ROHM RB751G-40 Technical data

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Diodes

Schottky barrier diode

RB751G-40

zApplicat ions
General rectification

zFeatures

1)

Small power mold type.

(VMD2)

2) Low V

F

3) High reliability

zConstruction

Silicon epitaxial planar

zAbsolute maximum ratings (Ta=25°C)

everse voltage (repetitive peak)

R

everse voltage (DC)

R

verage rectified forward current

A
Fo

rward current surge peak （60Hz・1cyc

unction temperature

J
Storage

Parameter

temperature

zElectrical characteristic (Ta=25°C)

orward voltage

F
Reverse current

Parameter

een terminals

zExternal dimensions (Unit : mm)

0.6±0.05

1.0±0.05

1.4±0.05

0.27±0.03

ROHM : VMD2

dot (year week factory)

zT aping dime nsions (Unit : mm)

4±0.1

2.1±0.1

1.11±0.05

0.76±0.1

Symbol Unit

V

RM

V

R

Io mA

I

）

FSM

Tj

Tstg

Symbol Min. Typ. Max. Unit Conditions

V

F

I

R

Ct - 2 - pF

Limits

-40 to +125

--0.37V

--0.5µA

0.5±0.05

2±0.05

40
30

30
200
125

0.13±0.03

4±0.1

φ1.5+0.1
　　　　　0

mA

℃
℃

zLand size figure

zStructure

2±0.05

V
V

=1mA

I

F

V

=30V

R

=1V , f=1MHzCapacitance betw

V

R

RB751G-40

0.5

0.5

VMD2

1.75±0.1

3.5±0.05

0.4

φ0.5

1.2

0.18±0.05

8.0±0.3

0.1

0.3

0.65±0.05

Rev.B 1/3

Diodes

RB751G-40

zElectrical characteristic curves

:IF(mA)

RRENT
CU

FORWARD

100

Ta=75℃

10

Ta=125℃

1

0.1

0.01

0.001
0 100 200 300 400 500 600 700 800

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

Ta=25℃

Ta=-25℃

100000

10000

1000

100

10

0REVERSE CURRENT:IR(nA)

1

0 5 10 15 20 25 30 35 40

REVERSE VOLTAGE：VR(V)

VR-IR CHARACT ERISTICS

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0 5 10 15 20 25 30

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

f=1MHz

330

V)

320

(m

310

AGE:VF

VOLT

300

WARD

290

FOR

280

AVE:304.2mV

VF DISPERSION MAP

Ta=25℃

IF=1mA

n=30pcs

REVERSE CURRENT:IR(nA)

1000

900

800

700

600

500

400

300

200

100

CAPACITANCE BETWEEN

10

9

8

7

6

5

4

3

TERMINALS:Ct(pF)

2

1

0

AVE:1.81pF

Ct DISPERSION MAP

Ta=25℃

f=1MHz

VR=0V

n=10pcs

Ta=25℃

VR=30V

n=30pcs

AVE:111.0nA

0

IR DISPERSION MAP

20

15

10

PEAK SURGE

5

ORWARD CURRENT:IFSM(A)
F

0

IFSM DISRESION MAP

Ifsm

AVE:3.40A

1cyc

8.3ms

30

25

20

15

10

5

RESERVE RECOVERY TIME:trr(ns)

0

AVE:11.7ns

trr DISPERSION MAP

Ta=25℃

IF=0.5A

IR=1A

Irr=0.25*IR

n=10pcs

10

8

6

4

PEAK SURGE

2

FORWARD CURRENT:IFSM(A)

0

1 10 100

IFSM-CYCLE CHARACTERISTICS

Ifsm

8.3ms

NUMBER OF CYCLES

8.3ms

1cyc

10

8

6

4

PEAK SURGE

2

FORWARD CURRENT:IFSM(A)

0

0.1 1 10 100
TIME:t(ms)

IFSM-t CHARACTERISTICS

Ifsm

1000

t

100

TRANSIENT

THAERMAL IMPEDANCE:Rth (℃/W)

10

0.001 0.1 10 1000

Mounted on epoxy board

IM=1mA IF=10mA

1ms

TIME:t(s)

Rth-t CHARACTERISTICS

Rth(j-a)

Rth(j-c)

time

300us

0.05

0.04

0.03

Sin(θ＝180)

0.02

FORWARD POWER

DISSIPATION:Pf(W)

0.01

0

0 0.01 0.02 0.03 0.04 0.05

D=1/2

AVERAGE RECTIFIED

FORWARD CURRENT：Io(A)

Io-Pf CHARACTERISTICS

DC

Rev.B 2/3