ROHM RCD080N25 Technical data

Data Sheet

10V Drive Nch MOSFET

RCD080N25

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide range of SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RCD080N25 

(1) Gate

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

E

DSS

GSS

DP

SP

I

AS

D

S

AS

250 V

30 V

*3

*1

*3

*1

*2

*2

*4

D

8A

32 A

8A

32 A

4A

4.67 mJ

20 W

(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

∗1

(1) (3)(2)

1 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 6.25 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Symbol Limits Unit

*

1/5

2011.11 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

RCD080N25

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

250 - - V ID=1mA, VGS=0V

--10AVDS=250V, VGS=0V

3-5VV

*

- 225 300

*

l 2.7 - - S VDS=10V, ID=4A

m

- 1440 - pF VDS=25V

- 80 - pF VGS=0V

- 40 - pF f=1MHz

- 30 - ns VDD 125V, ID=4A

*

- 40 - ns VGS=10V

*

- 40 - ns RL=31.25

*

- 15 - ns RG=10

*

- 25 - nC VDD 125V, ID=8A

*

- 10 - nC VGS=10V

*

-10-nC

*

=10V, ID=1mA

DS

ID=4A, VGS=10V

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=8A, VGS=0V

2/5

2011.11 - Rev.A