● 寸法図（
）
查询RB751G-40供应商
Diodes
Schottky barrier diode
RB751G-40
zApplicat ions
General rectification
zFeatures
1)
Small power mold type.
(VMD2)
2) Low V
F
3) High reliability
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta=25°C)
everse voltage (repetitive peak)
R
everse voltage (DC)
R
verage rectified forward current
A
Fo
rward current surge peak （60Hz・1cyc
unction temperature
J
Storage
Parameter
temperature
zElectrical characteristic (Ta=25°C)
orward voltage
F
Reverse current
Parameter
een terminals
zExternal dimensions (Unit : mm)
0.6±0.05
1.0±0.05
1.4±0.05
0.27±0.03
ROHM : VMD2
dot (year week factory)
zT aping dime nsions (Unit : mm)
4±0.1
2.1±0.1
1.11±0.05
0.76±0.1
Symbol Unit
V
RM
V
R
Io mA
I
）
FSM
Tj
Tstg
Symbol Min. Typ. Max. Unit Conditions
V
F
I
R
Ct - 2 - pF
Limits
-40 to +125
--0.37V
--0.5µA
0.5±0.05
2±0.05
40
30
30
200
125
0.13±0.03
4±0.1
φ1.5+0.1
0
mA
℃
℃
zLand size figure
zStructure
2±0.05
V
V
=1mA
I
F
V
=30V
R
=1V , f=1MHzCapacitance betw
V
R
RB751G-40
0.5
0.5
VMD2
1.75±0.1
3.5±0.05
0.4
φ0.5
1.2
0.18±0.05
8.0±0.3
0.1
0.3
0.65±0.05
Rev.B 1/3
Diodes
RB751G-40
zElectrical characteristic curves
:IF(mA)
RRENT
CU
FORWARD
100
Ta=75℃
10
Ta=125℃
1
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
0REVERSE CURRENT:IR(nA)
1
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
VR-IR CHARACT ERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
330
V)
320
(m
310
AGE:VF
VOLT
300
WARD
290
FOR
280
AVE:304.2mV
VF DISPERSION MAP
Ta=25℃
IF=1mA
n=30pcs
REVERSE CURRENT:IR(nA)
1000
900
800
700
600
500
400
300
200
100
CAPACITANCE BETWEEN
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
1
0
AVE:1.81pF
Ct DISPERSION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
Ta=25℃
VR=30V
n=30pcs
AVE:111.0nA
0
IR DISPERSION MAP
20
15
10
PEAK SURGE
5
ORWARD CURRENT:IFSM(A)
F
0
IFSM DISRESION MAP
Ifsm
AVE:3.40A
1cyc
8.3ms
30
25
20
15
10
5
RESERVE RECOVERY TIME:trr(ns)
0
AVE:11.7ns
trr DISPERSION MAP
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
10
8
6
4
PEAK SURGE
2
FORWARD CURRENT:IFSM(A)
0
1 10 100
IFSM-CYCLE CHARACTERISTICS
Ifsm
8.3ms
NUMBER OF CYCLES
8.3ms
1cyc
10
8
6
4
PEAK SURGE
2
FORWARD CURRENT:IFSM(A)
0
0.1 1 10 100
TIME:t(ms)
IFSM-t CHARACTERISTICS
Ifsm
1000
t
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
10
0.001 0.1 10 1000
Mounted on epoxy board
IM=1mA IF=10mA
1ms
TIME:t(s)
Rth-t CHARACTERISTICS
Rth(j-a)
Rth(j-c)
time
300us
0.05
0.04
0.03
Sin(θ＝180)
0.02
FORWARD POWER
DISSIPATION:Pf(W)
0.01
0
0 0.01 0.02 0.03 0.04 0.05
D=1/2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
DC
Rev.B 2/3
Diodes
0.003
)
0.002
(W
R
0.001
REVERSE POWER
DISSIPATION:P
0
D=1/2
DC
Sin(θ＝180)
AVERAGE RECTIFIED
0 10203040
REVERSE VOLTAGE:VR(V)
CHARACTERISTICS
VR-P
R
0.1
0A
0.08
0.06
DC
0.04
D=1/2
0.02
FORWARD CURRENT:Io(A)
Sin(θ＝180)
0
0 25 50 75 100 125
0V
t
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
T
D=t/T
VR=20V
Tj=125℃
RB751G-40
0.1
Io
VR
0.08
0.06
DC
0.04
D=1/2
AVERAGE RECTIFIED
0.02
FORWARD CURRENT:Io(A)
Sin(θ＝180)
0
0 25 50 75 100 125
0A
0V
t
T Tj=125℃
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
D=t/T
VR=20V
Io
VR
Rev.B 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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