Datasheet RCX120N25 Datasheet (ROHM)

10V Drive Nch MOSFET

RCX120N25

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High speed switching.

3) Gate-source voltage V

garanteed to be ±30V

GSS

4) High Power Package (TO-220FM).

 Application  Inner circuit

Switching

TO -220F M

10.0

15.0

12.0

8.02.5

14.0

1.2

1.3

2.54 2.62.54

(2)(3)(1)

Data Sheet

φ

3.2

4.5

2.8

0.8

0.75

 Packaging specifications

Package Bulk

Type

Code -

Basic ordering unit (pieces)

500

RCX120N25 

 Absolute maximum ratings (Ta = 25C)

Parameter

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I

Continuous I

Pulsed I

Avalanche current I

Avalanche energy E

Power dissipation(Tc=25C) P

Symbol Limits Unit

DSS

GSS

D

DP

S

SP

AS

AS

D

*3

*1

*3

*1

*2

*2

250 V

30 V

12 A

48 A

12 A

48 A

6A

10.5 mJ

40 W

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=50V, RG=25Tch=25C

DD

(1) Gate
(2) Drain
(3) Souce

∗1

(1) (3)(2)

1 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 3.125 C / W

* TC=25C

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Symbol Limits Unit

*

1/6

2011.10 - Rev.A

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Data Sheet

RCX120N25

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

l 3.25 - - S ID=6A, VDS=10V

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

250 - - V ID=1mA, VGS=0V

--10AVDS=250V, VGS=0V

3-5VV

- 180 235

*

m

=10V, ID=1mA

DS

ID=6A, VGS=10V

*

- 1800 - pF VDS=25V

- 100 - pF VGS=0V

- 60 - pF f=1MHz

- 33 - ns ID=6A, VDD 125V

*

- 65 - ns VGS=10V

*

- 45 - ns RL=20.83

*

- 20 - ns RG=10

*

- 35 - nC ID=12A,

*

- 15 - nC VDD 125V

*

- 12 - nC VGS=10V

*

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=12A, VGS=0V

2/6

2011.10 - Rev.A

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Data Sheet

RCX120N25

Electrical characteristic curves (Ta=25C)

0

5

10

15

0 1 2 3 4 5 6 7 8 9 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=7.0V

VGS=6.0V

VGS=6.5V

VGS=8.0V

VGS=10.0V

Ta=25°C
Pulsed

0

1

2

3

4

5

6

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=7.0V

VGS=6.0V

VGS=6.5V

VGS=8.0V

VGS=10.0V

Ta=25°C
Pulsed

0.00001

0.0001

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8 9 10

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta=125°C

Ta=75°C
Ta=25°C

Ta=-25°C

0

2

4

6

8

-50 0 50 100 150

Gate Threshold Voltage : V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0.01

0.1

1

10

0.001 0.01 0.1 1 10 100

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

0.1

0.2

0.3

0.4

0.5

-50 0 50 100 150

Static Drain-Source On-State Resistance :R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=12A

ID=6A

3/6

2011.10 - Rev.A

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Data Sheet

RCX120N25

0.01

0.1

1

10

100

0 0.5 1 1.5 2

Source Current : Is [A]

Source-Drain Voltage : VSD [V]

Fig.8 Source Current vs. Source-Drain Voltage

VGS=0V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

1

10

100

1000

10000

0.01 0.1 1 10 100

Switching Time : t [ns]

Drain Current : ID [A]

Fig.10 Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

VDD≒125V
V

GS

=10V

R

G

=10Ω

T

a

=25°C

Pulsed

0

5

10

15

0 5 10 15 20 25 30 35 40 45 50 55

Gate-Source Voltage : V

GS

[V]

Total Gate Charge : Qg [nC]

Fig.11 Dynamic Input Characteristics

Ta=25°C
VDD=125V
I

D

=12A

Pulsed

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Capacitance : C [pF]

Drain-Source Voltage : VDS [V]

Fig.12 Typical Capacitance vs. Drain-Source Voltage

T

a

=25

°C
f=1MHz
VGS=0V

C

iss

C

oss

C

rss

0.01

0.1

1

10

100

0.01 0.1 1 10 100

Forward Transfer Admittance:Y

fs

[S]

Drain Current : ID [A]

Fig.7 Forward Transfer Admittance vs. Drain Current

VDS=10V
pulsed

Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C

0

0.1

0.2

0.3

0.4

0 5 10 15 20

Static Drain-Source On-State Resistance

R

DS

(on)[Ω]

Gate-Source Voltage : VGS [V]

Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

ID=6.0A

ID=12.0A

Ta=25°C
Pulsed

4/6

2011.10 - Rev.A

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Data Sheet

RCX120N25

0.01

0.1

1

10

100

0.1 1 10 100 1000

Drain Current : I

D

[ A ]

Drain-Source Voltage : VDS [ V ]

Fig.14 Maximum Safe Operating Area

T

a

=25°C

Single Pulse

Operation in this area is limited by R

DS(on)

(VGS = 10V)

PW = 100μs

PW = 1ms

PW = 10ms

DC Operation

0.0001

0.001

0.01

0.1

1

10

0.0001 0.001 0.01 0.1 1 10 100 1000

Normalized Transient Thermal Resistance : r（t）

Pulse width : Pw (s)

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T

a

=25°C

Single Pulse

Rth

(ch-a)

=80.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

10

100

1000

1 10 100

Reverse Recovery Time : t

rr

[ns]

Source Current : IS [A]

Fig.13 Reverse Recovery Time vs. Source Current

Ta=25°C
V

gs

=0V

di/dt=100A/us
Pulsed

5/6

2011.10 - Rev.A

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Data Sheet

RCX120N25

F

it

%

V
V

F

S

V

 Measurement circuits

V

GS

R

G

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

ig.2-1 Gate Charge Measurement Circuit

D.U.T.

D.U.T.

D

I

R

L

V

DD

D

I

R

L

V

DD

Pulse width

V

DS

50%

10%

GS
DS

10% 10%

90%

50%

90% 90

t

d(on)

t

on

t

d(off)

t

r

t

f

t

off

Fig.1-2 Switching Waveforms

V

G

V

D

GS

QgsQ

Q

g

gd

Charge

Fig.2-2 Gate Charge Waveform

V

GS

R

G

D.U.T.

I

AS

V

L

DD

V

Fig.3-1 Avalanche Measurement Circuit

DS

I

AS

V

DD

1

2

L

E

AS

=

I

AS

2

V

(BR)DSS

V

(BR)DSS

- V

V

DD

(BR)DSS

Fig.3-2 Avalanche Waveform

6/6

2011.10 - Rev.A

Notes

Notice

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