ROHM RB731XN Technical data

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Diodes

Schottky barrier diode

RB731XN

zApplicat ions
General rectification

zFeatures

1)

Small power mold type.

(UMD6)

2) Low V

F

3) High reliability

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature

∗ Rating for each diode Io/3

zElectrical characteristic (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminal

zExternal dimensions (Unit : mm)

2.0±0.2

0.1

各リードとも

0.25±

Each lead has sam e dim ens ion

0.05

同寸法

(5)(6)

(4)

(1) (3)(2)

0.65

1.3±0.1

0.65

1.25±0.1

ROHM : UMD6
JEDEC : SOT-36 3
JEITA : SC-88

dot (year wee k factory)

zT aping dime nsions (Unit : mm)

2.0±0.05

4.0±0.1

2.45±0.1

2.2±0.1

Limits

RM

V

V

R

∗

V

F

I

R

Ct

∗

I

O

I

FSM

Tj 125

Tstg

−

−

−

−40 to +125 °C

−

−

2

0.15±0.05

2.1±0.1

4.0±0.1

0.9±0.1

0.7

φ1.5±0.1
　　　　　 0

0～0.1

40

40

30 mA

200 mA

0.37 V I
1

−

0.1Min

Unit

V
V

°C

µA

pF

zLand size figure

zStructure

φ1.1±0.1

F

=1mA
VR=10V
V

R

=1V, f=1MHz

UMD6

2.4±0.1

0.9

0.35

1.75±0.1

3.5±0.05

5.5±0.2

0～0.5

RB731XN

0.650.65

1.6

0.3±0.1

8.0±0.2

2.4±0.1

1.15±0.1

Rev.B 1/3

Diodes

zElectrical characteristic curves

100

FORWARD CURRENT:IF(mA)

Ta=125℃

10

Ta=75℃

1

0.1

0.01

0 100 200 300 400 500 600 700 800 900 1000

Ta=-25℃

Ta=25℃

FORWARD VO LTAGE：VF(mV)

VF-IF CHARACTERISTICS

1000

100

10

1

0.1

REVERSE CURRENT:IR(u A)

0.01

0.001
0102030

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

CAPACITANC E BETWEEN

300

290

280

270

260

FORWARD VOLT AGE:VF(mV)

250

AVE:267.4mV

Ta=25℃

IF=1mA

n=30pcs

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

REVERSE CURRENT:IR(nA)

0.1
0

AVE:0.083nA

Ta=25℃

VR=10V
n=30pcs

CAPACITANCE BETWEEN

VF DIPERSION M AP

IR DISPERSION MAP

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

Ifsm

AVE:7.30A

1cyc

8.3ms

IFSM DISPERSION MAP

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

110100

IFSM-CYCLE CHARACTERISTICS

Ifsm

8.3ms

NUMBER OF CYCLES

1cyc

8.3ms

PEAK SURGE

FORWARD CURRENT:IFSM(A)

1000

Rth(j-a)

100

Mounted on epoxy board

TRANSIENT

10

THAERMAL IMPEDAN CE:Rth (℃/W )

1

0.001 0.1 10 1000

IM=1mA IF= 10mA

1ms

300us

TIME:t(s)

Rth-t CHARACTERISTICS

Rth(j-c)

time

0.04

0.03

0.02

FORWARD POWER

DISSIPATION:Pf (W)

0.01

0.00

0.00 0.01 0.02 0.03 0.04 0.05

D=1/2

Sin(θ＝180)

AVERAGE RECT IFIED

FORWARD CURRENT Io(A)

Io-Pf CHARACTERISTICS

DC

0.003

(W)

0.002

R

0.001

REVERSE POWER

DISSIPATION:P

RB731XN

10

f=1MHz

1

TERMINALS:Ct(pF)

0.1
0 5 10 15 20 25 30 35

REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

10

9

8
7

6
5
4

3

TERMINALS:Ct(pF)

2

1
0

10

9

8

7

6

5

4

3

2

1

0

1 10 100

0

0102030

AVE:2.52pF

Ct DISPERSION M AP

TIME:t(ms)

IFSM-t CHARACTERISTICS

DC

Sin(θ＝180)

REVERSE VOL TAGE:VR( V)

CHARACTERISTICS

VR-P

R

Rev.B 2/3

Ifsm

Ta=25℃

f=1MHz

VR=0V

n=10pcs

t