ROHM RB715F, RB715W Datasheet
Diodes
Schottky barrier diode
RB715W / RB715F
External dimensions
Applications
!
General purpose detection
High speed switching
!!!!
RB715W
RB715W / RB715F
(Units : mm)
RB715F
Features
!
1) Small surface mounting type.
(EMD3, UMD3)
2) Low V
F
and low I
R
3) High reliability
Construction
!
Silicon epitaxial planar
Circuit
!!!!
Absolute maximum ratings
!!!!
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
∗ 60 Hz for 1
∗
(Ta=25°C)
Symbol
V
RM
R
V
I
O
I
FSM
Tj
Tstg
1.6±0.2
1.0±0.1
+0.1
0.2
−0.05
+0.1
0.5
0.5
0.2
−0.05
(2)(1)
3 D
0.1
0.2
±
±
0.8
(3)
1.6
+0.1
0.3
−0.05
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 416
Limits Unit
40 V
40 V
30 mA
200 mA
125
0.7±0.1
0.15±0.05
°C
°C−40~+125
0.55±0.1
0~0.1
0.1Min.
2.0±0.2
1.3±0.1
0.650.65
(1) (2)
3 D
0.1
±
(3)
(All pins have the same dimensions)
1.25
0.3±0.1
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
0.3 0.6
0.1
±
2.1
0.15±0.05
0.9±0.1
0~0.1
0.1Min.
Electrical characteristics
!!!!
(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
Reverse current
Capacitance between terminals
Note) ESD sensitive product handling required.
F
V
I
R
C
T
−−0.37 V IF=1mA
−−1 µAVR=10V
− 2.0 − pF VR=1V, f=1MHz
Diodes
Electrical characteristic curves
!!!!
1
100m
(A)
F
Ta=125°C
10m
1m
100µ
FORWARD CURRENT : I
10µ
1µ
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=75°C
Ta=25°C
Ta=−25°C
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
10
5
(ns)
rr
2
1
0.5
Typ.
pulse measurement
(Ta=25°C)
(A)
R
REVERSE CURRENT : I
100m
10m
1m
100n
10n
1n
0 5 101520253035
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
RB715W / RB715F
100
(pF)
T
10
1
CAPACITANCE BETWEEN TERMINALS : C
0.1
0 5 10 15 20 25
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
0.2
REVERSE RECOVERY TIME : t
0.1
4 8 12 16 20 24 28
0
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
characteristics
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