Symbol Limits Unit
Rth(ch-a)
250
62.5
MPT3
(1)
(1)Gate
(2)Drain
(3)Source
GATE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Abbreviated symbol : LR
DRAIN
∗1
SOURCE
VV
VV
AI
AI
AI
AI
mW
∗2
W
°CTch
°CTstg
°C/W
°C/W
∗
4.5
1.6
(3)(2)
0.5
1.51.5
3.0
1.5
0.5
2.5
4.0
0.4
1.0
0.40.4
∗2
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RHP020N06
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
Forward voltage
I
GSS
I
DSS
GS (th)
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
Q
gs
Q
gd
V
SD
∗
∗
∗
∗
∗
∗
∗
g
∗
∗
Min.−Typ. Max.
Unit
Conditions
−±10 µAVGS= ±20V, VDS=0V
60 −−VID= 1mA, VGS=0V
−−1 µAV
1.0 − 2.5 V V
− 150 200 I
mΩ
− 200 280 mΩ
− 240 340 I
mΩ
2.0 −−SV
− 140 − pF V
− 5040− pF V
−
−
−
−
−
−
−
−−nC I
Min. Typ. Max.
− pF f=1MHz
7
− ns
10
− ns
22
− ns
18
− ns
7
14 nC
1
− nC V
2
Unit
= 60V, VGS=0V
DS
= 10V, ID= 1mA
DS
= 2A, VGS= 10V
D
= 2A, VGS= 4.5V
I
D
= 2A, VGS= 4V
D
= 10V, ID= 2A
DS
= 10V
DS
=0V
GS
VDD 30V
ID= 1A
GS
= 10V
V
L
=30Ω
R
G
=10Ω
R
30V
V
DD
= 10V
GS
= 2A
D
Conditions
−−1.2 V IS= 2A, VGS=0V
Data Sheet
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RHP020N06
zElectrical characteristics curves
Data Sheet
10
8
[A]
D
6
VGS= 3.5V
V
4
V
2
DRAIN CURRENT : I
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics
10
Ta= 25°C
]
Ω
(on)[
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
Pulsed
1
DS
0.1
0.01
0.01 0.1 1 10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
VGS= 10V
V
GS
V
GS
V
GS
= 2.8V
GS
= 2.4V
GS
DRAIN-CURRENT : I
= 5.0V
= 4.5V
= 4.0V
VGS= 4.0V
V
V
= 4.5V
GS
= 10V
GS
[A]
D
Ta=25°C
Pulsed
10
8
[A]
D
6
4
DRAIN CURRENT : I
2
0
0246810
10
VGS= 10V
]
Pulsed
Ω
(on)[
1
DS
0.1
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0.01
0.01 0.1 1 10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
VGS= 10V
= 5.0V
V
GS
VGS= 4.5V
VGS= 4.0V
VGS= 3.0V
VGS= 2.4V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25 °C
DRAIN-CURRENT : ID[A]
Ta=25°C
Pulsed
10
VDS= 10V
Pulsed
[A]
1
D
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
DRAIN CURRENT : I
0.001
01234
GATE-SOURCE VOLTAGE : VGS[V]
10
VGS= 4.5V
]
Pulsed
Ω
(on)[
1
DS
0
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
VGS= 4.0V
]
Ω
Pulsed
(on)[
DS
1
0.1
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
0.01
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10
VDS= 10V
Pulsed
1
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
0.1
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta=125°C
10
VGS=0V
A
Pulsed
1
0.1
REVERSE DRAIN CURRENT : Is
0.01
00.511.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
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2009.03 - Rev.A

RHP020N06
Data Sheet
0.6
]
Ω
0.5
(ON)[
DS
0.4
0.3
0.2
RESISTANCE : R
0.1
STATIC DRAIN-SOURCE ON-STATE
CAPACITANCE : C [pF]
ID= 1.0A
0
0 5 10 15
GATE-SOURCE VOLTAGE : VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
Ta=25°C
f=1MHz
=0V
V
GS
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
ID= 2.0A
Crss
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Coss
Ta=25°C
Pulsed
Ciss
1000
td(off)
100
10
SWITCHING TIME : t [ns]
1
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fig.11 Switching Characteristi cs
100
Operation in this area is limited by R
(VGS= 10V)
10
(A)
D
1
0.1
0.01
DRAIN CURRENT : I
0.001
[V]
DS
DC operation
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Maximum Safe Operating Aera
t
f
td(on)
P
Ta=25°C
V
V
R
Pulsed
= 10ms
DD
GS
=10Ω
G
= 30V
=10V
t
r
DS(ON)
100us
1ms
9
8
[V]
GS
7
6
5
4
3
2
1
GATE-SOURCE VOLTAGE : V
0
0123456
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Ta=25°C
V
DD
I
= 2.0A
D
R
=10Ω
G
Pulsed
= 30V
10
1
0.1
RESISTANCE : r (t)
0.01
NORMARIZED TRANSIENT THERMA
0.001
0.001 0.01 0.1 1 10 100 1000
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a SERAMIC board>
PULSE WIDTH : Pw(s)
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Appendix
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-
sponsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-
sponsibility whatsoever for any dispute arising from the use of such technical information.
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or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-
tronic appliances and amusement devices).
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malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
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The Products are not designed or manufactured to be used with any equipment, device or system
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Notes
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Appendix-Rev4.1