查询RB715Z供应商
Diodes
Schottky barrier diode
RB715Z
zApplications
General rectification
zFeatures
1)
Extra small power mold type.
(VMD3)
2) Low V
F
3) High reliability
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
∗ Rating of per diode
zElectrical characteristic (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
zExternal dimensions (Unit : mm)
0.22±0.05
ROHM : VMD3
zTaping dimensions (Unit : mm)
∗
∗
V
F
I
R
1.2±0.1
0.32±0.05
(3)
0.8±0.1
(1) (2)
0.22±0.05
0.4
0.4
0.8±0.05
0.37
dot (year week facto ry)
4.0±0.1
1.40±0.1
RM
V
V
R
I
O
FSM
I
Tj 125
Tstg
−
−
−40 to +125 °C
−
−
0.13±0.05
0～0.1
1.2±0.1
0.5±0.05
0.5±0.05
0～0.1
2.0±0.05
4.0±0.1 φ1.0±0.2
Limits
40
30
30 mA
200 mA
0.37 V I
0.5
0.15Maｘ
0.15Max
0.3
0.2±0.1
φ1.55±0.1
Unit
V
V
°C
µA
0.05
VR=30V
zLand size figure
0.45
VMD3
zStructure
1.75±0.1
3.5±0.05
0
F
=1mA
RB715Z
0.4
0.4
0.5
0.8
0.3±0.1
8.0±0.2
2.8±0.1
2.8±0.05
1.0±0.1
1.15
0.45
1/3
RB715Z
o
CS
Diodes
zElectrical characteristic curves
2/3
100
Ta=125℃
10
Ta=75℃
1
0.1
FORWARD CURRENT:IF(mA)
0.01
0 500 1000 1500
FORW ARD VOLTAGE：VF(mV)
300
290
280
270
260
FORWARD VOLT AGE:VF(mV)
250
20
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
10000
Mounted on epoxy board
/W)
IM=1mA IF=10mA
℃
1000
TRANSIENT
100
THAERMAL IMPEDANCE:Rth (
10
0.001 0.1 10 1000
Ta=-25℃
Ta=25℃
VF-IF CHARACTERISTICS
AVE:267.4mV
VF DIPERSION MAP
AVE:7.30kV
IFSM DISPERSION MAP
time
1ms
300us
TIME:t(s)
Rth-t CHARACTERIST ICS
Ifsm
Ta=25℃
IF=1mA
n=30pcs
8.3ms
Rth(j-a)
Rth(j-c)
1cyc
1000
100
10
1
0.1
0.01
REVERSE CURRENT:IR( uA)
0.001
0102030
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
REVERSE CURRENT:IR(nA)
0.1
0
20
15
10
PEAK SURGE
5
FORWARD CURRENT:IFSM(A)
0
110100
IFSM-CYCLE CHARACTER ISTICS
0.04
Per chip
0.03
Sin(θ＝180)
0.02
DISSIPAT ION:Pf( W)
FORWARD POWER
0.01
0.00
0.00 0.01 0.02 0.03 0.04 0.05
AVE:0.083nA
IR DISPERSION MAP
Ifsm
NUMBER OF CYCLES
D=1/2
AVERAGE RECT IFIED
FORWARD CURRENT Io(A)
-Pf CHARACTERISTI
I
8.3ms
DC
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
VR=10V
n=30pcs
8.3ms
1cyc
10
1
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
0.1
0102030
REVERSE VOLTAG E:VR(V)
VR-Ct CHARACT ERISTICS
10
9
8
7
6
5
4
3
TERMINALS:Ct(pF)
2
CAPACITANCE BETWEEN
1
0
10
9
8
7
6
5
4
PEAK SURGE
3
2
FORWARD CURRENT:IFSM(A)
1
0
1 10 100
0.003
Per chip
(W)
0.002
R
0.001
REVERSE POWER
DISSIPATION:P
0
0102030
AVE:2.52pF
Ct DISPERSION MAP
TIME:t(ms)
IFSM-t CHARACTERIST ICS
DC
Sin(θ＝180)
REVERSE VOLTAG E:VR(V)
CHARACTERIST ICS
VR-P
R
Ifsm
D=1/2
f=1MHz
Ta=25℃
f=1MHz
VR=0V
n=10pcs
t
Diodes
AVERAGE RECTIFIDE
FORWARD CURRENT:Io(A)
0.1
Per chip
0.08
0.06
DC
D=1/2
0.04
0.02
Sin(θ＝180)
0
0 25 50 75 100 125
AMBIENT TEMPERATURE: Ta(℃)
0A
0V
t
Derating Curve (Io-Ta)
T Tj=125℃
D=t/T
VR=20V
RB715Z
Io
VR
0.1
Per chip
0.08
0.06
DC
D=1/2
0.04
AVERAGE RECTIFIED
0.02
FORWARD CURRENT:Io(A)
Sin(θ＝180)
0
0 25 50 75 100 125
0A
0V
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
Io
T
D=t/T
=
Tj=125℃
VR
t
3/3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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