ROHM RB715Z Technical data

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Diodes

Schottky barrier diode

RB715Z

zApplications
General rectification

zFeatures

1)

Extra small power mold type.

(VMD3)

2) Low V

F

3) High reliability

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature

∗ Rating of per diode

zElectrical characteristic (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current

zExternal dimensions (Unit : mm)

0.22±0.05

ROHM : VMD3

zTaping dimensions (Unit : mm)

∗

∗

V

F

I

R

1.2±0.1

0.32±0.05

(3)

0.8±0.1

(1) (2)

0.22±0.05

0.4

0.4

0.8±0.05

0.37

dot (year week facto ry)

4.0±0.1

1.40±0.1

RM

V

V

R

I

O

FSM

I

Tj 125

Tstg

−

−

−40 to +125 °C

−

−

0.13±0.05

0～0.1

1.2±0.1

0.5±0.05

0.5±0.05

0～0.1

2.0±0.05

4.0±0.1 φ1.0±0.2

Limits

40

30

30 mA

200 mA

0.37 V I

0.5

0.15Maｘ

0.15Max

0.3

0.2±0.1

φ1.55±0.1

Unit

V
V

°C

µA

0.05

VR=30V

zLand size figure

0.45

VMD3

zStructure

1.75±0.1

3.5±0.05

0

F

=1mA

RB715Z

0.4

0.4

0.5

0.8

0.3±0.1

8.0±0.2

2.8±0.1

2.8±0.05

1.0±0.1

1.15

0.45

1/3

RB715Z

o

CS

Diodes

zElectrical characteristic curves

2/3

100

Ta=125℃

10

Ta=75℃

1

0.1

FORWARD CURRENT:IF(mA)

0.01
0 500 1000 1500

FORW ARD VOLTAGE：VF(mV)

300

290

280

270

260

FORWARD VOLT AGE:VF(mV)

250

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

10000

Mounted on epoxy board

/W)

IM=1mA IF=10mA

℃

1000

TRANSIENT

100

THAERMAL IMPEDANCE:Rth (

10

0.001 0.1 10 1000

Ta=-25℃

Ta=25℃

VF-IF CHARACTERISTICS

AVE:267.4mV

VF DIPERSION MAP

AVE:7.30kV

IFSM DISPERSION MAP

time

1ms

300us

TIME:t(s)

Rth-t CHARACTERIST ICS

Ifsm

Ta=25℃

IF=1mA

n=30pcs

8.3ms

Rth(j-a)

Rth(j-c)

1cyc

1000

100

10

1

0.1

0.01

REVERSE CURRENT:IR( uA)

0.001
0102030

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

REVERSE CURRENT:IR(nA)

0.1

0

20

15

10

PEAK SURGE

5

FORWARD CURRENT:IFSM(A)

0

110100

IFSM-CYCLE CHARACTER ISTICS

0.04
Per chip

0.03

Sin(θ＝180)

0.02

DISSIPAT ION:Pf( W)

FORWARD POWER

0.01

0.00

0.00 0.01 0.02 0.03 0.04 0.05

AVE:0.083nA

IR DISPERSION MAP

Ifsm

NUMBER OF CYCLES

D=1/2

AVERAGE RECT IFIED

FORWARD CURRENT Io(A)

-Pf CHARACTERISTI

I

8.3ms

DC

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

Ta=25℃
VR=10V
n=30pcs

8.3ms

1cyc

10

1

TERMINALS:Ct(pF)

CAPACITANCE BETWEEN

0.1
0102030

REVERSE VOLTAG E:VR(V)

VR-Ct CHARACT ERISTICS

10

9

8

7

6

5

4

3

TERMINALS:Ct(pF)

2

CAPACITANCE BETWEEN

1

0

10

9

8

7

6

5

4

PEAK SURGE

3

2

FORWARD CURRENT:IFSM(A)

1

0

1 10 100

0.003

Per chip

(W)

0.002

R

0.001

REVERSE POWER

DISSIPATION:P

0

0102030

AVE:2.52pF

Ct DISPERSION MAP

TIME:t(ms)

IFSM-t CHARACTERIST ICS

DC

Sin(θ＝180)

REVERSE VOLTAG E:VR(V)

CHARACTERIST ICS

VR-P

R

Ifsm

D=1/2

f=1MHz

Ta=25℃

f=1MHz
VR=0V

n=10pcs

t