查询RB721Q-40供应商
Diodes
Schottky barrier diode
RB721Q-40
zApplicat ions
Low current rectification
zFeatures
1) Glass sealed envelope. (MSD)
2) Low V
F,
Low I
R
3) High reliability
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta = 25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forw
F
orward current surge peak （60Hz・1cyc） 200
Junction temperature
Storage temperature
Parameter
ard current
zElectrical characteristics (Ta = 25°C)
orward voltage
F
Reverse current
Capacitance betw
Parameter
een terminals
zExternal dimensions (Unit : mm)
CATHODE BAND (BLACK)
29±1 29±1
ROHM : MSD
JEDEC : DO-3 4
zT aping specification s (Unit : mm)
H2
H1
cf : cumulative pitch tolerance with 20 pitch than ±1.5mm
注) 累積ピッチの許容差は20ピッチで±1.5mm以下とする
BLUE
G2G1
A
L1
Symbol Unit
V
RM
V
R
Io mA
I
FSM
Tj
Tstg
-40 to +125
Symbol Min. Typ. Max. Unit
V
F
I
R
- - 0.37 V
--0.5µA
Ct - 2.0 - pF
S
2
-
2.7±0.3
F
Limits
40
40
30
125
TYPE NO. (BLACK)
H2
E
L2
H1
t
φ0 .4± 0.1
IVORY
I
B
C
D
V
V
mA
℃
℃
=1mA
I
F
=25V
V
R
V
=1V , f=1MHz
R
RB721Q-40
φ1.8±0.2
寸法規格値
Standar d dim ens ion
Mark
記号
value (mm)
(mm)
T-72 52.4±1.5
Ａ
T-77 26.0+0.4
'-0
Ｂ 5.0±0.5
Ｃ0.5ＭＡＸ
Ｄ0
Ｅ 50.4±0.4
Ｆ0.3ＭＡＸ
G1 0.1ＭＩＮ
G2 0ＭＩＮ
H1 6.0±0.5
H2 5.0±0.5
I0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t3.2MIN
＊H2(6mm)：BROWN
Conditions
Rev.A 1/3
RB721Q-40
Diodes
z
Electrical characteristic curves
Rev.A 2/3
Ta=-25℃
Ta=25℃
Ta=25℃
IF=1mA
n=30pcs
8.3ms
Rth(j-a)
Rth(j-l)
Rth(j-c)
1cyc
100000
REVERSE CURRENT:IR(nA)
Ta=125℃
10000
Ta=75℃
1000
Ta=25℃
100
10
Ta=-25℃
1
0.1
0 10203040
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
f=1MHz
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0102030
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
300
250
200
150
100
REVERSE CURRENT:IR(nA)
50
0
AVE:54.0nA
IR DISPERSION MAP
Ta=25℃
VR=25V
n=30pcs
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
AVE:2.07pF
Ct DISPERSION MAP
Ta=25℃
f=1MHz
VR=1V
n=10pcs
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
110100
IFSM-CYCLE CHARACTERISTICS
Ifsm
8.3ms
1cyc
NUMBER OF CYCLES
8.3ms
10
8
6
4
PEAK SURGE
2
FORWARD CURRENT:IFSM(A)
0
1 10 100
IFSM-t CHARACTERISTICS
Ifsm
TIME:t(ms)
t
0.05
0.04
0.03
FORWARD POWER
Sin(θ＝180)
0.02
DISSIPATION:Pf(W)
0.01
0
0 0.01 0.02 0.03 0.04 0.05
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
D=1/2
DC
0.005
0.004
(W)
R
0.003
0.002
REVERSE POWER
DISSIPATION:P
0.001
0
0 10203040
REVERSE VOLTAGE:VR(V)
VR-P
R
Sin(θ＝180)
D=1/2
DC
CHARACTERISTICS
100
10
1
0.1
FORWARD CURRENT:IF(mA)
0.01
330
320
310
300
290
FORWARD VOLTAGE:VF(mV)
280
20
15
URGE
10
PEAK S
5
FORWARD CURRENT:IFSM(A)
0
1000
100
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
10
0.001 0.1 10 1000
Ta=125℃
Ta=75℃
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
AVE:310.7mV
VF DISPERSION MAP
AVE:5.60A
IFSM DISRESION MAP
Mounted on epoxy board
IM=1mA IF=10mA
1ms
time
300us
TIME:t(s)
Rth-t CHARACTERISTICS
Ifsm
RB721Q-40
V
Diodes
IED
CTIF
E RE
ERAG
AV
Rev.A 3/3
0.1
0.08
0.06
0.04
0.02
FORWARD CURRENT:Io(A)
D=1/2
0
0 25 50 75 100 125
AMBIENT TEMPERATURE:Ta(℃)
0A
0V
DC
Sin(θ＝180)
Derating Curveﾞ(Io-Ta)
t
T
D=t/T
VR=20V
Tj=125℃
0.1
Io
VR
0.08
0.06
AVERAGE RECTIF IED
D=1/2
0.04
0.02
FORWARD CURRENT:Io(A)
0
0 25 50 75 100 125
0A
0V
t
DC
Sin(θ＝180)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
T
Io
VR
D=t/T
VR=20
Tj=125℃
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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