ROHM RB721Q-40 Technical data
查询RB721Q-40供应商
Diodes
Schottky barrier diode
RB721Q-40
zApplicat ions
Low current rectification
zFeatures
1) Glass sealed envelope. (MSD)
2) Low V
F,
Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta = 25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forw
F
orward current surge peak （60Hz・1cyc） 200
Junction temperature
Storage temperature
Parameter
ard current
zElectrical characteristics (Ta = 25°C)
orward voltage
F
Reverse current
Capacitance betw
Parameter
een terminals
zExternal dimensions (Unit : mm)
CATHODE BAND (BLACK)
29±1 29±1
ROHM : MSD
JEDEC : DO-3 4
zT aping specification s (Unit : mm)
H2
H1
cf : cumulative pitch tolerance with 20 pitch than ±1.5mm
注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする
BLUE
G2G1
A
L1
Symbol Unit
V
RM
V
R
Io mA
I
FSM
Tj
Tstg
-40 to +125
Symbol Min. Typ. Max. Unit
V
F
I
R
- - 0.37 V
--0.5µA
Ct - 2.0 - pF
S
2
-
2.7±0.3
F
Limits
40
40
30
125
TYPE NO. (BLACK)
H2
E
L2
H1
t
φ0 .4± 0.1
IVORY
I
B
C
D
V
V
mA
℃
℃
=1mA
I
F
=25V
V
R
V
=1V , f=1MHz
R
RB721Q-40
φ1.8±0.2
寸法規格値
Standar d dim ens ion
Mark
記号
value (mm)
(mm)
T-72 52.4±1.5
Ａ
T-77 26.0+0.4
'-0
Ｂ 5.0±0.5
Ｃ0.5ＭＡＸ
Ｄ0
Ｅ 50.4±0.4
Ｆ0.3ＭＡＸ
G1 0.1ＭＩＮ
G2 0ＭＩＮ
H1 6.0±0.5
H2 5.0±0.5
I0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t3.2MIN
＊H2(6mm)：BROWN
Conditions
Rev.A 1/3
RB721Q-40
Diodes
z
Electrical characteristic curves
Rev.A 2/3
Ta=-25℃
Ta=25℃
Ta=25℃
IF=1mA
n=30pcs
8.3ms
Rth(j-a)
Rth(j-l)
Rth(j-c)
1cyc
100000
REVERSE CURRENT:IR(nA)
Ta=125℃
10000
Ta=75℃
1000
Ta=25℃
100
10
Ta=-25℃
1
0.1
0 10203040
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
f=1MHz
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0102030
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
250
200
150
100
REVERSE CURRENT:IR(nA)
50
0
AVE:54.0nA
IR DISPERSION MAP
Ta=25℃
VR=25V
n=30pcs
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
AVE:2.07pF
Ct DISPERSION MAP
Ta=25℃
f=1MHz
VR=1V
n=10pcs
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
110100
IFSM-CYCLE CHARACTERISTICS
Ifsm
8.3ms
1cyc
NUMBER OF CYCLES
8.3ms
10
8
6
4
PEAK SURGE
2
FORWARD CURRENT:IFSM(A)
0
1 10 100
IFSM-t CHARACTERISTICS
Ifsm
TIME:t(ms)
t
0.05
0.04
0.03
FORWARD POWER
Sin(θ＝180)
0.02
DISSIPATION:Pf(W)
0.01
0
0 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
D=1/2
DC
0.005
0.004
(W)
R
0.003
0.002
REVERSE POWER
DISSIPATION:P
0.001
0
0 10203040
REVERSE VOLTAGE:VR(V)
VR-P
R
Sin(θ＝180)
D=1/2
DC
CHARACTERISTICS
100
10
1
0.1
FORWARD CURRENT:IF(mA)
0.01
330
320
310
300
290
FORWARD VOLTAGE:VF(mV)
280
20
15
URGE
10
PEAK S
5
FORWARD CURRENT:IFSM(A)
0
1000
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
10
0.001 0.1 10 1000
Ta=125℃
Ta=75℃
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
AVE:310.7mV
VF DISPERSION MAP
AVE:5.60A
IFSM DISRESION MAP
Mounted on epoxy board
IM=1mA IF=10mA
1ms
time
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ifsm
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