ROHM RB751S-40, RB751V-40 Datasheet
Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
RB751S-40 / RB751V-40
Applications
!
High speed switching
For Detection
Features
!!!!
1) Small surface mounting type.
(EMD2, UMD2)
2) Low reverse current and low
forward voltage.
3) High reliability.
Construction
!!!!
Silicon epitaxial planar
External dimensions
!!!!
RB751S-40
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
2.5±0.2
1.7±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
(Units : mm)
5
0.3±0.05
1.25±0.1
1.6±0.1
1.2±0.05
CATHODE MARK
+0.2
0.7
−0.1
CATHODE MARK
5
0.3±0.05
0.8±0.05
0.1
0.6±0.1
2.5±0.2
+0.1
−0.05
∗ There are two different markings.
0.12±0.05
1.7±0.1
5
1.25±0.1
CATHODE MARK
0.3±0.05
+0.1
0.1
−0.05
+0.2
0.7
−0.1
Absolute maximum ratings
!!!!
(Ta = 25°C)
Parameter Symbol Limits Unit
Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current
V
RM
R
O
*
I
FSM
Junction temperature Tj ˚C
Storage temperature −40~+125
* 60 Hz for 1
Electrical characteristics
!!!!
Tstg ˚C
(Ta = 25°C)
40
30
30 mA
200 mA
125
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
Capacitance between terminals − 2.0 − V
Note) ESD sensitive product handling required.
F
R
T
− 0.37 V
− 0.5 µAVR = 30V
−
pFC
V
IF = 1mA−
R
= 1V, f = 1MHz
Diodes
Electrical characteristic curves
!!!!
1000m
100m
(A)
F
10m
1m
100µ
10µ
FORWARD CURRENT : I
1µ
0
Ta = 75˚C
Ta = 125˚C
Ta = 25˚C
Ta = -25˚C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : V
Fig. 1 Forward characteristics
Typ.
pulse measurement
F
(V)
(Ta = 25°C)
100µ
10µ
(A)
R
1µ
100n
10n
REVERSE CURRENT : I
1n
Ta = 125˚C
Ta = 75˚C
Ta = 25˚C
Ta = -25˚C
Typ.
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : V
pulse measurement
R
(V)
Fig. 2 Reverse characteristics
RB751S-40 / RB751V-40
100
T (pF)
50
20
10
5
2
CAPACITANCE BETWEEN TERMINALS : C
1
0 2468101214
REVERSE VOLTAGE : V
Fig. 3 Capacitance between
terminals characteristics
Ta = 25˚C
f = 1MHz
R
(V)
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