查询RB731XN供应商
Diodes
Schottky barrier diode
RB731XN
zApplicat ions
General rectification
zFeatures
1)
Small power mold type.
(UMD6)
2) Low V
F
3) High reliability
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
∗ Rating for each diode Io/3
zElectrical characteristic (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminal
zExternal dimensions (Unit : mm)
2.0±0.2
0.1
各リードとも
0.25±
Each lead has sam e dim ens ion
0.05
同寸法
(5)(6)
(4)
(1) (3)(2)
0.65
1.3±0.1
0.65
1.25±0.1
ROHM : UMD6
JEDEC : SOT-36 3
JEITA : SC-88
dot (year wee k factory)
zT aping dime nsions (Unit : mm)
2.0±0.05
4.0±0.1
2.45±0.1
2.2±0.1
Limits
RM
V
V
R
∗
V
F
I
R
Ct
∗
I
O
I
FSM
Tj 125
Tstg
−
−
−
−40 to +125 °C
−
−
2
0.15±0.05
2.1±0.1
4.0±0.1
0.9±0.1
0.7
φ1.5±0.1
0
0～0.1
40
40
30 mA
200 mA
0.37 V I
1
−
0.1Min
Unit
V
V
°C
µA
pF
zLand size figure
zStructure
φ1.1±0.1
F
=1mA
VR=10V
V
R
=1V, f=1MHz
UMD6
2.4±0.1
0.9
0.35
1.75±0.1
3.5±0.05
5.5±0.2
0～0.5
RB731XN
0.650.65
1.6
0.3±0.1
8.0±0.2
2.4±0.1
1.15±0.1
Rev.B 1/3
Diodes
zElectrical characteristic curves
100
FORWARD CURRENT:IF(mA)
Ta=125℃
10
Ta=75℃
1
0.1
0.01
0 100 200 300 400 500 600 700 800 900 1000
Ta=-25℃
Ta=25℃
FORWARD VO LTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000
100
10
1
0.1
REVERSE CURRENT:IR(u A)
0.01
0.001
0102030
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
CAPACITANC E BETWEEN
300
290
280
270
260
FORWARD VOLT AGE:VF(mV)
250
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
REVERSE CURRENT:IR(nA)
0.1
0
AVE:0.083nA
Ta=25℃
VR=10V
n=30pcs
CAPACITANCE BETWEEN
VF DIPERSION M AP
IR DISPERSION MAP
20
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
Ifsm
AVE:7.30A
1cyc
8.3ms
IFSM DISPERSION MAP
20
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
110100
IFSM-CYCLE CHARACTERISTICS
Ifsm
8.3ms
NUMBER OF CYCLES
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
Rth(j-a)
100
Mounted on epoxy board
TRANSIENT
10
THAERMAL IMPEDAN CE:Rth (℃/W )
1
0.001 0.1 10 1000
IM=1mA IF= 10mA
1ms
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Rth(j-c)
time
0.04
0.03
0.02
FORWARD POWER
DISSIPATION:Pf (W)
0.01
0.00
0.00 0.01 0.02 0.03 0.04 0.05
D=1/2
Sin(θ＝180)
AVERAGE RECT IFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
DC
0.003
(W)
0.002
R
0.001
REVERSE POWER
DISSIPATION:P
RB731XN
10
f=1MHz
1
TERMINALS:Ct(pF)
0.1
0 5 10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
1
0
10
9
8
7
6
5
4
3
2
1
0
1 10 100
0
0102030
AVE:2.52pF
Ct DISPERSION M AP
TIME:t(ms)
IFSM-t CHARACTERISTICS
DC
Sin(θ＝180)
REVERSE VOL TAGE:VR( V)
CHARACTERISTICS
VR-P
R
Rev.B 2/3
Ifsm
Ta=25℃
f=1MHz
VR=0V
n=10pcs
t
Diodes
0.1
A)
0.08
0.06
0.04
RWARD CURRENT:Io(
AVERAGE RECT IFIED
0.02
FO
0
T
Io
VR
D=t/T
VR=15V
Tj=125℃
Per chip
DC
D=1/2
Sin(θ＝180)
0 25 50 75 100 125
0A
0V
t
AMBIENT T EMPERATU RE:Ta(℃)
Derating Curveﾞ(Io-Ta)
0.1
Per chip
0.08
0.06
DC
D=1/2
0.04
AVERAGE RECT IFIED
FORWARD CURRENT:Io(A)
Sin(θ＝180)
0.02
0
0 25 50 75 100 125
0A
0V
CASE TEMPARATURE:Tc( ℃)
Derating Curveﾞ(Io-Tc)
RB731XN
Io
T
D=t/T
VR=15V
Tj=125℃
VR
t
Rev.B 3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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