ROHM RB731U Datasheet

Diodes

Schottky barrier diode

RB731U

Applications

!

High speed switching.

Features

!

1) Small surface mounting type. (SMD6)

2) Low V

3) Three diodes in parallel for easy installation.

!

Silicon epitaxial planar

!

F

and low IR.

Construction

Circuit

External dimensions

!!!!

2.9±0.2

1.9±0.2

0.95 0.95

+0.1

0.3

−0.05

ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457

(Units : mm)

D 3 P

−0.1

+0.2

2.8±0.2

1.6

0.15

1.1

+0.1

−0.06

+0.2

−0.1

0.8±0.1

RB731U

0∼0.1

0.3∼0.6

Absolute maximum ratings

!!!!

(Ta=25°C)

Parameter Symbol Limits Unit

Peak reverse voltage V
DC reverse voltage V
Mean rectifying current I
Peak forward surge current

∗

I

FSM

RM

R

O

40 V
40 V
30 mA

200 mA

Junction temperature Tj 125 ˚C
Storage temperature Tstg −40∼+125 ˚C

∗ 60 Hz for 1

Electrical characteristics

!!!!

(Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
Reverse current I
Capacitance between terminals − 2.0 − pF V

Note) ESD sensitive product handling required.

F

R

T

−−0.37 V IF=1mA

−−1 µAVR=10V

R

=1V, f=1MHzC

Diodes

Electrical characteristic curves

!!!!

1000m

100m

A)

(

F

Ta=125˚C

10m

1m

100µ

FORWARD CURRENT : I

10µ

1µ

Ta=75

Ta=25˚C

Ta=−25

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

FORWARD VOLTAGE : V

Fig.1 Forward characteristics

100

80

˚C

˚C

Typ.
pulse measurement

F

(

V)

(Ta=25°C)

A)

(

R

REVERSE CURRENT : I

100µ

10µ

100n

10n

1µ

1n

0

Ta=125˚C

Ta=75˚C

Ta=25˚C

Ta=−25

˚C

5 101520253035

REVERSE VOLTAGE : V

Fig.2 Reverse characteristics

RB731U

100

pF)

(

T

50

20

10

5

2

CAPACITANCE BETWEEN TERMINALS : C

1

R

(

V)

02468101214

REVERSE VOLTAGE : VR (V)

Fig.3 Capacitance between

terminals characteristics

60

40

Io CURRENT (%)

20

0

0

25 50 75 100 125

AMBIENT TEMPERATURE : Ta

Fig.4 Derating curve

(mounting on glass epoxy PCBs)

(˚C)