
Datasheet
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Schottky Barrier Diode
RB715F
lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm)
Low current rectification
1) Small mold type. (UMD3)
2)
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta= 25°C)
Reverse voltage (repetitive peak)
Average rectified forward current Io mA
Junction temperature Tj °C
Storage temperature Tstg °C
(*1) Rating of per diode
Symbol Min. Typ. Max. Unit
Forward voltage
Capacitance between terminals Ct - 2.0 - pF
lElectrical characteristics (Ta = 25°C)
Forward current surge peak (60Hz・1cyc) (*1)
Each lead has same dimension

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Data Sheet
lElectrical characteristic curves
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.001
0.01
0.1
1
10
100
1000
0 10 20 30
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = -25°C
0.1
1
10
0 5 10 15 20 25 30 35
AVE : 267.4mV
Ta=25°C
IF=1mA
n=30pcs
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE CURRENT : I
R
(mA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : V
F
(mV)
VF DISPERSION MAP

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Data Sheet
lElectrical characteristic curves
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Ta=25°C
VR=10V
n=30pcs
AVE : 0.083mA
AVE : 1.97pF
Ta=25°C
f=1MHz
VR=1V
n=10pcs
REVERSE CURRENT : I
R
(mA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
DISPERSION MAP
8.3ms
I
FSM
1cyc.
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
1cyc.
8.3ms
I
FSM
8.3ms

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Data Sheet
lElectrical characteristic curves
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
0
0.001
0.002
0.003
0 10 20 30
1
10
100
1000
0.001 0.1 10 1000
0
1
2
3
4
5
6
7
8
9
10
1 10 100
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
FORWARD POWER
DISPERSION : P
F
(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
I
FSM
time
1ms
IM=1mA IF=10mA
300ms
Mounted on glass epoxy board
REVERSE POWER
DISPERSION : P
R
(W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS

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Data Sheet
lElectrical characteristic curves
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
0.00
0.02
0.04
0.06
0.08
0.10
0 25 50 75 100 125
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
T
Tj=125°C
t
V
R
Io
VR=20V
0A
0V
T
Tj=125°C

Notes
1)
The information contained herein is subject to change without notice.
2)
Before you use our Products, please contact our sales representative and verify the latest specifications :
3)
Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4)
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5)
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6)
The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7)
The Products specified in this document are not designed to be radiation tolerant.
8)
For use of our Products in applications requiring a high degree of reliability (as exemplified
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equipment, medical systems, servers, solar cells, and power transmission systems.
9)
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10)
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the recommended usage conditions and specifications contained herein.
11)
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12)
Please use the Products in accordance with any applicable environmental laws and regulations,
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