ROHM RB717F Technical data
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RB717F
Diodes
Schottky barrier diode
RB717F
zApplic ations
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low V
F
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Each lead has s am e dim ens ion
同寸法
(3)
0.15±0.05
(2) (1)
（0.65）
（0.65）
1.3±0.1
2.1±0.1
1.25±0.1
ROH M : UMD3
JEDEC : SOT-3 23
JEITA : SC- 70
dot (year week factory)
0.7±0.1
0.9±0.1
0～0.1
0.1Min
z T aping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
2.25±0.1
0
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
everse voltage (repetit ive peak)
R
Reevrse voltage (DC)
verage rectifoed forward current（*1
A
ward current surge peak （60Hz・1cyc）（*1
For
ion temperature
Junct
torage temperature
S
*1) Rating of per di ode
(
Parameter
）
Symbol Unit
V
RM
V
R
Io mA
）
I
FSM
Tj
Tstg
-40 to +125
zElectrical characteristics (Ta=25°C)
ward voltage
For
everse current
R
Capacitance between terminals
Parameter
Symbol Min. Typ. Max. Unit
V
F
I
R
--0.37V
--1µA
Ct - 2.0 - pF
z Land size figure (Unit : mm)
1.3
0.65
0.9MIN.
0.8MIN
UMD3
zStructure
1.75±0.1
3.5±0.05
8.0±0.2
2.4±0.1
5.5±0.2
φ0.5±0.05
0～0.1
Limits
40
40
V
V
30
200
125
mA
℃
℃
Conditions
=1mA
I
F
=10V
V
R
V
=1V,f=1MHz
R
Rev.B 1/3
1.6
0.3±0.1
2.4±0.1
1.25±0.1
Diodes
zElectrical characteristic curves (Ta=25°C)
100
Ta=125℃
10
Ta=75℃
1
0.1
FORWARD CURRENT:IF(mA)
0.01
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=-25℃
Ta=25℃
REVERSE CURRENT:IR(nA)
300
290
280
270
260
FORWARD VOLTAGE:VF(mV)
250
AVE:269.9mV
Ta=25℃
IF=1mA
n=30pcs
VF DISPERSION MAP
15
10
Ifsm
1cyc
8.3ms
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
0
AVE:7.30A
IFSM DISRESION MAP
1000
Rth(j-a)
100
TRANSIENT
10
THAERMAL IMPEDANCE:Rth (℃/W)
1
0.001 0.01 0.1 1 10 100 1000
Mounted on epoxy board
IM=1mA IF=10mA
1ms
TIME:t(s)
Rth-t CHARACTERISTICS
Rth(j-c)
FORWARD POWER
time
300us
1000
100
10
1
0.1
0.01
0.001
0 10203040
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
500
450
400
350
300
250
200
150
100
REVERSE CURRENT:IR(nA)
50
0
15
10
PEAK SURGE
5
Ifsm
FORWARD CURRENT:IFSM(A)
0
1 10 100
0.04
0.02
DISSIPATION:Pf(W)
0.00
0.00 0.01 0.02 0.03 0.04 0.05
AVE:78.0nA
IR DISPERSION MAP
8.3ms
1cyc
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
8.3ms
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=30V
n=30pcs
D=1/2
RB717F
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0 5 10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
10
9
8
7
6
5
4
PEAK SURGE
3
2
FORWARD CURRENT:IFSM(A)
1
0
110100
0.003
(W)
0.002
R
DC
0.001
REVERSE POWER
DISSIPATION:P
0
0 5 10 15 20 25 30
AVE:1.97pF
Ct DISPERSION MAP
Ifsm
t
TIME:t(ms)
IFSM-t CHARACTERISTICS
D=1/2
DC
REVERSE VOLTAGE:VR(V)
CHARACTERISTICS
VR-P
R
f=1MHz
Ta=25℃
f=1MHz
VR=1V
n=10pcs
Sin(θ＝180)
Rev.B 2/3
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