ROHM RCJ330N25 Technical data
Data Sheet
10V Drive Nch MOSFET
RCJ330N25
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage
V
garanteed to be ±30V .
GSS
4) High package power.
Application Inner circuit
Switching
LPTS
10.1
9.0
13.1
1.24
1.0
3.0
2.54
0.78
5.08
(1) (2) (3)
4.5
1.3
0.4
1.2
2.7
Packaging specifications
Package Taping
Type
Code
TL
Basic ordering unit (pieces) 1000
RCJ330N25
Absolute maximum ratings (Ta 25°C)
Parameter
Drain-source voltage V
Gate-source voltage V
Drain current
Source current
(Body Diode)
Continuous I
Pulsed I
Continuous I
Pulsed I
Avalanche current I
Avalanche energy E
Power dissipation (Tc=25C) P
Symbol Limits Unit
DSS
GSS
D
DP
S
SP
AS
AS
D
*3
*1
*3
*1
*2
*2
250 V
30 V
33 A
132 A
26 A
104 A
16.5 A
74.8 mJ
40 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L≒500H, V
*3 Limited only by maximum temperature allowed.
=50V, Rg=25, starting Tch=25°C
DD
(1) Gate
(2) Drain
(3) Source
∗1
(1) (3)(2)
1 BODY DIODE
Thermal resistance
Parameter
Channel to Case Rth(ch-c) 3.12 C / W
* TC=25°C
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Symbol Limits Unit
*
1/6
2011.10 - Rev.A
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Data Sheet
RCJ330N25
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage I
Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate threshold voltage V
Static drain-source on-state
resistance
Forward transfer admittance l Y
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q
Gate-source charge Q
Gate-drain charge Q
*Pulsed
Symbol Min. Typ. Max. Unit
GSS
(BR)DSS
DSS
GS (th)
R
DS (on)
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
Conditions
--100 nA VGS=±30V, VDS=0V
250 - - V ID=1mA, VGS=0V
--1AVDS=250V, VGS=0V
3-5VV
-77
*
*
l10 20 - SID=16.5A, VDS=10V
105
m
- 4500 - pF VDS=25V
- 220 - pF VGS=0V
- 130 - pF f=1MHz
- 50 - ns ID=16.5A, VDD 125V
*
- 200 - ns VGS=10V
*
- 120 - ns RL=7.6
*
- 140 - ns RG=10
*
- 80 - nC ID=33A,
*
- 25 - nC VDD 125V
*
- 27 - nC VGS=10V
*
=10V, ID=1mA
DS
ID=16.5A, VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage V
*Pulsed
SD
*
- - 1.5 V Is=33A, VGS=0V
ConditionsParameter
2/6
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RCJ330N25
Electrical characteristic curves (Ta=25C)
0
5
10
15
20
25
30
35
0 1 2 3 4 5
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=5.5V
VGS=10.0V
VGS=7.0V
VGS=8.0V
VGS=6.0V
VGS=6.5V
Ta=25°C
Pulsed
0
5
10
15
20
25
30
35
0 10 20 30 40 50
Drain Current : I
D
[A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=6.0V
VGS=10.0V
VGS=5.5V
VGS=6.5V
VGS=7.0V
VGS=8.0V
Ta=25°C
Pulsed
0.001
0.01
0.1
1
10
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
Drain Currnt : I
D
[A]
Gate-Source Voltage : VGS [V]
Fig.3 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2
3
4
5
6
-50 0 50 100 150
Gate Threshold Voltage : V
GS(th)
[V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
VDS=10V
I
D
=1mA
pulsed
1
10
100
1000
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
50
100
150
200
250
300
-50 -25 0 25 50 75 100 125 150
Static Drain-Source On-State Resistance : R
DS(on)
[mΩ]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
VGS=10V
pulsed
ID=33A
ID=16.5A
3/6
2011.10 - Rev.A
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