ROHM RHP020N06 Technical data
4V Drive Nch MOSFET
RHP020N06
zStructure
Silicon N-channel MOSFET
zFeatures
1)Low On-resistance.
2)High speed switching.
3)Wide SOA.
zApplications
Switching
zPackaging specifications and hFE
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Package |
Taping |
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Type |
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Code |
T100 |
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Basic ordering unit (pieces) |
1000 |
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RHP020N06 |
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zDimensions (Unit : mm)
MPT3
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4.5 |
0.5 |
1.5 |
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1.6 |
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2.5 |
4.0 |
(1) |
(2) |
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(3) |
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1.0 |
0.4 |
0.4 |
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0.5 |
0.4 |
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1.5 |
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1.5 |
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(1)Gate |
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3.0 |
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(2)Drain
(3)Source |
Abbreviated symbol : LR |
zInner circuit |
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DRAIN |
GATE |
2 |
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1 |
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SOURCE |
1 ESD PROTECTION DIODE2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter |
Symbol |
Limits |
Unit |
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Drain-source voltage |
VDSS |
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60 |
V |
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Gate-source voltage |
VGSS |
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±20 |
V |
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Drain current |
Continuous |
ID |
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±2 |
A |
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Pulsed |
IDP |
1 |
±8 |
A |
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Source current |
Continuous |
IS |
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2 |
A |
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Pulsed |
ISP |
1 |
8 |
A |
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Total power dissipation |
PD |
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500 |
mW |
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2 |
W |
2 |
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Channel temperature |
Tch |
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150 |
°C |
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Range of storage temperature |
Tstg |
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−55 to +150 |
°C |
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1 Pw≤10 s, Duty cycle≤1% |
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+ + |
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2 When mounted on a 40 40 0.7mm ceramic board |
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zThermal resistance
Parameter |
Symbol |
Limits |
Unit |
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Channel to ambient |
Rth(ch-a) |
250 |
°C/W |
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62.5 |
°C/W |
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When mounted on a 40 40 0.7mm ceramic board |
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+ + |
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www.rohm.com |
1/4 |
2009.03 - Rev.A |
○ 2009 ROHM Co., Ltd. All rights reserved. |
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c |
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RHP020N06 |
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Data Sheet |
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zElectrical characteristics (Ta=25°C) |
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Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
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Conditions |
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Gate-source leakage |
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IGSS |
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− |
− |
±10 |
µA |
VGS= ±20V, VDS=0V |
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Drain-source breakdown voltage |
V(BR) DSS |
60 |
− |
− |
V |
ID= 1mA, VGS=0V |
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Zero gate voltage drain current |
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IDSS |
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− |
− |
1 |
µA |
VDS= 60V, VGS=0V |
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Gate threshold voltage |
VGS (th) |
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1.0 |
− |
2.5 |
V |
VDS= 10V, ID= 1mA |
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Static drain-source on-state |
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− |
150 |
200 |
mΩ |
ID= 2A, VGS= 10V |
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RDS (on) |
− |
200 |
280 |
mΩ |
ID= 2A, VGS= 4.5V |
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resistance |
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− |
240 |
340 |
mΩ |
ID= 2A, VGS= 4V |
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Forward transfer admittance |
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Yfs |
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2.0 |
− |
− |
S |
VDS= 10V, ID= 2A |
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Input capacitance |
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Ciss |
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− |
140 |
− |
pF |
VDS= 10V |
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Output capacitance |
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Coss |
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− |
50 |
− |
pF |
VGS=0V |
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Reverse transfer capacitance |
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Crss |
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− |
40 |
− |
pF |
f=1MHz |
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Turn-on delay time |
td (on) |
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− |
7 |
− |
ns |
VDD |
30V |
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Rise time |
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tr |
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− |
10 |
− |
ns |
ID= 1A |
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VGS= 10V |
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Turn-off delay time |
td (off) |
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− |
22 |
− |
ns |
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RL=30Ω |
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Fall time |
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tf |
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− |
18 |
− |
ns |
RG=10Ω |
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Total gate charge |
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Qg |
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− |
7 |
14 |
nC |
VDD |
30V |
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Gate-source charge |
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Qgs |
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− |
1 |
− |
nC |
VGS= 10V |
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Gate-drain charge |
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Qgd |
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− |
2 |
− |
nC |
ID= 2A |
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Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Conditions |
Forward voltage |
VSD |
− |
− |
1.2 |
V |
IS= 2A, VGS=0V |
www.rohm.com |
2/4 |
2009.03 - Rev.A |
○ 2009 ROHM Co., Ltd. All rights reserved. |
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c |
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