ROHM RHP020N06 Technical data

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4V Drive Nch MOSFET

RHP020N06

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) High speed switching.

3) Wide SOA.

zApplications

Switching

zPackaging specifications and h

Package

Type

RHP020N06

Code
Basic ordering unit (pieces)

FE zInner circuit

Taping

T100
1000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board

Symbol

DSS
GSS

D

DP

S

SP

P

D

∗1

∗1

Limits Unit

60

±20

±2
±8

2
8

500

2

150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a 40 40 0.7mm ceramic board

Symbol Limits Unit

Rth(ch-a)

250

62.5

MPT3

(1)

(1)Gate
(2)Drain
(3)Source

GATE

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

Abbreviated symbol : LR

DRAIN

∗1

SOURCE

VV
VV
AI
AI
AI
AI

mW

∗2

W

°CTch
°CTstg

°C/W
°C/W

∗

4.5

1.6

(3)(2)

0.5

1.51.5

3.0

1.5

0.5

2.5

4.0

0.4

1.0

0.40.4

∗2

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2009 ROHM Co., Ltd. All rights reserved.

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2009.03 - Rev.A

RHP020N06

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol
Forward voltage

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

Min.−Typ. Max.

Unit

Conditions

−±10 µAVGS= ±20V, VDS=0V

60 −−VID= 1mA, VGS=0V

−−1 µAV

1.0 − 2.5 V V

− 150 200 I

mΩ

− 200 280 mΩ

− 240 340 I

mΩ

2.0 −−SV

− 140 − pF V

− 5040− pF V

−

−

−

−

−

−

−

−−nC I

Min. Typ. Max.

− pF f=1MHz

7

− ns

10

− ns

22

− ns

18

− ns

7

14 nC

1

− nC V

2

Unit

= 60V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 2A, VGS= 10V

D

= 2A, VGS= 4.5V

I

D

= 2A, VGS= 4V

D

= 10V, ID= 2A

DS

= 10V

DS

=0V

GS

VDD 30V

ID= 1A

GS

= 10V

V

L

=30Ω

R

G

=10Ω

R

30V

V

DD

= 10V

GS

= 2A

D

Conditions

−−1.2 V IS= 2A, VGS=0V

Data Sheet

www.rohm.com

c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.03 - Rev.A